Complimentary Metal Oxide Semiconductors

For example, chloride and duoride ions, even in trace amounts (ppm), could cause the dissolution of aluminum metallization of complimentary metal oxide semiconductor (CMOS) devices. CMOS is likely to be the trend of VLSI technology and sodium chloride is a common contaminant. The protection of these devices from the effects of these mobile ions is an absolute requirement. The use of an ultrahigh purity encapsulant to encapsulate the passivated IC is the answer to some mobile ion contaminant problems. 

Fig. 6. Schematic of a cross section of a typical multilevel CMOS (complimentary metal oxide semiconductor) integrated circuit structure.

Your PC keeps these settings in a special memory chip called the Complimentary Metal-Oxide Semiconductor (CMOS) chip. Actually, CMOS (usually pronounced see-moss) is a type of memory chip. It is actually the parameter memory for the BIOS. But that doesn t translate into an easy-to-say acronym. So, because it s the most important CMOS chip in the computer, it has come to be called the CMOS. 

B. The computer has a special chip called CMOS (Complimentary Metal Oxide Semiconductor) that saves important configuration information when the computer is turned off. This includes date and time, hard drive configuration, and memory settings as well as other options. See Chapter 2 for more information. 

In Figure 5-la is shown a schematic representation of a silicon MOSFET (metal-oxide-semiconductor field effect transistor). The MOSFET is the basic component of silicon-CMOS (complimentary metal-oxide-semiconductor) circuits which, in turn, form the basis for logic circuits, such as those used in the CPU (central processing unit) of a modern personal computer [5]. It can be seen that the MOSFET is isolated from adjacent devices by a reverse-biased junction (p -channel stop) and a thick oxide layer. The gate, source and drain contact are electrically isolated from each other by a thin insulating oxide. A similar scheme is used for the isolation of the collector from both the base and the emitter in bipolar transistor devices [6],... 

FRET fluorescence resonance energy transfer FCS fluorescence correlation spectroscopy TIRF total internal reflection fiuorescence PCFI photon counting histogram ICCD intensified charge coupled device EMCCD eiectron muitipiying charge coupled device CMOS complimentary metal oxide semiconductor AFM atomic force microscope. 

Of course it is possible to reserve the polarities of these field-effect devices by exchanging the n- and p-materials. For many applications it is desirable to operate n- and p-devices side-by-side on the same substrate. This is accomplished by p-doping a region in an n-type substrate large enough to accommodate an n-channel device so that it may work in parallel with an adjacent p-channel device. Such a combination is called complimentary metal oxide semiconductors (CMOS). 

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