Ohmic Contacts to GaN and the III-V Nitride Semiconductor Alloys

Metallisation Carrier concentration (cm3) Processing conditions Contact resistivity (Q cm2) Ref 

TABLE 2 Ohmic contacts with contact resistivities less than 1 2 cm2 on p-GaN. 

on High Temperature Electronics Albuquerque, New Mexico, USA, 14-18 June 1998 (IEEE, Piscataway, NJ, USA, 1998) p.134-7 ] 

---

Cl. 1 Ohmic contacts to GaN and the III-V nitride semiconductor alloys C1.2 Schottky barrier contacts to GaN Cl.3 Band offsets at interfaces between AIN, GaN and InN... 

---