Gallium arsenic

Once germanium is recovered and formed into blocks, it is further refined by the manufacturer of semiconductors. It is melted, and the small amounts of impurities such as arsenic, gallium, or antimony, are added. They act as either electron donors or acceptors that are infused (doped) into the mix. Then small amounts of the molten material are removed and used to grow crystals of germanium that are formed into semiconducting transistors on a germanium chip. The device can now carry variable amounts of electricity because it can act as both an insulator and a conductor of electrons, which is the basis of modern computers. 

The aluminium compound, (Et2AlAsBu2)2, obtained from triethylaluminium and dibutylarsine by loss of ethane contains a four-membered ring (As—A12.57 A) and, as shown in Table 3, four-membered, often planar and centrosymmetric rings dominate the related arsenic-gallium species 62. The geometry at each of the ring atoms is distorted tetrahedral. 

Some arsenic is used in the electronics industry. It is added to germanium and silicon to make transistors. A compound of arsenic, gallium arsenide (GaAs), is also used to make light-emitting diodes (LEDs). LEDs produce the lighted numbers in hand-held calculators, clocks, watches, and a number of other electronic devices. 

Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. 

In an alternative industrial process, resorcinol [108-46-3] is autoclaved with ammonia for 2—6 h at 200—230°C under a pressurized nitrogen atmosphere, 2.2—3.5 MPa (22—35 atm). Diammonium phosphate, ammonium molybdate, ammonium sulfite, or arsenic pentoxide maybe used as a catalyst to give yields of 60—94% with 85—90% selectivity for 3-aminophenol (67,68). A vapor-phase system operating at 320°C using a siUcon dioxide catalyst impregnated with gallium sesquioxide gives a 26—31% conversion of resorcinol with a 96—99% selectivity for 3-aminophenol (69). 

Arsine is used for the preparation of gallium arsenide [1303-00-0] GaAs, (17), and there are numerous patents covering this subject (see Arsenic and ARSENIC alloys). The conversion of a monomeric arsinogaHane to gallium arsenide has also been described (18). GaUium arsenide has important appHcations in the field of optoelectronic and microwave devices (see Lasers Microwave technology Photodetectors). 

In the U ansport of gallium arsenide by chlorine, there is a competition between the monochloride and the nichloride for the uansport of gallium after arsenic has evaporated as the element or as a chloride. The probability... 

S. Muthuvenkatranian, S. Gorantla, R. Venkat, D. L. Dorsey. Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide. J App Phys S5 5845, 1998. 

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... 

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