Ohmic

Let us imagine a solenoid traversed by an alternating sinusoidal current near a conducting piece. The tension U on the coil is the sum of the tension Rsl due to the ohmic drop of potential in the coil of resistance Rs in the absence of eddy current and of the tension e opposing to the tension e given by the LENZS law ... 

Ohmic Drops. Another irreversible contribution to the measured cell voltage is the ohmic or JR drop across the electrolyte, separator, and cell hardware. The JR drop across the hardware can be estimated from Ohm s law and the relationship... 

The ohmic drop across the electrolyte and the separator can also be calculated from Ohm s law usiag a modified expression for the resistance. When gas bubbles evolve at the electrodes they get dispersed ia and impart a heterogeneous character to the electrolyte. The resulting conductivity characteristics of the medium are different from those of a pure electrolyte. Although there is no exact description of this system, some approximate treatments are available, notably the treatment of Rousar (9), according to which the resistance of the gas—electrolyte mixture, R, is related to the resistance of the pure electrolyte, R ... 

The components of the diaphragm, membrane, and mercury cell voltages presented ia Table 8 show that, although the major component of the cell voltage is the term, ohmic drops also contribute to the irreversible energy losses duting the operation of the cells. 

Most of the voltage savings in the air cathode electrolyzer results from the change in the cathode reaction and a reduction in the solution ohmic drop as a result of the absence of the hydrogen bubble gas void fraction in the catholyte. The air cathode electrolyzer operates at 2.1 V at 3 kA/m or approximately 1450 d-c kW-h per ton of NaOH. The air cathode technology has been demonstrated in commercial sized equipment at Occidental Chemical s Muscle Shoals, Alabama plant. However, it is not presentiy being practiced because the technology is too expensive to commercialize at power costs of 20 to 30 mils (1 mil = 0.1 /kW). 

In low temperature fuel ceUs, ie, AEG, PAEC, PEEC, protons or hydroxyl ions are the principal charge carriers in the electrolyte, whereas in the high temperature fuel ceUs, ie, MCEC, SOEC, carbonate and oxide ions ate the charge carriers in the molten carbonate and soHd oxide electrolytes, respectively. Euel ceUs that use zitconia-based soHd oxide electrolytes must operate at about 1000°C because the transport rate of oxygen ions in the soHd oxide is adequate for practical appHcations only at such high temperatures. Another option is to use extremely thin soHd oxide electrolytes to minimize the ohmic losses. 

Electrowinning from Aqueous Solutions. Electrowinriing is the recovery of a metal by electrochemical reduction of one of its compounds dissolved in a suitable electrolyte. Various types of solutions can be used, but sulfuric acid and sulfate solutions are preferred because these are less corrosive than others and the reagents are fairly cheap. From an electrochemical viewpoint, the high mobiUty of the hydrogen ion leads to high conductivity and low ohmic losses, and the sulfate ion is electrochemicaHy inert under normal conditions. 

Copper Sulfide—Cadmium Sulfide. This thin-film solar cell was used in early aerospace experiments dating back to 1955. The Cu S band gap is ca 1.2 eV. Various methods of fabricating thin-film solar cells from Cu S/CdS materials exist. The most common method is based on a simple process of serially overcoating a metal substrate, eg, copper (16). The substrate first is coated with zinc which serves as an ohmic contact between the copper and a 30-p.m thick, vapor-deposited layer of polycrystaUine CdS. A layer is then formed on the CdS base by dipping the unit into hot cuprous chloride, followed by heat-treating it in air. A heterojunction then exists between the CdS and Cu S layers. 

Stability, and can provide both ohmic low resistance contacts and rectifying contacts. Typically, siUcide layers are formed in situ by sputteriag a thin platiaum layer onto the siUcon surface, followed by sintering. Infrared detection is another appHcation of platiaum siUcide technology. 

Fig. 9. Schottky barrier band diagrams (a) a rare situation where the metal work function is less than the semiconductor electron work affinity resulting in an ohmic contact (b) normal Schottky barrier with barrier height When the depletion width Wis <10 nm, an ohmic contact forms.

Both ohmic and rectifying behavior are possible, depending on the sign of Unlike the p—n junction the current in a rectifying Schottky barrier... 

Fig. 5. Structures and electric fields for (a) Read IMPATT diode and (b) Schottky cathode TED where represents ohmic and USchottky contact, and i...

Metals for Schottl Contacts. Good Schottky contacts on semiconductor surfaces should not have any interaction with the semiconductor as is common in ohmic contacts. Schottky contacts have clean, abmpt metal—semiconductor interfaces that present rectifying contacts to electron or hole conduction. Schottky contacts are usuaHy not intentionaHy annealed, although in some circumstances the contacts need to be able to withstand high temperature processing and maintain good Schottky behavior. 

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