Silicon monoliths

J Jung, et al, Ultra-wideband low noise amplifier using a cascode feedback topology , IEEE Silicon Monolithic Integrated Circuits in RF Systems, 2006 Digest of Papers. 2006 Topical, 202-205. 

For driving matrix liquid crystal display panels, the silicon metal-oxide semiconductor field effect transistor (MOSFET) fabricated on a silicon monolithic wafer has been investigated by several groups [134-150]. The MOS transistor circuit fabrication techniques are well developed and have been used to produce various LSI devices. A dynamic scattering mode, a planar type GH mode or a polymer dispersed (PD) mode are used in these displays because the silicon wafer is intrinsically opaque. The circuit configuration of the panel is essentially the same as that of the p-Si TFT switch matrix addressed liquid crystal display panel as shown its equivalent circuit in Fig. 18(a). 

M. D. Feuer, and W. L. Wilson, Prospects for silicon monolithic opto-electronics with polymer light-emitting diodes, J. Lightwave Technol. 72 2114 (1994). 

Hayase, G., Kanamori, K., Hasegawa, G., Maeno, A., Kaji, H., and Nakanishi, K. (2013) A superamphiphobic macroporous silicone monolith with marshmallow-like flexibility. Angew. Chem., Int. Ed., 52, 10788-10791. 

Creep Resistsince. Studies on creep resistance of particulate reinforced composites seem to indicate that such composites are less creep resistant than are monolithic matrices. Silicon nitride reinforced with 40 vol % TiN has been found to have a higher creep rate and a reduced creep strength compared to that of unreinforced silicon nitride. Further reduction in properties have been observed with an increase in the volume fraction of particles and a decrease in the particle size (20). Similar results have been found for SiC particulate reinforced silicon nitride (64). Poor creep behavior has been attributed to the presence of glassy phases in the composite, and removal of these from the microstmcture may improve the high temperature mechanical properties (64). 

Chemical vapor deposition (C VD) is a versatile process suitable for the manufacturing of coatings, powders, fibers, and monolithic components. With CVD, it is possible to produce most metals, many nonmetallic elements such as carbon and silicon as well as a large number of compounds including carbides, nitrides, oxides, intermetallics, and many others. This technology is now an essential factor in the manufacture of semiconductors and other electronic components, in the coating of tools, bearings, and other wear-resistant parts and in many optical, optoelectronic and corrosion applications. The market for CVD products in the U.S. and abroad is expected to reach several billions dollars by the end of the century. 

In this particular example as in many others, a proper analysis of cost is a crucial factor. An example is the production of balls for ball bearings. Coated ball bearings (or monolithic silicon nitride) greatly outperform steel balls but their cost is considerably higher. Steel balls in passenger-automobile applications are satisfactory and normally last the life of the car and the far-longer life of the ceramic balls is not needed. 

In a case where a fiune hood was to be placed on a portion of counter faced with plastic laminate, the planner found an economical solution. Since the plastic laminate was not suitable for use with a fume hood, he ordered a sheet of monolithic material Va inch thick and had it cut to the exact dimensions of the hood. The cost was just a fraction of that of a full thickness top. The sheet was put in place and the edges were treated with a silicone compound. This treatment stood up against highly corrosive materials as weU as heat for many years. 

An integrated circuit (IC) is a monolithic assembly of electrically isolated circuit elements. What this means is that each circuit element is formed on top of, or beneath, other circuit elements to form a compact assembly. Each conductive layer is separated by a non-conducting layer, usually composed of an oxide such as silicon dioxide, Si02- The assembly includes... 

Figure 3.5. Schematic representation of the ROTACAT concept a homogeneous complex, immobilised on monoliths, and the implementation of these monoliths in the blades of a mechanical stirrer. Inset a picture of the stirrer with a silicon-carbide monolith...

Tseng, Y.-C. Xuan, P. Javey, A. Malloy, R. Wang, Q. Bokor, J. Dai, H. 2004. Monolithic integration of carbon nanotube devices with silicon MOS technology. Nano Lett. 4 123-127. 

