Metal-oxide semiconductor FET

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... 

Variation of the nature of the gate electrode results in the different types of FET. For example, in the metal oxide semiconductor FET (MOS-FET) palladium/palladium oxide is used as the gate electrode. This catalyti-cally decomposes gases such as hydrogen sulphide or ammonia with the production of hydrogen ions, which pass into the semiconductor layer. An enzyme may be coated on the palladium, e.g. urease, which catalyses the production of ammonia from urea and thus provides a device for the measurement of this substrate. 

Fig. 1. (a) Structure of eui ion-sensitive FET transducer with single FET element, (b) Structure of an ion-sensitive FET with metal oxide semiconductor FET. D, drain S, source IG, ion-sensitive gate CP, contact pad G, gate RE, reference electrode AS, analyte solution MOSFET, metal oxide semiconductor FET ISFET, ion-sensitive FET. 

The basic idea that guides the insulated-gate field-effect transistor (FET) traces back to the mid-1920s [14], but it was not until 1960 that this early concept could be successfully demonstrated, with the invention of the metal-oxide-semiconductor FET (MOSFET) [15]. Field-effect measurements on copper phthalocyanine films were... 

Field-effect transistors exist in two major types the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET). The junction FET has a... 

Metal-oxide-semiconductor FETs (MOSFETs) were also prepared by electrochemical polymerization using PPy and N-alkyl substituted PPy films, including poly (N-methylpyrrole) (PNMePy) and poly (N-ethylpyrrole) (PNEtPy) as a p-type semiconductor and p-toluenesulfonic acid monohydrate as a supporting electrolyte [168]. Figure 8.93 represents the cross-sectional view of the fabricated MOSFET. The mobility of PPy and PNEtPy FETs was 1.7 cm s, which is close to the value of silicon inorganic transistors [168]. 

Metal/semiconductor, 19-2, 19-4—19-10 Metal-containing polythiophenes, 13-33-13-37 Metal-insulator transition (MIT), 16-2 Metallic box model, 15-65-15-66 Metallic islands, 16-2, 16-5, 16-9, 16-17 Metal-oxide-semiconductor FETs, 8-77 Metal-polyaniline composite, 7-26 in-situ metathesis reaction, 7-29 Meta-substituted polyanilines, 7-36-7-38 Microcontact printing, 8-56, 8-58 p, CP, 9-28-9-27 of rr-PATs, 9-28-9-30 Microdisk lasers, 22-56, 22-57-22-61 Micro-fibers, 16-3, 16-5, 16-11-16-12 Micromolding in capillaries (MIMIC), 9-27 Microring laser, 22-21, 22-54-22-57 Microscopic cracks, 9-24 Microtransfer molding (p TM), 9-28-9-27 Microwave electrochromism, 20-49-20-50 Miller—Abrahams theory, 2-4-2-5, 2-19 MM and DD calculations, 1-24 Mobility edge (Ec), 15-8, 15-20, 15-42 Mobility, 2-2-2-3, 2-5, 2-9, 2-17, 2-19, 9-24-9-26, 9-33-9-34... 

MOSFET Metal Oxide Semiconductor FET. Layer composition of MOSFETs,... 

---