Nonvolatile memory

PT, PZT, PLZT nonvolatile memory, ir, pyroelectric detectors, electro—optic waveguide, and spatial light modulators sol—gel, sputtering... 

Numerous uses for PZT/PLZT thin films are under investigation. The device that, as of this writing, is closest to commercialization is a nonvolatile memory. This device, which utilizes a ferroelectric thin-film capacitor integrated onto siUcon circuitry, provides memory retention when the power is off because of the polarization retention of the ferroelectric capacitor. One and zero memory states arise from the two polarization states, — and +F, of the ferroelectric. Because PZT is radiation-hard, the devices are also of interest for military and space appHcations. 

Memory) (128 KB) on the MIMOSII electronics board. Firmware parameters and the instrument logbook are stored in the nonvolatile memory ferroelectric RAM (FRAM) on the electronics board. There are three individual FRAMs on the MIMOS II electronics board with three identical copies of these parameters to ensure parameter integrity. The copies are compared with each other from time to time to verify that they are identical. If one copy deviates from the other two, it is replaced by a copy of the other two identical parameter sets. All parameters can be adjusted during mission operations. 

Duan, X. Huang, Y. Leiber, C. M. 2002. Nonvolatile memory and programmable logic from molecule-gated nanowires. Nano Lett. 2 487-490. 

Nonvolatile memory (NVM), silicon-based semiconductors in, 22 257-258 Nonvolatile methylene chloride extract (NVMCE), 23 158... 

Volatile and nonvolatile memory modules that were capable of storing chromatograms for playback and reintegration... 

Magnetic random-access memory (MRAM) is a new type of computer memory. MRAMs retain their state of magnetization even with the power off, but unlike present forms of nonvolatile memory, they have switching and rewritability rates that challenge (are faster than) those of conventional RAM. In today s read heads as well as those of MRAMs, key features are made of ferromagnetic metallic alloys. Such metal-based devices make up the first—and most mature—of the various categories of spintronics. 

Lai YS, Tu CH, Kwong DL, Chen JS (2005) Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. Appl Phys Lett 87 (12) 122101-122103... 

Recently, ferroelectric materials, especially in thin film form, have attracted the attention of many researchers. Their large dielectric constants make them suitable as dielectric layers of microcapacitors in microelectronics. They are also investigated for application in nonvolatile memory using the switchable dielectric polarization of ferroelectric material. To characterize such ferroelectric materials, a high-resolution tool is required for observing the microscopic distribution of remanent (or spontaneous) polarization of ferroelectric materials. 

The presence of the only one and removable hard disk was requested by decision of Conference of the State Parties on its first session (3). In Attachment 6 of the decision 71 concerning specific operational requirements for GC/MS system, it says that all data in nonvolatile memory must be retainable at the inspected site under joint custody of the Technical Secretariat (TS) and the inspected State Party. The hard disk with all raw data may be considered as containing highly protected information and requested to be left on site of inspection. 

Layers Typical materials for which CMP processes originally have been developed for microelectronic applications include various types of silicon dioxide such as thermal oxide, TEOS, HDP, BPSG, and other B- or P-doped oxide films. These films are used for various isolation purposes including interlevel dielectric (ILD), intermetal dielectric (IMD), or shallow trench isolation (STI). In addition, n- or p-doped poly-Si, which is a semiconducting material used as capacitor electrode material for DRAMS or gate electrode for MOS applications (CMOS as well as power MOS devices), also has to be polished. Metals for which CMP processes have emerged over the last 10-15 years are W for vertical interconnects (vias) and most importantly Cu as a low-resistivity replacement for aluminum interconnects, employed in the damascene or dual-damascene processing scheme. Other metals that are required for future nonvolatile memories are noble metals like Pt or Ir for which CMP processes have been explored. 

CMOS Acronym for Complementary Metal Oxide Semiconductor. An area of nonvolatile memory that contains settings that determine how a computer is... 

Recently, efforts have been devoted to the fabrication and characterization of PbZri- Ti c03 family thin films for their potential applications in nonvolatile memory devices (See Ref. 17, for example). Partly because of the convenient stoichiometry control during processing, it was found that chemical methods, such as sol-gel and metal organic decomposition (MOD), are superior to physical means in many aspects. To appreciate better the science and technology of ferroelectric thin-film fabrication, it is important to give a brief account of the past efforts and the present status and, it is hoped, shed some light on the future. 

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