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Junction, semiconductor

For incomplete absorption of the primary blue light by the LUCO material, also mixed bluish-greenish (i.e. turquoise) colours can be generated. Additive colour mixing of the primary LED-blue with secondary photoluminescence-red results in magenta, a colour not accessible by conventional pn-junction semiconductor devices. [Pg.558]

The divergence of a laser beam depends on how it is produced a typical laboratory helium-neon laser has an angular aperture a = 0.241 millidegrees. In contrast, a typical pn junction semiconductor laser has a. = 50°. [Pg.601]

Let us consider a composite rust layer consisting of an anion-selective inner layer and a cation-selective outer layer as shown in Figure 22.33a. A bipolar ion-selective layer of this type may be realized when the outer part of an anion-selective layer is made cation-selective by the adsorption of multivalent anions. As with the electronic rectifier of p-n junction semiconductors, a bipolar junction consisting of an anion-selective layer and a cation-selective layer rectifies the ionic current across the bipolar layer. The ion transfer current in the anodic direction is thus suppressed across the bipolar layer as shown in Figure 22.34, where the anodic ion transport current is seen to be restricted across a bipolar ferric hydroxide membrane in sodium chloride solution [70]. [Pg.573]

Study multi-junction semiconductor systems for higher efficiency water splitting. [Pg.125]

Insulator, amorphous (impurity) Semiconductor (p-n junction) Semiconductor (electron-hole plasma)... [Pg.1583]

The liquid-junction semiconductor electrodes stabilized by polymer-coating can be used for photochemical conversion systems. The stabilized n-CdS coated with PP which incorporates RUO2 as catalyst was used for visible-light-induced water cleavage Photochemical diodes were fabricated by coating CdS with PP and polystyrene films, the latter containing metal dispersions such as Pt, Rh and RUO2 as a catalyst (Fig. 35). [Pg.206]

Semiconductor detectors are often used in the mid- and near-infrared. These detectors are generally p-n junction semiconductors. Semiconductors are so called because they have a relatively small bandgap between the valence and conduction bands of the material. If electrons can be promoted from the valence band to the conduction band, the material will pass a current. In semiconductor detectors, the energy of a photon is greater than the bandgap and promotes an electron from the valence band to the conduction band. The ensuing current is used to register the detection of the photons. Typically, these detectors are comprised of... [Pg.148]


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See also in sourсe #XX -- [ Pg.351 ]

See also in sourсe #XX -- [ Pg.351 ]




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