Thin-film capacitors for

Applications for nanocomposites include thin-film capacitors for computer chips. Thin film capacitors are electrical capacitors with an insulating film as the dielectric, combined with paper as carrier of the electrodes. The dielectric thin films are provided with electrodes. The electrodes of film capacitors may be metalized with aluminium or zinc applied directly to the surface of the plastic film. Two of these conductive layers are wound into a cylinder-shaped winding, layered as multiple single layers stacked together, to form a capacitor body. Film capacitor has very low ohmic losses and a very low parasitic inductance, which makes it suitable for AC power applications. 

Thin-film capacitors for computer chips Solid polymer electrolytes for batteries Automotive engine parts and fuel tanks Impellers and blades Oxygen and gas barriers Food packaging... 

BiaxiaHy orieated PPS film is transpareat and nearly colorless. It has low permeability to water vapor, carbon dioxide, and oxygen. PPS film has a low coefficient of hygroscopic expansion and a low dissipation factor, making it a candidate material for information storage devices and for thin-film capacitors. Chemical and thermal stability of PPS film derives from inherent resia properties. PPS films exposed to tolueae or chloroform for 8 weeks retaia 75% of theh original streagth. The UL temperature iadex rating of PPS film is 160°C for mechanical appHcatioas and 180°C for electrical appHcations. Table 9 summarizes the properties of PPS film. 

Numerous uses for PZT/PLZT thin films are under investigation. The device that, as of this writing, is closest to commercialization is a nonvolatile memory. This device, which utilizes a ferroelectric thin-film capacitor integrated onto siUcon circuitry, provides memory retention when the power is off because of the polarization retention of the ferroelectric capacitor. One and zero memory states arise from the two polarization states, — and +F, of the ferroelectric. Because PZT is radiation-hard, the devices are also of interest for military and space appHcations. 

Aluminum metallization in combination with tantalum thin films is used for manufacturing thin-film capacitors built into the metallization pattern.340... 

Thin-film dielectrics (Ba0 92Ca108)(Ti0 92Zr0 08)O3 for the thin-film capacitors were prepared using Ba, Ca, and Zr ethoxides and Ti isopropoxide in refluxed methoxyethanol solutions as precursors. Films were deposited on a usual platinized Si substrate. Crystalline thin films after heat treatment at 800°C demonstrated dielectric permittivity of 1200, dielectric loss of0.5%, nonlinear coefficient a = 0.92, and break-down voltage of980 V [1595],... 

In the case of dynamic random access memories (DRAMs) the cell is a thin film capacitor. The state of the cell ( 0 or T ) is read by the current pulse following an addressing voltage pulse. Because the charge stored in the capacitor leaks away in time (z = RC) then, for the information to be retained it must be periodically refreshed, the rate of leakage determining the necessary refresh interval. 

Polyimides are high-performance polymers, mainly used as films and as substrates for flexible printed circuits, bar code labels, and transformer and capacitor insulation. The rigid structure is responsible for a Tg greater than 300 °C. Since Kapton is flexible, lightweight and withstands very low and very high temperatures, it is an important aerospace material. Potential uses include as a thin film absorber for solar cells114. 

In addition to the multilevel metallization and formation of interconnects, anodic processing of A1 was employed for the fabrication of integrated passive components thin film capacitors and inductors.56,57 For example, localized porous-type anodization of A1 films was used to convert 20- am-thick A1 to the dielectric layer of porous AI2O3 and to define metal-dielectric-metal structures.56 The... 

Titanium(III) oxide is made by reducing Ti02 with Ti at high temperatures it is a purple-black, insoluble solid with the corundum structure (see Section 12.7) and exhibits a transition from semiconductor to metallic character on heating above 470 K or doping with, for example, V(III). Uses of Ti203 include those in thin film capacitors. 

Also of significant interest are ferroelectric oxides. Ferroelectrics such as PbZrTiO (PZT) are useful in permanent memories. Ferroelectrics also are under development in capacitor and display applications. Ferroelectrics surpass SMO thin film applications for the immediate future. In fact, ferroelectrics are being produced in the 150 mm diameter range. 

Chemical and physical processing techniques for ferroelectric thin films have undergone explosive advancement in the past few years (see Ref. 1, for example). The use of PZT (PbZri- cTi c03) family ferroelectrics in the nonvolatile and dynamic random access memory applications present potentially large markets [2]. Other thin-film devices based on a wide variety of ferroelectrics have also been explored. These include multilayer thin-film capacitors [3], piezoelectric or electroacoustic transducer and piezoelectric actuators [4-6], piezoelectric ultrasonic micromotors [7], high-frequency surface acoustic devices [8,9], pyroelectric intrared (IR) detectors [10-12], ferroelectric/photoconduc-tive displays [13], electrooptic waveguide devices or optical modulators [14], and ferroelectric gate and metal/insulator/semiconductor transistor (MIST) devices [15,16]. 

The main commercial use of solid SiO is as a vapor-deposition material for the production of SiOx thin films for optical or electronic applications (antireflective coatings, interference filters, beam-splitters, decorative coatings, dielectric layers, isolation layers, electrodes, thin-film capacitors, thin-film transistors, etc.), for diffusion barrier layers on polymer foils or for surface protection layers.Other uses for SiO have been proposed, such as the substitution of elemental silicon in the Muller-Rochow process for the production of organosilicon halides, because solid SiO can be produced at lower temperatures than elemental silicon. 

Colla, E.L., Taylor, D.V., Tagantsev, A.K., and Setter, N. (1998) Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)03 thin film capacitors with Pt electrodes. Appl. Phys. Lett., 72 (19), 2478-2480. 

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