Secondary ions mass spectroscopy

Secondary ion mass spectroscopy (SIMS) utilizes a high-energy primary ion beam to sputter and eject secondary ions from solid surfaces. The ejected ions are analyzed with a mass spectrometer. Elemental and chemical information can be obtained. The SIMS also has excellent spatial resolution. 

Grit-blasted aluminum, as well as grit-blasted and GPTS pretreated aluminum, were coated with a commercial epoxy adhesive. The reactions between the different coating components were analyzed using SIMS [47]. Several different hydrocarbon fragments were found at low mass for example, (mass/charge (m/z)=29 

These ions were contributions from the substrate as well as GPTS coating. The fragments at m/z=28 Da were assigned to the presence of Si+ as well as a small contribution from Similarly, other fragments at m/z= 77, 

---

SIMS Secondary-ion mass spectroscopy [106, 166-168] (L-SIMS liquids) [169, 170] Ionized surface atoms are ejected by impact of -1 keV ions and analyzed by mass spectroscopy Surface composition... 

SIMS Secondary Ion mass spectroscopy A beam of low-energy Ions Impinges on a surface, penetrates the sample and loses energy In a series of Inelastic collisions with the target atoms leading to emission of secondary Ions. Surface composition, reaction mechanism, depth profiles... 

NIRMS = noble-gas-ion reflection mass spectrometry OSEE = optically stimulated exoelectron emission PES = photoelectron spectroscopy PhD = photoelectron diffraction SIMS = secondary ion mass spectroscopy UPS = ultraviolet photoelectron spectroscopy ... 

Secondary Ion Mass Spectroscopy (SIMS). When the p-n junction and the GaAs/GaAlAs heterojunction are not coincident, carrier recombination occurs, reducing the current and the performance of fabricated heterojunction bipolar transistors. 

The main experimental techniques used to study the failure processes at the scale of a chain have involved the use of deuterated polymers, particularly copolymers, at the interface and the measurement of the amounts of the deuterated copolymers at each of the fracture surfaces. The presence and quantity of the deuterated copolymer has typically been measured using forward recoil ion scattering (FRES) or secondary ion mass spectroscopy (SIMS). The technique was originally used in a study of the effects of placing polystyrene-polymethyl methacrylate (PS-PMMA) block copolymers of total molecular weight of 200,000 Da at an interface between polyphenylene ether (PPE or PPO) and PMMA copolymers [1]. The PS block is miscible in the PPE. The use of copolymers where just the PS block was deuterated and copolymers where just the PMMA block was deuterated showed that, when the interface was fractured, the copolymer molecules all broke close to their junction points The basic idea of this technique is shown in Fig, I. 

The interface properties can usually be independently measured by a number of spectroscopic and surface analysis techniques such as secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy (XPS), specular neutron reflection (SNR), forward recoil spectroscopy (FRES), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), infrared (IR) and several other methods. Theoretical and computer simulation methods can also be used to evaluate H t). Thus, we assume for each interface that we have the ability to measure H t) at different times and that the function is well defined in terms of microscopic properties. 

The most widely used techniques for surface analysis are Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), Raman and infrared spectroscopy, and contact angle measurement. Some of these techniques have the ability to determine the composition of the outermost atomic layers, although each technique possesses its own special advantages and disadvantages. 

X-ray scattering studies at a renewed pc-Ag/electrolyte interface366,823 provide evidence for assuming that fast relaxation and diffu-sional processes are probable at a renewed Sn + Pb alloy surface. Investigations by secondary-ion mass spectroscopy (SIMS) of the Pb concentration profile in a thin Sn + Pb alloy surface layer show that the concentration penetration depth in the solid phase is on the order of 0.2 pm, which leads to an estimate of a surface diffusion coefficient for Pb atoms in the Sn + Pb alloy surface layer on the order of 10"13 to lCT12 cm2 s i 820 ( p,emicai analysis by electron spectroscopy for chemical analysis (ESCA) and Auger ofjust-renewed Sn + Pb alloy surfaces in a vacuum confirms that enrichment with Pb of the surface layer is probable.810... 

The control of materials purity and of environmental conditions requires to implement physico-chemical analysis tools like ESC A, RBS, AUGER, SEM, XTM, SIMS or others. The principle of SIMS (Secondary Ion Mass Spectroscopy) is shown in Eig. 31 an ion gun projects common ions (like 0+, Ar+, Cs+, Ga+,. ..) onto the sample to analyze. In the same time a flood gun projects an electron beam on the sample to neutralize the clusters. The sample surface ejects electrons, which are detected with a scintillator, and secondary ions which are detected by mass spectrometry with a magnetic quadrupole. 

The brief history, operation principle, and applications of the above-mentioned techniques are described in this chapter. There are several other measuring techniques, such as the fluorometry technique. Scanning Acoustic Microscopy, Laser Doppler Vibrometer, and Time-of-flight Secondary Ion Mass Spectroscopy, which are successfully applied in micro/nanotribology, are introduced in this chapter, too. 

Benninghoven, A., Surface Investigation of Solids by the Static Mmethod of Secondary Ion Mass Spectroscopy (SIMS), Surf Set., Vol. 35,1973, pp. 427-457. 

We will first consider, however, Secondary Ion Mass Spectroscopy (SIMS) in which both neutral and charged species are sputtered from the surface, and detected by means of a mass spectrometer. This involves ion beams of lower energy than in the techniques described previously. 

Cherepin, V. (1987) Secondary Ion Mass Spectroscopy of Solid Surfaces, VNU Science Press, Utrecht. 

Vickerman, J.C., Brown, A. Reed, N.M. Eds. (1989) Secondary Ion Mass Spectroscopy, Clarendon Press, Oxford. 

Ion beam probes are used in a wide range of techniques, including Secondary Ion Mass Spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS) and proton-induced X-ray emission (PIXE). The applications of these and number of other uses of ion beam probes are discussed. 

---