MOSFETs metal oxide semiconductor field

MOSFET metal oxide semiconductor field effect transistor MSB most significant bit/byte... 

MOS metal oxide sensor, MOSFET metal oxide semiconductor field-effect transistor, IR infrared, CP conducting polymer, QMS quartz crystal microbalance, IMS ion mobility spectrometry, BAW bulk acoustic wave, MS mass spectrometry, SAW siuface acoustic wave, REMPI-TOFMS resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry... 

Figure 19.8—A selective electrode designed from a MOSFET (metal oxide semiconductor field effect transistor). A specific reaction can be monitored by putting an enzyme in contact with the electrodes. This schematic shows the three electrodes used for amperometric measurement.

Gallium arsenide s native oxide is found to be a mixture of nonstoichiometric galhum and arsenic oxides and elemental arsenic. Thus, the electronic band structure is found to be severely disrupted, causing a breakdown in normal semiconductor behavior on the GaAs surface. As a consequence, the GaAs MISFET (metal insulator semiconductor field-effect transistor) equivalent to the technologically important Si-based MOSFET (metal-oxide semiconductor field-effect transistor) is, therefore, presently unavailable. 

In Figure 5-la is shown a schematic representation of a silicon MOSFET (metal-oxide-semiconductor field effect transistor). The MOSFET is the basic component of silicon-CMOS (complimentary metal-oxide-semiconductor) circuits which, in turn, form the basis for logic circuits, such as those used in the CPU (central processing unit) of a modern personal computer [5]. It can be seen that the MOSFET is isolated from adjacent devices by a reverse-biased junction (p -channel stop) and a thick oxide layer. The gate, source and drain contact are electrically isolated from each other by a thin insulating oxide. A similar scheme is used for the isolation of the collector from both the base and the emitter in bipolar transistor devices [6],... 

MOSFET Metal oxide semiconductor field-effect... 

MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor... 

MOSFET Metal-oxide-semiconductor field effect transistor NASA National Aeronautics and Space Administration OEM Original equipment manufacturer... 

Directed self-assembly shows promise in advanced lithography and a variety of other applications that have less complex requirements. For example, directed self-assembly could be used for enhancing etch selectivity, placing dopants in ordered arrays, or generating high-density, close-packed electrodes in capacitor arrays [6]. Additionally, the assembled nanostructures could be used for fabricating densely packed porous templates [12-14] or membranes [15, 16] at the nanoscale. Other potential applications of assembled block copolymer thin films include the fabrication of MOSFETs (metal-oxide-semiconductor field-effect transistors) [17], quantum dots [18], high surface area devices [19, 20], photovoltaic devices [21], and bit patterned media [22-24]. 

Chapter 10- The continuous improvement of integrated circuit performance is achieved by reducing the dimensions of the key component of these circuits the MOSFET (metal-oxide-semiconductor field effect transistor). One of the key elements that allowed the successful scaling of silicon based MOSFET is certainly the excellent material and electrical properties of the gate dielectric so far used in these devices Si02. However, further scaling of... 

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