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Dielectric surface

The external reflection of infrared radiation can be used to characterize the thickness and orientation of adsorbates on metal surfaces. Buontempo and Rice [153-155] have recently extended this technique to molecules at dielectric surfaces, including Langmuir monolayers at the air-water interface. Analysis of the dichroic ratio, the ratio of reflectivity parallel to the plane of incidence (p-polarization) to that perpendicular to it (.r-polarization) allows evaluation of the molecular orientation in terms of a tilt angle and rotation around the backbone [153]. An example of the p-polarized reflection spectrum for stearyl alcohol is shown in Fig. IV-13. Unfortunately, quantitative analysis of the experimental measurements of the antisymmetric CH2 stretch for heneicosanol [153,155] stearly alcohol [154] and tetracosanoic [156] monolayers is made difflcult by the scatter in the IR peak heights. [Pg.127]

Catalysts for dielectric surfaces are more complex than the simple salts used on metals. The original catalysts were separate solutions of acidic staimous chloride [7772-99-8J, used to wet the surface and deposit an adherent reducing agent, and acidic palladium chloride [7647-10-17, which was reduced to metallic palladium by the tin. This two-step catalyst system is now essentially obsolete. One-step catalysts consist of a stabilized, pre-reacted solution of the palladium and staimous chlorides. The one-step catalyst is more stable, more active, and more economical than the two-step catalyst (21,23). A separate acceleration or activation solution removes loose palladium and excess tin before the catalyzed part is placed in the electroless bath, prolonging bath life and stability. [Pg.107]

The formation of SiGe nanocrystals on SiOaat ITorr, 10s was clearly observed by atomic force microscopy (inset of Fig. 2(a)). Fig. 2 shows the mean diameter and the surface density of the nanocrystals formed as a function of deposition time and deposition pressure. The mean diameter of the nanocrystals initially increases then decreases with deposition time whereas the nanocrystal density follows the opposite trend. It is evident that different mechanisms dominate in shorter and longer deposition times. According to Kim et al, the formation of SiGe on a dielectric surface preferentially occurs on nucleated Si through impingement [4]. [Pg.72]

The pattern of interaction between metastable atoms of rare gases and a semiconductor or dielectric surface is not yet clear, the literature data in this field are incomplete and uncoordinated, a fact that is primarily associated with the lack of convenient techniques suitable for studying these systems. [Pg.323]

Figures 13(a) and 13(b) illustrate the intensity distributions for two environment/substrate combinations, namely air/glass and water/glass. It can be concluded that the dipole located at a dielectric surface preferably radiates into the higher refractive index substrate at angles close to the critical angle. The intensity radiated into the environment is, on the other hand, relatively small. Yet it is this fraction of the fluorescence intensity that forms the basis of the sensor signal in conventional systems such as the optical biosensor... Figures 13(a) and 13(b) illustrate the intensity distributions for two environment/substrate combinations, namely air/glass and water/glass. It can be concluded that the dipole located at a dielectric surface preferably radiates into the higher refractive index substrate at angles close to the critical angle. The intensity radiated into the environment is, on the other hand, relatively small. Yet it is this fraction of the fluorescence intensity that forms the basis of the sensor signal in conventional systems such as the optical biosensor...
As an excitation system, TIRF does not specifically refer to the pattern, intensity, or lifetime of the fluorescence emitted from the near-surface molecules which become excited. However, these emission characteristics are somewhat different from those far from a surface, and some of these differences may become experimentally useful. In Section 7.3, the emission pattern of a fluorophore near a dielectric surface (particularly the interface of water with either bare glass or metal-coated glass) is discussed. [Pg.290]

Although the probability of absorption of TIR evanescent energy by a fluorophore of given orientation decreases exponentially with distance z from a dielectric surface, the intensity of the fluorescence actually viewed by a detector varies with z in a much more complicated fashion. Both the angular pattern of the emitted radiation and the fluorescent lifetime are altered as a function of z by the proximity of the surface. [Pg.298]

W. Lukosz and R. E. Kunz, Fluorescence lifetime of magnetic and electric dipoles near a dielectric surface, Opt. Commun. 20, 195-199 (1977). [Pg.337]

T. P. Burghardt, Polarized fluorescent emission from probes near dielectric surfaces, Chem. Phys. Lipids 50, 271-287 (1989). [Pg.341]

Three-methods have been pursued to organize monolayers from different organic compounds to form molecular monolayer FETs (1) thermal evaporation of approximately monolayer thickness on the dielectric surface of FETs, (2) Langmuir-Blodgett assembly on the water surface and transfer to device surfaces, and (3) self-assembly of functionalized organic compounds on the surface of the gate, or gate dielectric layers of FETs. [Pg.219]

