Circuit fabrication

Circuit breakers Circuit fabrication Circuits B. circulans... 

First planar integrated circuits fabricated r Electron beam lithography demonstrated Dry film laminate resist introduced... 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

The term direct TXRF refers to surface impurity analysis with no surface preparation, as described above, achieving detection Umits of 10 °—10 cm for heavy-metal atoms on the silicon surface. The increasit complexity of integrated circuits fabricated from silicon wafers will demand even greater surfrce purity in the future, with accordingly better detection limits in analytical techniques. Detection limits of less than 10 cm can be achieved, for example, for Fe, using a preconcentration technique known as Vapor Phase Decomposition (VPD). 

Luo, J. and Dorfeld, D. A., Material Removal Regions in Chemical Mechanical Planarization for Sub-micron Integrated Circuit Fabrication Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, IEEE Trans. Semicond. Manuf, Vol. 16, No. 1, 2003, pp. 45-56. 

Elliott, D., 1989, Integrated circuit fabrication technology, McGraw-Hill, New York. 

King, M. C. IEEE Trans. Electron Devices, 1979, ED-26, 711. Herriott, D. R. Brewer, G. R. "Electron-Beam Lithography Machines" in Electron-Beam Technology in Microelectronic Circuit Fabrication, Academic Press, New York, New York, 1981 pp 141-216. 

Phadke, M.S., Kackar, R.N., Speeney, D.V., and Grieco, M.J. (1983), Off-Line (Juality Control in Integrated Circuit Fabrication Using Experimental Design, Bell Sys. Tech. J., 62, 1273-1309. 

Examples are the deposition of polycrystalline silicon coatings in microelectronic circuit fabrication by reactions such as the decomposition of silane,... 

Implications of Electronic and Ionic Conductivities of Polyimide Films in Integrated Circuit Fabrication... 

The increasing importance of multilevel interconnection systems and surface passivation in integrated circuit fabrication has stimulated interest in polyimide films for application in silicon device processing both as multilevel insulators and overcoat layers. The ability of polyimide films to planarize stepped device geometries, as well as their thermal and chemical inertness have been previously reported, as have various physical and electrical parameters related to circuit stability and reliability in use (1, 3). This paper focuses on three aspects of the electrical conductivity of polyimide (PI) films prepared from Hitachi and DuPont resins, indicating implications of each conductivity component for device reliability. The three forms of polyimide conductivity considered here are bulk electronic ionic, associated with intentional sodium contamination and surface or interface conductance. 

The type of adhesion dealt with in the examples in the second paragraph above and Fig. 1 is mechanical or structural while for the lithographic resist adhesion requirements described in this paper a more practical definition of adhesion, one first proposed by Mittal [16], is being referenced and used. Resist patterning layer-substrate adhesion is required only to process or pattern a particular device layer. After the circuit layer is patterned, the resist layer is removed and does not become an integral part of the circuit, as opposed to a PI interlevel metal dielectric layer which does. As such, it is not required to possess high mechanical adhesion strength. In fact, the resist layer must be quantitatively removed after the circuit required layer has been patterned. If the resist layer adheres too well and becomes difficult to remove, it actually interferes with successful circuit fabrication. 

Gise, Peter G. Blanchard, Richard "Semiconductor and Integrated Circuit Fabrication Techniques" Reston Publishing Company Reston, VA 1979. 

Imaging MS is and will become increasingly critical for many aspects of materials science. One example is in the semiconductor industry, where the ability to provide spatial and chemical information on the length scales of current integrated circuit fabrication (50 nm or better) with depth profiling to provide layer-by-layer maps of the fabricated layers is critical for the continued advancement of the computer industry. Maps of any heterogeneous surface are important in other areas of materials science. For example, using various laser desorption techniques, information about the molecules found in specific inclusions in meteorites or defects in reactive surfaces can be obtained. 

Other systems can be treated in a similar manner such as the Ti-B-CI-H system,10 and of course the Si-H-CI system has been exhaustively studied because of the commercial importance of silicon epitaxial films used for integrated circuit fabrication.11... 

One of the problems with cold wall systems is the difficulty in maintaining a very uniform temperature on the wafers. Such concern can be eliminated if the entire reactor chamber is placed within a furnace maintained at a very uniform temperature. An ideal candidate for such a furnace is the standard diffusion tube furnace already in wide use for integrated circuit fabrication. If in addition, wafers could be loaded vertically as in a diffusion furnace, the reactor throughput could be substantial. 

Kawase, T. and Friend, R.H., Polymer Transistor Circuits fabricated by Solution Processing and Direct Printing. In Thin Film Transistors, C.R. Kagan and P. Andry (Eds.), Marcel Dekker Inc, New York, 2003, pp. 427. 

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