EEPROM memory

The RD-02 is a totally independent probe. It does not need control from the area centre or any other device. It measures the dose rate and saves the measurement data in its memory. There is space for 80 measurement results. These results can be sent out through the RS-232 serial connection on request. The excellent linearity in the whole dose rate range is accomplished by the Time Interval Method (TIM) developed by Alnor in the early 1980s. This method calculates dose rate from the time interval measured between pulses, thus cancelling the need to take the dead time of the GM-tubes into account. Calibration factors are saved in the RD-02 s EEPROM memory. Probes can easily be removed and sent to a calibration laboratory. Thus, there is no need for on-site calibration. 

A 25 MHz 68040 Motorola microprocessor CPU board, with 2 megabytes of secured read only flash, 2 megabytes of RAM and 64 kilobytes of non-volatile EEPROM memory. This board can provide up to 4 NERVIA interfaces,... 

The object oriented data structures and in-flight methods are not inherent parts of the hard-coded on-board core software. They can at any time be uplinked as standalone telecommands. In order not to lose them upon temporary power losses (see below, LTS survival mode), they are stored in reprogrammable EEPROM memory. 

To minimize the risk of data loss because of power failure or other reasons, the Mossbauer data are copied to a nonvolatile EEPROM (Electrically Erasable Programmable Read-Only Memory) every 9 minutes (software selectable). As the size of the EEPROM is smaller than the SRAM, the EEPROM can accumulate only up to ten Mossbauer spectra as a subset of the data from the SRAM. These spectra are obtained from the SRAM according to a pre-defined summation strategy. 

In Table 1 we compare performance data for reported MRAM and FRAM prototypes. The small Fujitsu FRAM is not a prototype it is in large-scale production and found in the memory board of every Sony Playstation 2, as part of the Toshiba memory system. The main advantages of FRAMs over EEP-ROMs or Elash memory are in the WRITE times (100 ns for FRAM, versus 1 xs for Flash and 10 xs for EEPROM), and energy per 32-bit WRITE (1 nj for ERAM versus 1 or 2 mj for EEPROM or Plash). Note that parameters such as READ time or WRITE time for PRAMs are dependent upon actual cell architecture they are not limited by the intrinsic switching time of the ferroelectric thin film, which is typically 220 ps [3]. 

For non-volatile random access memories (NV-RAMs in which the stored information is retained even if power to the chip is interrupted), ferroelectrics serve not just as capacitors (as in the case of the DRAM, described below), but as the memory element itself. Their principal advantages in this application are low-voltage (1.0 V) operation, small size (about 20% of a conventional EEPROM cell - and cost is proportional to size once high-yield production is achieved), radiation hardness (not just for military applications but also for satellite communications systems) and very high speed (60 ns access time in commercial devices, sub-nanosecond in laboratory tests on single cells). 

EEPROM, electrically erasable programmable read-only memory - a FLASH memory. 

EEPROM Eleetrorrieally Erasable Programmable Read Only Memory... 

A, B, E, F. Since ROM stands for read-only memory and PROM stands for programmable ROM, they automatically are incorrect answers for the question. RAM and SRAM are both monikers of short-term memory (RAM), and therefore have to be erasable to be of any use. EPROM and EEPROMs are both special types of PROMs that are Erasable Programmable (EPROM) and Electronically Erasable and Programmable (EEPROM) and therefore have the ability to be erasable and re-usable. 

EEPROM Acronym for Electrically Erasable Programmable Read-Only Memory. A memory chip that maintains its contents without electrical power, and whose contents can be erased and reprogrammed either within the computer or from an external source. EEPROMs are used where the application requires stable storage without power but may have to be reprogrammed. 

The final portion of the digital circuitry to be considered is the memory. This remains a complete unknown for organic/printed electronics at this time. The memory must necessarily be nonvolatile. For some RFID architectures, it will be necessary to provide EEPROMs or at least PROMs, since some programmability in the... 

Due to the limited dimensions of this block all the routines that are not part of the mam loop or the routines to handle low frequency interrupts, are located on the external EEPROM Also all the look up tables are located on the EEPROM This type of memory is slow compared to the DSP, and introduces one wait state for each read operation To avoid excessive time wastmg dunng the consultation of the look up tables, a search algonthm has been defined that reduces drastically the number of read operations... 

In the manufacture of smart cards, microprocessor chips, memory chips, EEPROMs or combinations in flip- chip configuration are electrically bonded onto the circuit card using anisotropic electrically conductive paste or film adhesive (see Chapter 1). Smart cards may be contact or contactless types. In contact cards, the electrical contacts of the card connect to a card reader when the card is inserted. Contactless cards transfer data in proximity to a reader (www.smartcard.gov) without physical contact. 

Thin-film redistribution process using wafer-level passivation and cyclotene dielectric High-performance wafer-level CSP, JEDEC MSL 1 UltraCSP (Flip Chip Technology, Amkor and K S Flip Chip Division of Kulicke Sofia) EEPROM, Flash memory, DRAM, and standard electronic devices, PDAs, laptop PCs, disk drives, GPS, and MP3 players... 

Flash memory is read and write memory, and data memories do not disappear even through loss of electric power. Therefore, flash memories are widely applied to USB memory, SD memory card, smart media, and compact flash. Flash memory is also applied to hard disks for computers. NAND flash is NAND (NOT AND gate) flash memory. EEPROM is electrically erasable programmable read-only memory, which is called flashed ROM. 

Electrical Erasable Read-Only Memory (EEPROM)... 

Nonvolatile ferroelectric random access memory (FRAM) devices Dynamic random access memory (DRAM) and static random access memory (SRAM) devices based on semiconductor technology are volatile that is, they wiU lose stored information when the power fails. Nonvolatile devices such as CMOS (complementary metal oxide semiconductors) and EEPROMs (electrically erasable read-only memories) are forbiddingly expensive for mass-produced electronic devices. As described above (see Section 8.3), the magnitude and direction of polarization of a ferroelectric ceramics can be reversed by applying an external electric field, and this method is used by FRAMs to store (or erase) data. As the materials have a nonlinear hysteresis curve, the polarization remains in the same state when the voltage is switched off (i.e., the information originally stored is maintained). In addition, FRAMs may be radiation-hardened for use in harsh environments such as outer space (Scott and Paz de Araujo, 1989). 

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