Conduction/conductivity ohmic

Many properties of electrolyte solutions (e.g., electric conductance, ohmic losses, and power capability of a battery electrophoresis and polar-ography polarization and depolarization of electric double layers electroplating and electrodeposition) depend directly or indirectly on the ion mobility of its constituents. This entry deals with the ion mobility in aqueous and nrmaqueous solutions. For other systems, the reader is referred to monographs of, e.g., J. Maier [1] for solids or of K. Kontturi et al. [2] for membranes or electrodes. 

Let us imagine a solenoid traversed by an alternating sinusoidal current near a conducting piece. The tension U on the coil is the sum of the tension Rsl due to the ohmic drop of potential in the coil of resistance Rs in the absence of eddy current and of the tension e opposing to the tension e given by the LENZS law ... 

The ohmic drop across the electrolyte and the separator can also be calculated from Ohm s law usiag a modified expression for the resistance. When gas bubbles evolve at the electrodes they get dispersed ia and impart a heterogeneous character to the electrolyte. The resulting conductivity characteristics of the medium are different from those of a pure electrolyte. Although there is no exact description of this system, some approximate treatments are available, notably the treatment of Rousar (9), according to which the resistance of the gas—electrolyte mixture, R, is related to the resistance of the pure electrolyte, R ... 

Electrowinning from Aqueous Solutions. Electrowinriing is the recovery of a metal by electrochemical reduction of one of its compounds dissolved in a suitable electrolyte. Various types of solutions can be used, but sulfuric acid and sulfate solutions are preferred because these are less corrosive than others and the reagents are fairly cheap. From an electrochemical viewpoint, the high mobiUty of the hydrogen ion leads to high conductivity and low ohmic losses, and the sulfate ion is electrochemicaHy inert under normal conditions. 

Metals for Schottl Contacts. Good Schottky contacts on semiconductor surfaces should not have any interaction with the semiconductor as is common in ohmic contacts. Schottky contacts have clean, abmpt metal—semiconductor interfaces that present rectifying contacts to electron or hole conduction. Schottky contacts are usuaHy not intentionaHy annealed, although in some circumstances the contacts need to be able to withstand high temperature processing and maintain good Schottky behavior. 

Resistance welding has been successfully appHed to copper alloys in all of its various spot, seam, or butt joining modes. Because the process depends on ohmic (l R) heating at the interface to be joined, the abiHty to resistance weld is inversely related to electrical conductivity of the alloys being welded. 

In contrast to signal spread, according to Eq. (3-48) for a coating with few defects, in this case a locally almost constant conductivity is assumed. For the extreme case of an uncoated pipe and neglecting the ohmic polarization resistances, there is a distance x = a where both voltage drops of Eqs. (3-52) and (3-53) are equal... 

Tafel slope (Napieran loop) transfer coefficient diffusion layer thickness dielectric constant, relative electric field constant = 8.85 x 10 F cm overvoltage, polarization ohmic voltage drop, resistance polarization specific conductance, conductivity electrochemical potential of material X,... 

See 2-3. Provided /c is above 2 pS/m, charged hydrocarbons such as gasoline contained within grounded, conductive containers or pipe lose charge to ground at a first order (Ohmic) rate governed by the following equations... 

The hyperbolic relaxation equation (A-5-2.4.1 a) contains charge carrier mobility as a variable, which should be sensitive to oil viscosity. This is found to be the case for some viscous nonconductive liquids. These have much slower rates of charge dissipation equivalent to an Ohmic liquid whose conductivity is 0.02 pS/m (5-2.5.4). 

In a light-emitting MSM structure the two metal electrodes selected such that the work functions of the electrodes are near the edge of the valence band (VB) and the conducting band (CB) of the semiconductor, respectively, so that oppositely charge carriers are injected from the opposite electrodes. An ohmic and a rectifying contact is therefore formed in the MSM structure (see Fig. 9-22). 

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