Boron doping with

Zinc—bromine storage batteries (qv) are under development as load-leveling devices in electric utilities (64). Photovoltaic batteries have been made of selenium or boron doped with bromine. Graphite fibers and certain polymers can be made electrically conductive by being doped with bromine. Bromine is used in quartz—haUde light bulbs. Bromine is used to etch aluminum, copper, and semi-conductors. Bromine and its salts are known to recover gold and other precious metals from their ores. Bromine can be used to desulfurize fine coal (see Coal conversion processes). Table 5 shows estimates of the primary uses of bromine. 

Using lAD instead of CVD allows deposition of conformal epitaxial layers, i.e., the epitaxial layer follows the surface structure leading to so-called waffle solar cells. The porous Si wafer was heated at 850 °C for 10 min to remove the native oxide but keep the porous structure. The deposition temperature with 700 °C up to 850 °C was much lower than that of the APCVD and LPE. Typical deposition rates were 0.1 m/min, and the highest rate achieved with that set up was 0.3 pm/min (Brendel 2003). The epitaxial Si layer was Ga doped with 2x16 cm and showed a Hall mobility measured by the van der Pauw geometry of 275 cm V s But also the boron doping with lAD was reported (Oberbeck et al. 2001). 

Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. 

Historically, SOG techniques have been used the most for IMD fabrication, but TEOS/o2one (TEOS/O ) processes are more recent developments that have been increasing in popularity based on excellent step coverage and void-free characteristics. TEOS/O doped with boron and phosphoms (BPTEOS/O ) has replaced BPSG in small-scale devices, and has been used successfully in 4- and 16-Mb DRAM production (16). 

When a sibcon crystal is doped with atoms of elements having a valence of less than four, eg, boron or gallium (valence = 3), only three of the four covalent bonds of the adjacent sibcon atoms are occupied. The vacancy at an unoccupied covalent bond constitutes a hole. Dopants that contribute holes, which in turn act like positive charge carriers, are acceptor dopants and the resulting crystal is -type (positive) sibcon (Fig. Id). 

Electrical and Electronic. Diamond is an electrical insulator (-- lO H/cm) unless doped with boron when it becomes ap-ty e semiconductor with a resistivity in the range of 10 to 100 Q/cm. n-Ty e doping has often been claimed but is less certainly estabUshed. The dielectric constant of diamond is 5.58. 

Chemical erosion can be suppressed by doping with substitutional elements such as boron. This is demonstrated in Fig. 14 [47] which shows data for undoped pyrolitic graphite and several grades of boron doped graphite. The mechanism responsible for this suppression may include the reduced chemical activity of the boronized material, as demonstrated by the increased oxidation resistance of B doped carbons [48] or the suppressed diffusion caused by the interstitial trapping at boron sites. 

Color colorless to yellow if pure, brown if doped with boron, nitrogen or aluininum X-ray Density (g/cm3) 3.214 Melting Point 2545°C at 1 atm. 2830°C at 35 atm. 

As is well known, many experimental smdies have been made extensively to search for a possibility of encapsulation of atoms by hollow fullerenes since the discovery of Cgo by Kroto et al. [143]. These methods, however, usually require high tempratures and high pressures, or ion implantation. The yields are also as low as 0.4—10 %. In this sense, the efficiency in our case is much higher and the required conditions are much milder with collison energy of 2 eV. However, the boron substimtion is a bottle neck, although Smalley and co-workers successfully synthesized boron-doped fullerenes [144]. 

Silicon s atomic structure makes it an extremely important semiconductor. Highly purified silicon, doped with such elements as boron, phosphorus, and arsenic, is the basic material used in computer chips, transistors, sUicon diodes, and various other electronic circuits and electrical-current switching devices. Silicon of lesser purity is used in metallurgy as a reducing agent and as an alloying element in steel, brass, and bronze. 

This contribution Is concerned with the magnetic and Mossbauer characterization of (a) Fe/zeollte (mordenlte) systems, and that of (b) Fe and/or Ru on boron-doped carbon substrates. Some correlations between the characterization and CO hydrogenation parameters will be pointed out. Because of limitations of space, we shall present salient features of these Investigations. At the outset. It would be befitting to present a succinct background on the basic principles of magnetic and Mossbauer characterization. 

This work is based on the doctoral thesis of Prasad Rao [8] it stemmed from the early work of Santiago, Mulay et al. (Cf. ref. 2a). Amorphous (disordered) carbons (Cabot Co. s Monarch 700, CSX-203, etc.) were used after appropriate desulfurization. Some of these carbons were graphitlzed at high temperatures (2773 K). The above CMC samples were doped with boron in the range from 170 to 260 ppm. 

The CMC and boronated samples showed a Landau diamagnetism which changed over to almost the Langevln diamagnetism with progressive boron doping (8). The results were Interpreted in terms of the equation... 

Further studies by this group centered on comparisons of the overoxidation resistance limit (ORL) of polypyrrole materials doped with monoanionic borane clusters [B12H11NH3] or dianionic borane [B12H12]2 or carborane [Co(C2B9Hu)2]2-clusters. The monoanionic boron clusters were found to offer the highest stability to the PPy doped materials against overoxidation than any other charged dopant. They were also found to be far superior to the dianionic clusters in their ability to impart an ORL rise.140... 

Balducci, G., Fornasiero, P., Tondello, E., and Graziani, M. (2007) Ti02nanopowders doped with boron andnitrogen for photocatalytic applications. Chemical Physics, 339 (1-3), 111-123. 

Bettinelli, M., Dallacasa, V., Falcomer, D., Fornasiero, P., Gombac, V., Montini, T., Romano, L., and Speghini, A. (2007) Photocatalytic activity of Ti02 doped with boron and vanadium. Journal of Hazardous materials, 146 (3), 529-534. 

Couto et al. [11] developed a flow injection system with potentiometric detection for determination of TC, OTC, and CTC in pharmaceutical products. A homogeneous crystalline CuS/Ag2S double membrane tubular electrode was used to monitor the Cu(II) decrease due to its complexation with OTC. The system allows OTC determination within a 49.1 1.9 x 103 ppm and a precision better than 0.4%. A flow injection method for the assay of OTC, TC, and CTC in pharmaceutical formulations was also developed by Wangfuengkanagul et al. [12] using electrochemical detection at anodized boron-doped diamond thin-film electrode. The detection limit was found to be 10 nM (signal-to-noise ratio = 3). 

Wangfuengkanagul and Chailapakul [9] described the electroanalysis of ( -penicillamine at a boron-doped diamond thin film (BDD) electrode using cyclic voltammetry. The BDD electrode exhibited a well-resolved and irreversible oxidation voltammogram, and provided a linear dynamic range from 0.5 to 10 mM with a detection limit of 25 pM in voltammetric measurement. In addition, penicillamine has been studied by hydrodynamic voltammetry and flow injection analysis with amperometric detection using the BDD electrode. 

For the electrochemical capacitors of Carbon-Ni Oxide system with aqueous KOH solution it is expedient to use carbonaceous graphite materials with expanded structure and modified surface. The best results were achieved with carbon surface doped with Boron, which makes this carbon superior than other conductive additives used in this study, due to its... 

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