Phosphides crystal growth

Volume 31 Indium Phosphide Crystal Growth and Characterization... 

Low-temperature solvents are not readily available for many refractory compounds and semiconductors of interest. Molten salt electrolysis is utilized in many instances, as for the synthesis and deposition of elemental materials such as Al, Si, and also a wide variety of binary and ternary compounds such as borides, carbides, silicides, phosphides, arsenides, and sulfides, and the semiconductors SiC, GaAs, and GaP and InP [16], A few available reports regarding the metal chalcogenides examined in this chapter will be addressed in the respective sections. Let us note here that halide fluxes provide a good reaction medium for the crystal growth of refractory compounds. A wide spectrum of alkali and alkaline earth halides provides... 

T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation K. Tada, M. Tatsumi, M. Morioka, T. Araki, and T. Kawase, InP Substrates Production and Quality Control... 

A method that has so far only scarcely been used for the synthesis of the RxTyPbz plumbides is the lead flux. The latter has successfully been used for the growth of phosphide crystals (Kanatzidis et al., 2005). This technique has certainly a great potential, especially for lead-rich R TyPbz compounds. 

Chemical vapour deposition (CVD) is the principal technique which is used to obtain thin metal or metal phosphide films required for electrical or other uses [4,5]. One arrangement is to feed an appropriate mixture of reacting components into a tube in such a way as to allow reaction and deposition to take place. In Figure 12.44, the flow rates and temperatures ti,t2,ti of the different regions (1),(2),(3) are adjusted to give the required crystal growth of GaAs Pj, and deposition on the substrate. 

T Niemyski, S M-Appenheimer, J Majewski. High-pressure crystallization of boron phosphide from hquid phosphorus. In HS Peiser, ed. Crystal Growth. Oxford Pergamon, 1967, p 585. 

XL Chu, JM Jackson, RK Smeltzer. The crystal growth of boron monophosphide from metal phosphide solution. J Electrochem Soc 120 802, 1973. 

Y Kumashiro, T Yao, S Gonda. Crystal growth of boron phosphide by high pressure flux method. J Cryst Growth 70 515, 1984. 

S Motojima, S Yokoe, K Sugiyama. Pillar crystal growth of boron phosphide from the vapor in the presence of nickel impurity. J Cryst Growth 49 1, 1980. 

Odile JP, Soled S, Castro CA, Wold A (1978) Crystal growth and characterization of the transition-metal phosphides copper diphosphide, nickel diphosphide, and rhodium triphosphide. Inorg Chem 17 283-286... 

In addition, the use of CBD CdS in cells for spatial applications based on indium phosphide single crystals has been reported [247] in a cell with an efficiency of 17.8%. The structure was InP/CBD CdS/In203 for which the possibility of epitaxial growth of CdS CBD on InP is a favorable factor. 

Small quantities of phosphides can act as crystallisation nuclei for components of alloys. High-strength materials for engine pistons are obtained by adding 0.01-0.03% P to certain Al/Si/Cu alloys. The AlP, which is formed, provides crystallisation nuclei for the growth of Si crystals of suitable size, which increase wear resistance. 

Y Kumashiro, M Matsumoto, H Yoshizawa. Heteroepitaxial growth of boron phosphide single crystal on sapphire single crystal. JJAP Ser 10 160, 1994. 

Y Kumashiro, Y Okada, H Okumura. Isotope effects on boron phosphide single-crystal wafers. J Cryst Growth 132 611, 1993. 

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