A cross-sectional schematic of a monolithic gas sensor system featuring a microhotplate is shown in Fig. 2.2. Its fabrication relies on an industrial CMOS-process with subsequent micromachining steps. Diverse thin-film layers, which can be used for electrical insulation and passivation, are available in the CMOS-process. They are denoted dielectric layers and include several silicon-oxide layers such as the thermal field oxide, the contact oxide and the intermetal oxide as well as a silicon-nitride layer that serves as passivation. All these materials exhibit a characteristically low thermal conductivity, so that a membrane, which consists of only the dielectric layers, provides excellent thermal insulation between the bulk-silicon chip and a heated area. The heated area features a resistive heater, a temperature sensor, and the electrodes that contact the deposited sensitive metal oxide. An additional temperature sensor is integrated close to the circuitry on the bulk chip to monitor the overall chip temperature. The membrane is released by etching away the silicon underneath the dielectric layers. Depending on the micromachining procedure, it is possible to leave a silicon island underneath the heated area. Such an island can serve as a heat spreader and also mechanically stabihzes the membrane. The fabrication process will be explained in more detail in Chap 4. 

Fig. 5 Relationship between the amount of graft polymers and Mn of free polymers. The graft polymerization was carried out under various conditions on silicon wafer (squares), silica particles with varying diameter (d = 12, 130, 290, 740, 1550 nm) (circles), and silica monolith with 50-nm mesopores (triangles). Two types of immobilized initiators, 2 and 5 (n = 6 and R" = CH3) in Fig. 2, two types of copper halides, CuBr and CnCl, and two types of ligands, spartein (Sp) and dipyridyl derivatives (4,4 -diheptyl-2,2 -dipyridyl (dHbipy) and 4,4 -dinonyl-2,2 -dipyridyl (dNbipy)), were used...

Brown, D. M., et al., High Temperature Silicon Carbide Planar IC Technology and First Monolithic SiC Operational Amplifier IC, Trans, of 2nd Inti. High-Temp. Elec. Conf. (HiTEC), 1994, pp. XI-17-XI-22. 

Because of technical constraints (several HT samples cannot be cut into 4 cm2 monoliths, due to their granular nature), the MCC-1 test could not be performed with our set of samples. Nevertheless, the normalized apparent dissolution rates of HT materials (r(glass)noll ), approximated as the release rates of silicon (r(Si)norm) obtained by the Strasbourg test (100-125 pm powdered samples), are also shown on Fig. 13 for comparative puiposes. Although not identical, the MCC-1 test and the Strasbourg test can at least be related in terms of their matching efficiencies ( HTmaterial/Eleachant) X corrosion 2.8 day/... 

It can now be said that the microemulsion-mediated silicon alkoxide sol-gel process has come of age. The ability to form monodisperse spherical silica particles (20-39) and monolithic gels (40-53) by this method has been amply demonstrated. Recipes are available to prepare materials with predetermined characteristics, especially particle size and polydispersity. Potential applications of these microemulsion-derived... 

As observed by D. Johnson and J. Stiegler, "Polymer-precursor routes lor fabricating ceramics offer one potential means or producing reliable, cost-effective ceramics. Pyrolysis of polymeric metalloorganic compounds can be used to produce a wide variety of ceramic materials." Silicon carbide and silicon oxycarbide fibers have been produced and sol gel methods have been used In prepare line oxide ceramic powders, such as spherical alumina, as well as porous and fully dense monolithic forms. 

In one application (production or aluminum beverage can lids), a monolithic silicon nitride punch has demonstrated a useful life greater than ten times that of a cemented carbide tool. 

To appreciate the rapid development of process technology, the progression of the IC industry must be considered first. (For summaries of the historical development of this field, see references 1 and 2.) A central theme in the IC industry is the simultaneous fabrication of hundreds of monolithic ICs (or chips) on a wafer (or slice) of silicon (or other material such as gallium arsenide), which is typically 100-150 mm in diameter and 0.75 mm thick. In silicon technology, chip areas generally range from a few square millimeters to over 100 mm2. A large number (often more than 100) of individual process steps, which are precisely controlled and carefully sequenced, are required for the fabrication. 

The low water absorptivity and good resistance to hydrostatic pressure make syntactic foams very useful for marine and submarine construction. Materials to be used for deep-sea application must have 1) low compressibilities at high hydrostatic pressure, 2) low thermal expansion coefficients, 3) low water absorption, and 4) good fire resistance. The fluids used for buoyancy in deep water submersibles include gasoline, ammonia, and silicone oil, while the solids include plastic, glass and aluminium foams, lithium, wood, and monolithic polyolefins. The liquids are dense but have low... 

---