Sputtering, chemical

Si02, BaTiO capacitors sol—gel, sputtering, chemical vapor deposition (CVD)... 

Characteristic Evaporation Ion plating Sputtering Chemical vapor deposition Electro- dep 0 sitio n Thermal spraying... 

The synthesis of MNCGs can be obtained by sol-gel, sputtering, chemical vapor-deposition techniques. Ion implantation of metal or semiconductor ions into glass has been explored since the last decade as a useful technique to produce nanocomposite materials in which nanometer sized metal or semiconductor particles are embedded in dielectric matrices [1,2,4,23-29]. Furthermore, ion implantation has been used as the first step of combined methodologies that involve other treatments such as thermal annealing in controlled atmosphere, laser, or ion irradiation [30-32]. 

Some of the technological areas in which means and methods of electrochemical deposition constitute an essential component are all aspects of electronics—macro and micro, optics, optoelectronics, and sensors of most types, to name only a few. In addition, a number of key industries, such as the automobile industry, adopt the methods even when other methods, such as evaporation, sputtering, chemical vapor deposition (CVD), and the like, are an option. That is so for reasons of economy and/or convenience. 

A practical problem is that the sputtered chemical complexes often exhibit only a transitory existence. Traditional mass spectrometric techniques provide information on gross removal but little understanding of the mechanism involved. Data requirements in this area include gross removal rates, nature of ejected species, and changes to surface stoichiometry. In Sect. 6.5.1., the influence of surface chemistry on the nature of the sputtered species, and in particular on secondary ion fractions will be discussed. The role of surface chemistry and surface modification procedures on impurity control will be elucidated there. 

ZnO thin films can be prepared by a variety of techniques such as magnetron sputtering, chemical vapor deposition, pulsed-laser deposition, molecular beam epitaxy, spray-pyrolysis, and (electro-)chemical deposition [24,74]. In this book, sputtering (Chap. 5), chemical vapor deposition (Chap. 6), and pulsed-laser deposition (Chap. 7) are described in detail, since these methods lead to the best ZnO films concerning high conductivity and transparency. The first two methods allow also large area depositions making them the industrially most advanced deposition techniques for ZnO. ZnO films easily crystallize, which is different for instance compared with ITO films that can... 

These films have been produced by sputtering, chemical vapor deposition, and vacuum evaporation. The sol-gel method has also received some attention as a way to prepare these films because of its low cost. But these film preparation methods have disadvantages, such as a need for vacuum equipment and high-temperature heat treatment, and difficulties in coating large areas. 

A pulsed plasma has been used to prepare pinhole-free films from relatively nontoxic N vinylpyrrolidone.323 The pulsing reduced fragmentation of the monomer and cross-linking. This method should be tried with other monomers. Plasmas are often used for the modification of polymer surfaces.324 These methods are relatively rapid and use no solvent. Decorative coatings of TiN and other inorganic compounds can be applied to metals and other inorganic substrates by sputtering, chemical vapor deposition, plasmas, and such, as described in Chap. 4.325... 

In thin-film technology (layer thickness <1 pm), a microporous platinum layer is deposited on the already fired ceramic by thermal evaporation, sputtering, chemical vapor deposition, or electrolytic or electroless deposition. The microporosity of the thin electrode provides sufficient access of the exhaust gas to the three-phase boundary. 

These are produced by several conversion processes (evaporation, sputtering, chemical plasma deposition). Evaporation is the same method as that used to create metallisation using aluminium. A material is heated in a crucible by either a resistive heat or an electron beam gun (hence the name electron beam deposition), whereby the material evaporates and subsequently condenses on a chilled film in a vacuum chamber. In the case of Sit), coatings, the aluminium used in metallisation is replaced by SiO/Si02. 

The processes in the case of sputtering chemical compounds, such as oxides, are more complex than those of metals. As already mentioned, the impact energy often causes dissociation of chemical compounds, releases oxygen from oxides, and thus considerably alters the composition of the target, and the sputtered species may contain variable amounts of molecular fragments. 

PZT films can be prepared using physical vapor deposition (PVD) methods such as sputtering, chemical vapor... 

Chemical methods of material processing were known for years, existing in parallel with physical and other methods of film deposition. Recent advances in electron microscopy and scanning nanoprobe microscopy (STM, ATM) have revealed that some of the materials produced by the chemical methods have distinctive nanocrystalline structure. Furthermore, due to the achievements of colloid chemistry in the last 20 years, a large variety of colloid nanoparticles have become available for film deposition. This has stimulated great interest in further development of chemical methods as cost-effective alternatives to such physical methods as thermal evaporation magnetron sputtering chemical and physical vapor deposition (CVD, PVD) and molecular beam epitaxy (MBE). 

Amorphous silicon nitride (a-Si3N4) is used extensively in the microelectronics industry in the form of thin films, which are prepared by both normal and reactive sputtering, chemical vapor deposition (CVD), ion-beam-assisted deposition, and ion... 

An ideahzed metal oxide surface is shown in Fig. 1, where the metal atoms are in tetrahedral coordination with four oxygen atoms. This metal oxide, empirical formula MOjc, is stoichiometric, having no defects or surface hydrolysis products, and can be considered as a typical platform for understanding the modification of most TCO thin film materials of electrochemical interest. TCO films are typically deposited by sputtering, chemical vapor deposition, or pulsed laser deposition, and tend to be microcrystalline whose dominant exposed faces tend to be either (111) or 100>... 

Ceramic materials such as Si3N4 [50] or TiN [51] can be coated with p-BN by plasma-enhanced or sputter chemical vapor deposition (CVD), or diamond coatings (by excited CVD) can be doped with boron upon admixture of B2H6 to the CH4/H2 plasma [52]. See Section 4.1.1.2.3, p. 13, for hard boron nitride coatings. 

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