Devices optoelectronic

For a historical review see Lee C H 1984 Picosecond Optoelectronic Devices (New York Academic)... 

Given tire general description of tire electromagnetic field, let us explore the sources available for optoelectronics. The one primary light source for optoelectronic device and system architectures is tire laser. The laser [10] is tire source of choice simply because if we want to control light fields tliey need to be well defined at tire start and tire laser is tire most... 

Chuang S L 1995 The Physics of Optoelectronic Devices (Wiley series in pure and applied opties)... 

Although the LED is one of the most basic optoelectronic devices, there exists a variety of complex and interacting material and stmctural considerations in designing these devices. These include the choice of materials for emission wavelength of the LED as well as the geometry and fabrication methods of the device. The principal stmctural properties of commercially available LEDs are summarized in Table 1. 

Metal demand has an important influence on price. Both lead and gallium occur in the earth at about 0.0015 wt %. The demand for gallium (1990 U.S. consumption was 10,000 kg) is limited to optoelectronic devices and high performance microelectronics. There appears to be no need to expand supply, which would reduce price. On the other hand, reported 1990 consumption of lead in the United States was 1.25 x 10 t. Lead (qv) production is carried out on a large scale by relatively simple and efficient processes. 

Electronic and Optoelectronic Applications of TeUurides. Most metal teUurides are semiconductors with a large range of energy gaps and can be used in a variety of electrical and optoelectronic devices. AUoys of the form HgCdTe and PbSnTe have been used as infrared detectors and CdTe has been employed as a gamma ray detector and is also a promising candidate material for a thin-fUm solar ceU. 

In the quantum level stmctures illustrated in Figure lb, electrons in each band fill up the energy levels, up to the available chemical potential. From Figure lb two critical optoelectronic devices can be explained. 

Microcharacterization of semiconductor devices (e.g., degradation of optoelectronic devices)... 

Cathodoluminescence microscopy and spectroscopy techniques are powerful tools for analyzing the spatial uniformity of stresses in mismatched heterostructures, such as GaAs/Si and GaAs/InP. The stresses in such systems are due to the difference in thermal expansion coefficients between the epitaxial layer and the substrate. The presence of stress in the epitaxial layer leads to the modification of the band structure, and thus affects its electronic properties it also can cause the migration of dislocations, which may lead to the degradation of optoelectronic devices based on such mismatched heterostructures. This application employs low-temperature (preferably liquid-helium) CL microscopy and spectroscopy in conjunction with the known behavior of the optical transitions in the presence of stress to analyze the spatial uniformity of stress in GaAs epitaxial layers. This analysis can reveal,... 

The importance of these pseudo-crystals is that their periodicities are similar to those of visible light and they can thus be used like semiconductors in acting on light beams in optoelectronic devices. 

I.S. Res, Properties of materials that are used in optoelectronic devices, Kirensky Institute of Physiscs, Moscow, 1975, p. 10. 

Experimental high-power and high-temperature material for electronic and optoelectronic devices especially in the UV region of the spectrum. 

The many possible combinations of II-V and II-VI compounds allow the tailoring of electronic and opto-electronic properties to suit specific applications. Of particular importance is the control of the stoichiometry of the element involved. This is achieved by the proper handling of the MOCVD reactions. Being able to tailor the bandgap imparts great flexibility in the design of transistors and optoelectronic devices. 

Optoelectronic devices are found in numerous consumer products such as television, compact-disk players, laser communications, laser printers, radar detectors, cellular telephones, direct-broad-cast television, and many others. Many of these applications were developed in Japan and that country is still prominent in the field. 

Some of the most important optoelectronic devices are described below. 

Optoelectronic Devices, Catalog 86-1 Issue III, Lumex, Palatine, IL 60067(1986)... 

The formation of nanostructures such as nanodot arrays has drawn a great attention due to the feasible applications in a variety of functional structures and nanodevices containing optoelectronic device, information storage, and sensing media [1-3]. The various methods such as self-assembled nanodots from solution onto substrate, strain-induced growth, and template-based methods have been proposed for the fabrication of nanodot arrays on a large area, [4-6]. However, most of these works can be applied to the small scale systems due to the limited material systems. 

It is highly likely that by the second decade of the new millennium silicon-based computing will have reached fundamental technological or physical limits. Computers will therefore be based on substrates that exhibit superior performance characteristics. One possibility is the photon. Optoelectronic devices, which use substrates such as gallium arsenide, permit the interconversion of electrons and photons. Hybrid computers, which may already be available commercially by 2010, would use silicon for computation and photons for data transfer. The coherent modulation of very-high-frequency light beams enables many high-capacity... 

P. Mazzoldi, G. Righini, in F. Agullo-Lopez (ed.) Glasses for Optoelectronic Devices, in Insulating Materials for Optoelectronics, World Scientific, Singapore, 1995, 367. 

J. Kanicki, Ed., Amorphous and Microcrystalline Semiconductor Devices— Optoelectronic Devices." Artech House, Norwood, MA, 1991. 

There are also several proposals to use anodic aluminum oxides in producing optoelectronic devices. Porous oxides may find use as antireflecting coatings for optical pathways. Anodic alumina films doped by Eu and Tb are promising for application in electroluminescent cells for TEELs.28... 

A series of nonlinear optical (NLO) donor-aceptor chromophores containing a fused dithienothiophene (DTT) as electron relay have been synthesized and investigated. The compounds Dj-OTT-Aj 75, D -DTT-A2 76, and D -DTT-A3 77 have shown high thermal stability, which is significant for their use as the active components in optoelectronic devices <2004CEJ3805, 1999JMC2227>. 

The aim of this tutorial is to present briefly some of the optoelectronic elements, which can be used for designing of the interfaces for FOCS. More details on optoelectronic devices can be found in the references6 8. Special attention is placed on the appropriate spectral matching of these elements in order to obtain a sensor exhibiting optimal measuring properties such as dynamic range, sensitivity etc. 

---