Ohmic behaviour

Contacts to AlInN were examined in [6]. Titanium and aluminium metallisations exhibited ohmic behaviour and their thermal stability was evaluated. InN-based ohmic contacts were examined also by Donovan et al [7], The use of sapphire substrates combined with growth temperatures in the vicinity of 575°C produced acceptable contact resistances in the range of 10"6 Q cm2. 

Taking into account thermally generated carriers (Ohmic behaviour at low voltages), the following equation describes the transition from Ohm s law to Child s law ... 

Figure 8.22. Four types of ohmic behaviour observed in amorphous materials (a) VCNR (b) VCNR with memory (c) CCNR (d) CCNR with memory (Fritzsche, 1974).

Figure 15.7 Injection efficiencies ofpentacene TFTs. Comparison of ohmic and non-ohmic behaviour. The contacts of the so called good device were fabricated using shadow masks, and the contacts of the so called bad device were fabricated using optical hthography.

The I- V characteristic in vacuum shows a slight ohmic behaviour without any threshold voltage or NDR region. Contrary to these curves, the same device behaves very similarly in air and dry O2. In general, the threshold voltage and the NDR region varied from sweep to sweep and no relationship could be noticed between the condition in air or pure O2. 

Ag does not form a silicide or a carbide. Niles et al [105] studied Ag on ion-bombarded P-SiC using core-level and valence-band photoemission. Three-dimensional island growth is observed during deposition near 25 °C. The interface is non-reactive and exhibits ohmic behaviour. Annealing in the 400 - 600 °C range leads to coalescence of the Ag, with bare SiC between clusters, and higher temperatures lead to evaporation of essentially all the metal. 

At low temperatures (< 250 K), where the mobility is low, we have found some nonlinear effects, as shown in Fig. 3. From the temperature T and the electric field E where the non-ohmic behaviour starts, we can give an estimation of the hopping distance R kT/ e E 60 A. This is about the same as... 

Subunit III of CFq was electroeluted from SDS-gels, either from the 8 kD oand (monomer) or the 48 kD band (hexamer (10)) and incorporated into large liposomes. They showed no differences in electrophysiological behaviour. Aside from a conductance level of about 13 pS (in 100 mM KQ) at least two further conductance levels (of about 21 pS and 33 pS) were detected. They showed ohmic behaviour between +100 mV and -100 mV (Fig. 5). EF, the homologous channel portion of the ATP-synthase of E. coli (11) yielded similar single-channel activities (Rg.4). 

Figure 2.4 illustrates equation (2.50) in a schematic fornit and shows certain sloping, straight lines indicating ohmic behaviour, i.e. the current is linearly dependent on potential (and, hence, on the interelectrode distance x). In the case of an electrode and its busbar (the pair constituting iRokcinr electrode)... 

Since the calculation of the cell conductance depends on the assumption of ohmic behaviour, which pertains only at the instant of initial application of the applied voltage, it is difficult to determine conductance accurately from DC measurements on test cells with blocking electrodes. 

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