Dielectric passivant

The present work is a report of the properties of polyimide which define functionality as an interlevel dielectric/passivant. Thus, the planarizing and patterning characteristics and electrical characteristics of current vs voltage, dissipation, breakdown field strength, dielectric constant, charge and crossover isolation are discussed in addition to the reliability-related passivation properties. 

Insulation Integrity. Insulation integrity is a function of an interlayer dielectric/passivant defined by specific electrical, mechanical and passivation properties. The D.C. electrical property of interest is the I-V characteristic which is used to deduce conductivity and breakdown field strength. The corresponding A.C. electrical property is dissipation factor. The pertinent mechanical and passivation properties are, respectively, pinhole density and performance rating as a diffusion barrier to Na" " and H2O. 

Avatrel Dielectric Polymers (low-k dielectric applications such as interlayer dielectrics, passivation layers, die attach adhesives, chip encapsulants (both molding and adhesive) and underfill materials). 

In electronics, polyimides are now extensively used in the form of self-standing films for flexible circuitry, deposited films for interlayer dielectrics, passivation and buffer coatings, moulding thermoplastic powders for PCBs, and adhesive pastes or tapes. The basic polyimide chemistry has been adapted to fulfill the specific requirements of these applications. A series of books provides complete information not only on the chemistry of polyimides but also on their utilization in electronics [4,23,24]. The following figures summarize the chemical formulae of the most important categories of polyimide precursors or precyclized polymers that are commonly used in electronics. 

Highly protective layers can also fonn in gaseous environments at ambient temperatures by a redox reaction similar to that in an aqueous electrolyte, i.e. by oxygen reduction combined with metal oxidation. The thickness of spontaneously fonned oxide films is typically in the range of 1-3 nm, i.e., of similar thickness to electrochemical passive films. Substantially thicker anodic films can be fonned on so-called valve metals (Ti, Ta, Zr,. ..), which allow the application of anodizing potentials (high electric fields) without dielectric breakdown. 

It should be mentioned that as well as for metals the passivation of semiconductors (particularly on Si, GaAs, InP) is also a subject of intense investigation. However, the goal is mostly not the suppression of corrosion but either the fonnation of a dielectric layer that can be exploited for devices (MIS stmctures) or the minimization of interface states (dangling bonds) on the semiconductor surface [63, 64]. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Step 11. If no additional metallisa tion layers are required, the substrate is covered with a passivation layer. If additional levels of metallisa tion are to be added to the stmcture, a blanket layer of a intermetal dielectric (IMD) is deposited. The resist is deposited, patterned (mask 5), and vias down to the Al in the first metal layer are etched. Steps 10 and 11 are repeated to form the second metal layer. 

Polyimides, both photodefinable and nonphotodefinable, are coming iato iacreased use. AppHcatioas iaclude planarizing iatedayer dielectrics oa iategrated circuits and for interconnects, passivation layers, thermal and mechanical stress buffers ia packagiag, alpha particle barriers oa memory devices, and ion implantation (qv) and dry etching masks. 

Since the end of the 1970s, the polyimides have been introduced for the production of electronic components mainly for the passivation. But more and more they are interesting for the integrated circuits and multichip modulus fabrications. Processability and dielectric and thermomechanical properties are the most attractive features of these materials for the electronic31 and electro-optical applications.32... 

Another example of a cold-wall reactor is shown in Fig. 5.9. It uses a hot plate and a conveyor belt for continuous operation at atmospheric pressure. Preheating and cooling zones reduce the possibility of thermal shock. The system is used extensively for high-volume production of silicon-dioxide coatings for semiconductor passivation and interlayer dielectrics. 

Passivation layers, multilayer resist stacks, diffusion barriers, interlevel dielectrics, side-wall spacers, trench masks, oxidation masks, etc., in semiconductor devices. 

Passivation layers, surface dielectric, and doping barriers in semiconductor devices. 

But metallic coatings have high absorption losses. But one can remedy them with dielectric coatings, which are necessary also to passivate the metal, avoiding oxidation. Aluminum is the best metal for the ultraviolet in addition it adheres on most substrates it needs passivation. Silver is easy to deposit it has the highest reflectance in the visible and the infrared since it tarnish rapidly, passivation is mandatory. Gold is the best material beyond 700 nm, and it is considered that it does not tarnish, which is not true actually because its surface is not that stable on the long term. 

The origin of the observed correlation was not established, and the relation was not interpreted as causal. It could be argued that a sustained elevated potential due to as-yet unknown microbial processes altered the passive film characteristics, as is known to occur for metals polarized at anodic potentials. If these conditions thickened the oxide film or decreased the dielectric constant to the point where passive film capacitance was on the order of double-layer capacitance (Cji), the series equivalent oxide would have begun to reflect the contribution from the oxide. In this scenario, decreased C would have appeared as a consequence of sustained elevated potential. 

---