Solar fabrication

The sensible heat gain is determined by taking into account all the heat gains in a space, such as solar, fabric, infiltration, machines, processes, occupancy, lighting, etc. 

More recently, Oerlikon Solar started the development of large-area R D equipment (1.4m2) for the deposition of ZnO by the LP-CVD process. The results obtained so far are promising Oerlikon Solar fabricated 1.4 m2 a-Si H modules with 112.4 W of initial power (see Fig. 6.55) [78]. These results are already above the results obtained on 1.4 m2 a-Si H modules that use commercial Sn02 from the AFG company as front TCO. Furthermore, Oerlikon Solar developed also an LP-CVD ZnO/white back reflector contact concept, which showed a high light-trapping potential [79]. 

Weathering. Articles fabricated from FEP are unaffected by weather, and thek resistance to extreme heat, cold, and uv kradiation suits them for apphcations in radar and other electronic components. For example, after 15 years of solar exposure in Florida, the tensile strength (73) and light transmission (96%) of a 25-p.m thick film was unchanged and the film remained crystal clear. Elongation increased slightly for the first 5 to 7 years of outdoor exposure, probably as a result of stress relaxation. Beyond 10 years, a small decrease was observed. 

Designing tandem cells is complex. For example, each cell must transmit efficiently the insufficiently energetic photons so that the contacts on the backs of the upper cells are transparent to these photons and therefore caimot be made of the usual bulk metal layers. Unless the cells in a stack can be fabricated monolithically, ie, together on the same substrate, different external load circuits must be provided for each cell. The thicknesses and band gaps of individual cells in the stack must be adjusted so that the photocurrents in all cells are equal. Such an optimal adjustment is especially difficult because the power in different parts of the solar spectmm varies under ambient conditions. Despite these difficulties, there is potential for improvement in cell conversion efficiency from tandem cells. 

Copper Sulfide—Cadmium Sulfide. This thin-film solar cell was used in early aerospace experiments dating back to 1955. The Cu S band gap is ca 1.2 eV. Various methods of fabricating thin-film solar cells from Cu S/CdS materials exist. The most common method is based on a simple process of serially overcoating a metal substrate, eg, copper (16). The substrate first is coated with zinc which serves as an ohmic contact between the copper and a 30-p.m thick, vapor-deposited layer of polycrystaUine CdS. A layer is then formed on the CdS base by dipping the unit into hot cuprous chloride, followed by heat-treating it in air. A heterojunction then exists between the CdS and Cu S layers. 

Small-area thin-film CdTe solar cells have been fabricated with sunlight-to-electricity conversion efficiencies near 16%, comparable to crystalline siUcon solar cells in large-scale manufacturing. Large-area monolithic integrated CdTe modules have been fabricated with efficiencies of ca 10%, comparable to crystalline siUcon modules commercially available. 

Square feet of solar collector fabricated in 1989/square feet of solar collector fabricated in 1988. 

The aim of this chapter is to give a state-of-the-art report on the plastic solar cells based on conjugated polymers. Results from other organic solar cells like pristine fullerene cells [7, 8], dye-sensitized liquid electrolyte [9], or solid state polymer electrolyte cells [10], pure dye cells [11, 12], or small molecule cells [13], mostly based on heterojunctions between phthaocyanines and perylenes [14], will not be discussed. Extensive literature exists on the fabrication of solar cells based on small molecular dyes with donor-acceptor systems (see for example [2, 3] and references therein). 

A smaller class of type II alloys of II-VI binaries also exists, including the (CdS) ,(ZnSe)i (CdS) ,(ZnTe)i (CdSe) ,(ZnSe)i (CdS) ,(CdTe)i-. (CdSe)x(CdTe)i i , and (CdS) c(ZnS)i i systems, which transform at some critical composition from the W to the ZB structure. Importantly, the transition temperatures are usually well below those required to attain a thermodynamically stable wurtzite form for the binary constituents (e.g., 700-800 °C for pure CdS and > 1,020 "C for pure ZnS). The type 11 pseudobinary CdxZni jcSe is of considerable interest in thin film form for the development of tandem solar cells as well as for the fabrication of superlattices and phosphor materials for monitors. The CdSe Tei-x alloy is one of the most investigated semiconductors in photoelectrochemical applications. 

