Patterning resist

Step 8. The -type source and drain regions are created by As ion implantation. The As can penetrate the thin gate oxide, but not the thick field oxide or the polysihcon gate. The formation of the source and gate does not require a separate resist pattern, thus this technique is called self-aligning. 

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...

Must know common prevalent organisms and resistance patterns in your institution and intensive care unit... 

Trimethoprim-sulfamethoxazole, amoxicillin, first-generation cephalosporins, and erythromycin are not recommended due to susceptibility and resistance patterns of the likely infectious organisms. 

Empirical therapy should be directed at the most likely pathogen (s) for a specific patient, taking into account age, risk factors for infection (including underlying disease and immune dysfunction, vaccine history, and recent exposures), CSF Gram stain results, CSF antibiotic penetration, and local antimicrobial resistance patterns. 

Based on patient-specific data, local resistance patterns, and other relevant data, design an appropriate empirical antimicrobial regimen directed at the most likely pathogens empirical regimens should consist of high-dose intravenous cidal therapy. 

O Antibiotic resistance patterns affect treatment options for bacterial upper respiratory tract infections. 

Treatment guidelines developed by the Sinus and Allergy Health Partnership reflect antibiotic choices that are likely to result in favorable clinical and bacteriologic outcomes based on pathogen distribution, spontaneous resolution rates, and nationwide resistance patterns.310 These guidelines (Figs. 69-3 and 69-4) stratify therapy based on severity of disease and risk of infection with resistant organisms, defined as mild disease in patients with prior antibiotic use within 4 to 6 weeks. Other risk factors for resistance include day-care attendance or frequent... 

Oral, narrow-spectrum antibiotic therapy with activity against Staphylococcus aureus and streptococcal species. Include coverage for MRSA (HA- or CA-MRSA) according to patient history and resistance patterns in the area. 

Balzarini J, Karlsson A, De Clercq E. Human immunodeficiency virus typel drug-resistance patterns with different l-[(2-hydroxyethoxy)methyl]-6-(phe-nylthio)thyminc derivatives. Mol Pharmacol 1993 44 694-701. 

Balzarini J, Karlsson A, Perez-Perez M-J, Camarasa M-J, Tarpley WG, De Clercq E. Treatment of human immunodeficiency virus type 1 (HlV-l)-in-fected cells with combinations of HIV-l-specific inhibitors results in a different resistance pattern than does treatment with single-drug therapy. J Virol 1993 67 5353-5359. 

Sci. in press). In these studies, the PIQ (2.0 ym thick) was used as an underlayer. Thus, the film consisting of the polymer 11 and PIQ prepared on a silicon wafer was exposed to deep UV-light with the use of Canon contact aligner PLA-521 through a photomask for 5 to 6 s (UV intensity 72 mV/cm2 at 254 nm). The resulting film was then developed with a 1 5 mixture of toluene and isopropyl alcohol for 15 s and rinsed with isopropyl alcohol for 15 s. A positive resist pattern was obtained after treatment of the film pattern with 02 RIE under the condition of 0.64 W/cm2 (RF power 7 MHz, 02 pressure 3 mtorr). 

The SEM photograph of the double-layer resist pattern thus obtained is shown in Figure 5. In this way, submicron level line patterns where the minimum line width is 0.5 ym and the aspect ratio is above 3.0 could readily be obtained. 

Figure 5. Double-layer resist pattern prepared by using 11 as the top imaging layer.

Establish a protocol (eg, a preprinted order sheet) that standardizes antibiotic choice according to current published evidence, formulary availability, institutional resistance patterns, and cost,... 

Appropriate samples should be sent for culture and susceptibility testing prior to initiating therapy for all patients with active TB. This data should guide the initial drug selection for the new patient. If susceptibility data are not available, the drug resistance pattern in the area where the patient likely acquired TB should be used. 

Unusual strains or variants of organisms or antimicrobial resistance patterns different from those circulating... 

S. V. Gulnik, L. I. Suvorov, B. Liu, B. Yu, B. Anderson, H. Mitsuya, J. W. Erickson, Kinetic Characterization and Cross-Resistance Patterns of HIV-1 Protease Mutants Selected under Drug Pressure , Biochemisry 1995, 34, 9282-9287. 

The Figure 14 shows the cross-sectional pattern of the resist developed with a 2.38% TMAH aqueous solution. The mask had an equal line-space pattern. All the resist patterns shown in the photograph were obtained by 1.2 J/cm2 exposure and 50 second, 25°C development. The resist patterns, from 0.600micron line and space to 0.325 micron line and space, were the same as that of the mask size. However, the 0.300 micron line and space pattern was underdeveloped or under-exposured. The 0.275 micron line and space pattern was not opened. Figure 15 shows the relation between the mask size and the resist pattern size fabricated. 

The resist pattern was triangular, which was probably due to phenyl silane unbleachable absorbance. 

Figure 14. Cross section of polysilane (P-3) resist pattern exposed to KrF excimer laser. Development, 2.34% TMAH aqueous solution.

Figure 15. Relation between mask size and resist pattern size (see Figure 14).

The resist pattern profiles were evaluated using a JEOL JSM-T200 scanning electron microscope. 

Diazonium salts are also useful as a photosensitive material in a photobleachable two-layer resist system based on a doping process (10). High-resolution resist patterns were obtained using this two-layer resist scheme and an i-line reduction projection aligner. 

Figure 7. SEU photographs of resist patterns printed with and without the Dl-CEL on commercially available resist (Hitachi Chemical RI-7000P).

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