Gallium indium phosphide

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. 

Kocha SS, Turner JA (1994) Study of the Schottky barriers and determination of the energetics of the band edges at the n- and p-type gallium indium phosphide electrode electrolyte interface. J Electroanal Chem 367 27-30... 

Studies of bandedge engineering of gallium indium phosphide (p-GaInP2) have shown that the bandedges can be controlled within a small range of pHs. 

Gallium indium phosphide (p-GaInP2) is a semiconducting material that meets the bandgap... 

Polyacetylene/n-zinc sulfide Gallium indium phosphide... 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

Photovoltaic (PV) solar cells, which convert incident solar radiation directly into electrical energy, today represent the most common power source for Earth-orbiting spacecraft, such as the International Space Station, where a photovoltaic engineering testbed (PET) is actually assembled on the express pallet. The solid-state photovoltaics, based on gallium arsenide, indium phosphide, or silicon, prove capable, even if to different extents and with... 

Metal-Phosphorus Bono Lengths, Torsion Angles between the Metal and Phosphorus Coordination Planes, Sums of Angles at Phosphorus, and 3IP NMR Chemical Shifts for Three-Coordinate Aluminum, Gallium, and Indium Phosphides... 

Chan K., Ito H., Inaba H., Optical remote monitoring of methane gas using low-loss optical fiber link and indium gallium arsenide phosphide light-emitting diode in 1.33-mm region, Appl. Phys. Lett. 1983 43 634. 

The gallium aluminum arsenide (GaAlAs) and indium phosphide (InP) laser diodes are among the most used NIR excitation sources (Figure 7.4). These diodes are... 

Various inorganic semiconductors (p-type and/or n-type nonoxide semiconducting materials) sucb as amorphous or crystalline silicon (a-Si or c-Si), gallium arsenide (GaAs), cadmium telluride (CdTe), gallium phosphide (GaP), indium phosphide (InP), copper... 

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