Fig. 10 (a) Transfer characteristics in the linear and saturation regimes for a-substituted quinquethiophene liquid crystalline monolayers assembled on the Si02 gate dielectric surface of a 40 pm channel length FET. Inset) Field-effect mobility as a function of FET channel length, (b) Output characteristics of the FET. The transfer and output characteristics were scanned in both positive and negative directions in applied voltage... [Pg.229]

The hquid crystalline, a-substituted quinquethiophene was used by the same group to translate this approach of self-assembly from the Si02 gate dielectric surface of FETs to assembly on organic dielectric surfaces, a first step toward fabricating flexible monolayer electronics [72]. Figure 11a provides a schematic of... [Pg.229]

Equation (6) defines most of the intrinsic characteristics of the DEA process. For further information on the mechanism of transient anion formation and its effects in isolated electron-atom and electron-molecule systems, the reader is referred to the review articles by Schulz [17] and others [7,19,20]. Information on resonance scattering from single layer and submonolayer of molecules physisorbed or chemisorbed on conductive surfaces can be found in the review by Palmer et al. [21-23]. The present article provides information essentially on resonances in atoms and molecules condensed onto a dielectric surface or forming a dielectric thin film. [Pg.210]

With the laser pulse energy W = 10 5 J, the laser spot diameter d = 10X on the dielectric surface, and the light frequency v = 5x 1014 s 1, the electron velocity variation is Au = 2x 108exp(-z/zo) centimeters per second. This means that an electron beam with an energy E - 100 eV (v = 5.9 x 108 cm/s) reflects at a substantial angle of

evanescent wave produced by a femtosecond laser pulse. [Pg.190]

The reflection of the electron should be expected in the case r Tu-when the maximum potential energy of the electron in the evanescent wave is higher than its kinetic energy associated with its normal motion toward the dielectric surface (i.e., Umax > E ). The maximum normal velocity component of the reflected electrons is given by... [Pg.190]

Given a cavity segmentation by m segments i, of sizes s, and centered at positions fj, the dielectric surface polarization charge densities, at, and the corresponding apparent surface charges, qt = Sjffj, can be calculated from the exact dielectric boundary... [Pg.19]

These results suggest, that also the top pzt surface has different properties compared to the bulk values. In fact, various theoretical models already suggested the existence of a pure dielectric surface layer [38] to be present on pzt thin films. Here, for the first time, we have given experimental evidence that this is true for both the inner and outer interfaces in pzt on the nanometer scale... [Pg.248]

Nonpolar van der Waals forces and repulsion forces are always present and are, therefore, always among the cooperating forces in every case of adsorption. There are, however, few cases where these two general forces are the only ones that operate. The adsorption of noble gases on nonpolar dielectric surfaces will be governed by these two forces only. In practically all other cases one or more of the other forces of Sec. V will cooperate. We shall, in this section, discuss a few selected cases of such cooperation. [Pg.64]

The same dependence between concentration of M nanoparticles (Ns) on a surface of a dielectric substrate and their catalytic activity has been also found out in the investigation of an amorphous films of M nanoparticles [117], prepared by laser electrodispersion technique and deposited on Si02 dielectric surface layer of thermally oxidized Si (see Chapter 15). It has been shown that in various reactions of chlorinated hydrocarbons catalyzed by so prepared nanostructured Cu film with growth Ns the value of Y increases firstl, reaches a maximum at Ns 4 x 1012 particles/cm2, and then quickly falls. [Pg.570]


See other pages where Dielectric surface is mentioned: [Pg.1880]    [Pg.203]    [Pg.127]    [Pg.487]    [Pg.73]    [Pg.74]    [Pg.246]    [Pg.68]    [Pg.306]    [Pg.213]    [Pg.224]    [Pg.225]    [Pg.226]    [Pg.227]    [Pg.227]    [Pg.228]    [Pg.230]    [Pg.231]    [Pg.190]    [Pg.1322]    [Pg.38]    [Pg.203]    [Pg.30]    [Pg.286]    [Pg.940]    [Pg.942]    [Pg.420]    [Pg.33]   
See also in sourсe #XX -- [ Pg.468 ]




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Dielectric barrier discharge surface

Dielectric constant surface

Dielectric metal surface plasmons

Dielectric surface layer

Dielectric surface, OTFT

Gate Dielectrics and Surface Passivation Layers for Organic Field Effect Transistors

Local dielectric constant at the pzt surface

Localized surface plasmon resonance dielectric medium

Perturbed Surface Plasmons on Metal-Dielectric Waveguides

Potential energy surface dielectric constant

Sharp dielectric surfaces

Surface Plasmons on Metal-Dielectric Waveguides

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Surface states dielectric function

Surface value, dielectric constant

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