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Integrated circuit fabrication Chemical Vapor Deposition

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. [Pg.19]

Silicon Epitaxy. A critical step in IC fabrication is the epitaxial deposition of silicon on an integrated circuit. Epitaxy is defined as a process whereby a thin crystalline film is grown on a crystalline substrate. Silicon epitaxy is used in bipolar ICs to create a high resistivity layer on a low resistivity substrate. Most epitaxial depositions are done either by chemical vapor deposition (CVD) or by molecular beam epitaxy (MBE) (see Thin FILMS). CVD is the mainstream process. [Pg.346]


See other pages where Integrated circuit fabrication Chemical Vapor Deposition is mentioned: [Pg.230]    [Pg.253]    [Pg.432]    [Pg.186]    [Pg.204]    [Pg.137]    [Pg.131]    [Pg.662]    [Pg.698]    [Pg.386]    [Pg.1462]    [Pg.663]    [Pg.694]    [Pg.166]    [Pg.185]    [Pg.1046]    [Pg.161]    [Pg.56]    [Pg.3]    [Pg.457]    [Pg.139]    [Pg.1035]   
See also in sourсe #XX -- [ Pg.701 , Pg.702 , Pg.703 ]




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