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Integrating capacitor

Integrating capacitor in PXQ, 256 Integrating detectors, 43, 44 Intensifying screens, 12, 13, 44... [Pg.346]

Figure 5.8 Typical planar resonators being used as building blocks for filters lumped element (a), microstrip (b), folded microstrip with integrated capacitors (c), coplanar (d), and 2-D microstrip resonator. Omitting the capacitive gap in the folded microstrip design (c) leads to a ring resonator (square if circular shaped), which also represents a quite commonly used microstrip resonator design. Figure 5.8 Typical planar resonators being used as building blocks for filters lumped element (a), microstrip (b), folded microstrip with integrated capacitors (c), coplanar (d), and 2-D microstrip resonator. Omitting the capacitive gap in the folded microstrip design (c) leads to a ring resonator (square if circular shaped), which also represents a quite commonly used microstrip resonator design.
A scheme of a typical memory cell of an integrated 32 Mbit Chain FeRAM device is shown in Figure 17.2 [2], Here the cell capacitor has an area of 0.49 /nm2, but sizes down to 0.09 /nm2 for integrated capacitor area used in devices. The fabrication of these devices can only be done by memory manufacturers since the whole processing has to be performed, including CMOS, ferroelectric capacitor and electrodes, and metalization to get a functional device. To perform measurements on these capacitors, the device must have the possibility to access their bottom and top electrodes, e.g. through the CMOS circuit or through additional contact pads. [Pg.329]

The dual-slope method has a number of important features. Conversion accuracy is independent of the effect of temperature or aging on the clock frequency and integrating capacitor value, since they need to remain stable only during a conversion cycle. Accuracy... [Pg.548]

On the other hand, there are applications shown in Figure 27.1 that are not effectively met by CSD. For example, integrated capacitors for dynamic random access memory (DRAM) node elements require a much higher capacitance density, extremely small lateral dimensions, and three-dimensional architectures. For... [Pg.530]

Windlass, H., Raj, P.M., Balaraman, D., Bhattacharya, S.K., and Tummala, R.R., Colloidal processing of polymer ceramic nanocomposites for integral capacitors, in Proceedings of the International Symposium on Advanced Packing Materials Processes, Properties, and Interfaces, IEEE, Piscataway, NJ, 2001. [Pg.681]

Finally the proof-mass potential is raised to Vstep (Fig. 6.1.15c). Only a mismatch of the sense capacitors (or other mismatch in the circuit, e.g., between the integrating capacitors) results in a non-zero differential output voltage AV0. Note, however, that for identical sense capacitors the output is zero, as is required. Thermal noise sampled onto Cs and Qnt is effectively cancelled. [Pg.254]

Jordan, B. A. and R. L. Spyker. 2000. Integrated capacitor and converter package. 15th Annual IEEE Applied Power Electronics Conference and Exposition, New Orleans. [Pg.333]

TABLE 4.2 Dielectric Material Candidates tor Application in Integrated Capacitors... [Pg.97]

Ramajo LA, Reboredo MM, Castro MS (2007) Characterisation of epoxy/BaTi03 composites processed by dipping for integral capacitor films (ICF). J Mater Sci 42 3685... [Pg.158]

CDS eliminates the random offset produced by reset of the capacitive elements (integration capacitor and the detector) as well as MOSFET threshold drift (since it is slow compared to the integration time). [Pg.204]

The DI circuit (lower left block of Figures 7.16, and 7.18) has three circuit components plus the detector. The integration capacitor is reset to a low voltage after the signal is read to the column. The input ttansistor, in a common gate configuration, keeps the detector bias at approximately one MOSFET threshold drop above the input bias is adjusted to keep the detector in reverse bias. The output of the unit cell... [Pg.218]

The photon current is provided with two paths off the input node one path (discussed above) is through the input transistor and onto the integration capacitor at the output node. The second path is through the detector itself a detector with a sufficiently low dynamic resistance actually shunts the signal current. We use the injection efficiency n to quantify this = n /photon- high input current levels, the input... [Pg.218]


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See also in sourсe #XX -- [ Pg.210 ]




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