Works on the electrochemical formation of copper sulfide have been reported mainly in connection with the fabrication of CujS/CdS junctions for solar cells [159-161]. 

Electrodeposition has been attempted also on flexible substrates within the scope of fabricating flexible solar cells. Huang et al. [177] investigated the electrodeposition of CIS on Au-coated plastic substrate from aqueous acidic (pH 1.65) solutions of millimolar CuCh, InCb, Se02, containing triethanolamine and sodium citrate. Stoichiometric, semiconductive CIS films (Eg = 1.18 eV) were obtained after annealing at 150 °C in nitrogen. 

Electrodeposition of copper indium disulfide (CulnS2) has been reported [180-182], In a typical instance, single-phase polycrystalline CuInS2 thin films composed of 1-3 fim sized crystallites were grown on Ti by sulfurization of Cu-ln precursors prepared by sequentially electrodeposited Cu and In layers [183]. In this work, solar cells were fabricated by electrodepositing ZnSe on CuInS2. Cyclic... 

The optical properties of electrodeposited, polycrystalline CdTe have been found to be similar to those of single-crystal CdTe [257]. In 1982, Fulop et al. [258] reported the development of metal junction solar cells of high efficiency using thin film (4 p,m) n-type CdTe as absorber, electrodeposited from a typical acidic aqueous solution on metallic substrate (Cu, steel, Ni) and annealed in air at 300 °C. The cells were constructed using a Schottky barrier rectifying junction at the front surface (vacuum-deposited Au, Ni) and a (electrodeposited) Cd ohmic contact at the back. Passivation of the top surface (treatment with KOH and hydrazine) was seen to improve the photovoltaic properties of the rectifying junction. The best fabricated cell comprised an efficiency of 8.6% (AMI), open-circuit voltage of 0.723 V, short-circuit current of 18.7 mA cm, and a fill factor of 0.64. 

Aqueous cathodic electrodeposition has been shown to offer a low-cost route for the fabrication of large surface n-CdS/p-CdTe solar cells. In a typical procedure, CdTe films, 1-2 xm thick, are electrodeposited from common acidic tellurite bath over a thin window layer of a CdS-coated substrate under potential-controlled conditions. The as-deposited CdTe films are stoichiometric, exhibit strong preferential (111) orientation, and have n-type conductivity (doping density typically... 

Peter and Wang [266] invented a channel flow cell for rapid growth of CdTe films they showed that 2 p,m Aims can be deposited in less than 20 min, as opposed to the 2-3 h normally required in the conventional stirred single batch cells. The as-deposited films were structurally more disordered than the conventional ones, but after annealing and type conversion they became suitable for fabrication of efficient solar cells. A test cell with an AMI.5 efficiency approaching 6% was fabricated using a film prepared in the channel cell. 

McGregor SM, Dharmadasa IM, Wadsworth 1, Care CM (1996) Growth of CdS and CdTe by electrochemical technique for utilisation in thin film solar cells. Opt Mater 6 75-81 Morris GC, Das SK (1992) Some fabrication procedures for electrodeposited CdTe solar cells. Int J Sol Energy 12 95-108... 

Hyun et al. [345] prepared PbS Q-dots in a suspension and tethered them to Ti02 nanoparticles with a bifunctional thiol-carboxyl linker molecule. Strong size dependence due to quantum confinement was inferred from cyclic voltammetry measurements, for the electron affinity and ionization potential of the attached Q-dots. On the basis of the measured energy levels, the authors claimed that pho-toexcited electrons should transfer efficiently from PbS into T1O2 only for dot diameters below 4.3 nm. Continuous-wave fluorescence spectra and fluorescence transients of the PbS/Ti02 assembly were consistent with electron transfer from small Q-dots. The measured charge transfer time was surprisingly slow ( 100 ns). Implications of this fact for future photovoltaics were discussed, while initial results from as-fabricated sensitized solar cells were presented. 

Pawar SM, Moholkar AV, Rajpure KY, Kim JH, Lokhande CD, Bhosale CH (2009) Fabrication of Fe CdSe solar rechargeable (semiconductor-septum) storage cells. Curr Appl Phys9 1122-1124... 

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