Sputtering, RF magnetron

A more advanced sputtering technique utilizes ECR source to supply the power to the plasma. The advantage of the ECR sputtering system is that it enables the production of highly ionized plasma under low gas pressures. The ZnO films 

Annealing temperature (°C) rms Surlxe roughness (nm) XRD (0002) FWHM (arcmin) 10KPL FWHM (meV) 

5 Vapor Phase Deposition of Cubic Boron Nitride Films 

The charge carrier density in the magnetron plasma was measured by Langmuir probe measurements [61]. As an example, in Fig. 12 the distribution of the charge carrier density is presented which had been measured 10 mm in front of the substrate. Because the charge carrier density at the plasma sheath is directly related to the ion current towards the substrate (see below), the inhomogeneity visible in Fig. 12 will be reproduced in the ion flux towards the substrate, that is, the ion 

Interestingly, a similar nucleation effect as found for the ion impact seems to exist in the case of the substrate temperature. As has been found by several authors [34,36] a minimum substrate temperature of 150°C is necessary in order to nucleate cubic BN in ion-assisted deposition. However, very recently Feldermann et al. [71] have found for mass selected ion beam deposition that switching off the substrate heating after cBN nucleation and allowing the substrate to cool down to room temperature, does not interrupt cBN growth. 

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Yabuta, H. Sano, M. Abe, K. Aiba, T. Den, T. Kumomi, H. Nomura, K. Kamiya, T. Hosono, H. 2006. High-mobility thin-film transistor with amorphous InGaZn04 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89 112123/1-112123/3. 

Nagata A and Okayama H. Characterization of solid oxide fuel cell device having a three-layer film structure grown by RF magnetron sputtering. Vacuum 2002 66 523-529. 

I. Baia, M. Quintela, L. Mendes, P. Nunes, and R. Martins, Performances exhibited by large area ITO layers produced by rf magnetron sputtering, Thin Solid Films, 337 171-175, 1999. 

P.F. Carcia, R.S. Mclean, M.H. Reilly, Z.G. Li, L.J. Pillione, and R.F. Messier, Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates, Appl. Phys. Lett., 81 1800-1802, 2002. 

This chapter examines the deposition of fluorinated polymers using plasma-assisted physical vapor deposition. Ultrathin coatings, between 20 and 5000 nm have been produced, using RF magnetron sputtering. The method of coating, fabrication, and deposition conditions are described. 

Over the last decade, selected papers1114 have examined the deposition of fluoropolymers, using RF magnetron sputtering. All of these papers have examined the deposition of PTFE, with some of them2314 also studying the deposition of polyimide (PI) films. This chapter extends these studies and will report on the sputter deposition behavior of PTFE (polytetrafluoroethylene), PVDF (polyvinylidenefluoride), and FEP (fluorinated ethylene propylene copolymer) films. 

This work has shown that PTFE films can be deposited using RF magnetron sputtering over a range of deposition conditions, with power densities varying from 0.3 to 1.13 W/cm2. In all cases adherent films were produced showing no delamination even after extended exposure times (out to 16,000 h). The rate of deposition was found to increase in a near linear manner with deposition power, as can be seen in Figure 19.2. 

Rapid solidification and devitrification of amorphous metals and metallic glasses Combustion-flame chemical vapor condensation processes (Kear) Induction-heating chemical vapor condensation processes DC and RF magnetron sputtering, inclusive of the method of thermalization Laser ablation methods Supercritical fluid processing... 

Fig. 11.3 (a) An rf-magnetron sputter technique with automated target... 

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