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Thin insulators

Figure 5 shows a typical metallic foil strain gauge. It consists of an etched grid of very thin foil attached to a thin insulating backing material. The... [Pg.325]

The interelectrode insulators, an integral part of the electrode wall stmcture, are required to stand off interelectrode voltages and resist attack by slag. Well cooled, by contact with neighboring copper electrodes, thin insulators have proven to be very effective, particularly those made of alumina or boron nitride. Alumina is cheaper and also provides good anchoring points for the slag layer. Boron nitride has superior thermal conductivity and thermal shock resistance. [Pg.430]

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. [Pg.467]

I One of the bearings should be insulated inside its housing by providing a layer of thin insulation as indicated at location 3 in Figure 10.8 to prevent circulating current through the motor bearings. [Pg.237]

Thus it has been shown that thin insulating layers (in the nanometer range) at the interface metal/polymer in a PLED can significantly reduce the onset electric field necessary for EL [58-63]. This is still not fully understood and has been ascribed to band bending at the interface [64]. [Pg.156]

For example, the investigations of the current-generating mechanism for the polyaniline (PANI) electrode have shown that at least within the main range of potential AEn the "capacitor" model of ion electrosorption/ desorption in well conducting emeraldine salt phase is more preferable. Nevertheless, the possibilities of redox processes at the limits and beyond this range of potentials AEn should be taken into account. At the same time, these processes can lead to the fast formation of thin insulation passive layers of new poorly conducting phases (leucoemeraldine salt, leucoemeraldine base, etc.) near the current collector (Figure 7). The formation of such phases even in small amounts rapidly inhibits and discontinues the electrochemical process. [Pg.319]

The conducting polymers show a significant non-faradaic component of the electrochemical mechanism inside the main range of potentials AEn. Nevertheless, the possibilities of redox processes at the limits and beyond this range of potentials should be taken into account. At the same time, these processes can lead to rapid formation of thin insulating... [Pg.320]

The quantum of magnetic flux is only 2.07 x 10-15 Wb, which is approximately equal to the amount of the earth s magnetic field enclosed by a ring of 10p,m in diameter. The Josephson effect is observed when two superconductors are separated by a very thin insulating layer (about 20 nm). Single electrons and Cooper pairs can tunnel through such a layer. The characteristics of the Josephson junction are now used to define the volt and have enabled the uncertainty in the maintained standard to be reduced to 0.1 p,V. [Pg.319]

In Fig. 29 the crucial elements are the p-doped Si layer, which can be replaced by any thin semiconducting layer, and the very thin insulator below the gate electrode. FET behavior was observed for polymeric LB films three decades ago [138], and by... [Pg.74]

Simmons JG (1963) Generalized formula for the electrical tunnel effect between similar electrodes separated by a thin insulating film. J Appl Phys 34 1793-1803... [Pg.112]

STM is directed to conducting samples on thin insulating films, bulk insulators have to be coated with metal... [Pg.228]

C.H. Lee, Enhanced efficiency and durability of organic electroluminescent devices by inserting a thin insulating layer at the Alq3/cathode interface, Synth. Met., 91 125-127 (1997). [Pg.397]

With recent trends toward microminiaturization and utilization of very thin conductor lines, close spacings, and very thin insulation, greater demands are being placed on the insulating layer. Reductions in such parasitic capacitance can... [Pg.167]

Possible sites for the hydrogen anneal phenomena might be surface states, for example, on either side of the native oxide on top of the SiC surface. However, lattice defects and contamination in the surface layer of the epilayer may also be involved, as indicated in the 1/C curves. These may be on different sides of the thin insulator between the metal and the SiC. The thin insulator in these samples is probably a thin native oxide, SiO and oxidized Ta, Ta O, from the TaSi layer. [Pg.53]

In 1962, Josephson predicted that if two superconducting metals were placed next to each other separated only by a thin insulating layer (such as their surface oxide coating) then a current would flow in the absence of any applied voltage. This effect is indeed observed... [Pg.398]

Cooling load calculations should be done on a room-by-room basis. Careful attention should be given to process equipment loads because these can be significant heat generators. In calculating this load, consideration should be given to motor load, convection, and radiation from heated vessels and thinly insulated process and utility piping. Attention... [Pg.39]


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See also in sourсe #XX -- [ Pg.121 ]




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