Integrated circuit fabrication technology

Elliott, D., 1989, Integrated circuit fabrication technology, McGraw-Hill, New York. 

Elliot, D.J. Integrated Circuit Fabrication Technology, McGraw Hill New York, 1982. 

Elliott D J 1989 Integrated Circuit Fabrication Technology 2nd edn (New York McGraw-Hill)... 

Main Principles of Plasma Etching as Part of Integrated Circuit Fabrication Technology... 

The transition metals are used as metallization layers in Si device technology Upon heating, the thin (a few thousand A thick) transition-metal layers react uniformly with the Si substrate to form a silicide. From a typical transition-metal-Si binary phase diagram (see Fig. 1), the lowest T at which a liquid appears is greater than 900°C, which is above the process T used in integrated circuit fabrication. In Si device processing, silicide formation is therefore usually a solid-phase interaction. 

Chemical Mechanical Planarization (CMP) plays an important role in today s microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology - until now. 

Fan, W., 2012. Advanced Modeling of Planarization Processes for Integrated Circuit Fabrication. Massachusetts Institute of Technology, Cambridge (Massachusetts). 

The use of polyimides in integrated-circuit (IC) technology has received considerable attention. Polyimide films are excellent candidates to replace silicon dioxide and silicon nitride layers in IC fabrication because of their toughness, low conductivity, and reliability of processing. 

In order to reduce the size of integrated circuits, the technologies used to fabricate them have been continuously changing. As circuit features approach the nanometer scale, it has been proposed that devices (diodes, transistors, resistors, capacitors, and conductive tracks) could be made from molecules with suitable properties, instead of patterned doped silicon layers [65]. For that purpose, it is essential to characterize their electronic properties at the level of single molecules, and the molecular junction methods described above offer many advantages to do it. 

Metal wiring is necessary to electrically connect the many individual elements of an integrated circuit. Metallization technology has evolved along with other advances in integrated circuit fabrication. Aluminum and its alloys were the standard choice for metallization in integrated circuits for... 

A particular advantage of the elastomeric electrolyte is in the fabrication of on-chip power sources, in which thin film structures similar to those described above can be deposited directly as components on an integrated circuit. This technology has been demonstrated in principle but encapsulation problems have yet to be overcome due to the extreme reactivity of alkali metals. 

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