Metallic microelectronics

Metal to ceramic (oxide) adhesion is very important to the microelectronics industry. An electron transfer model by Burlitch and co-workers [75] shows the importance of electron donating capability in enhancing adhesion. Their calculations are able to explain the enhancement in adhesion when a NiPt layer is added to a Pt-NiO interface. 

Equally important as tape casting in the fabrication of multilayer ceramics is thick film processing. Thick film technology is widely used in microelectronics for resistor networks, hybrid integrated circuitry, and discrete components, such as capacitors and inductors along with metallization of MLC capacitors and packages as mentioned above. 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Metal demand has an important influence on price. Both lead and gallium occur in the earth at about 0.0015 wt %. The demand for gallium (1990 U.S. consumption was 10,000 kg) is limited to optoelectronic devices and high performance microelectronics. There appears to be no need to expand supply, which would reduce price. On the other hand, reported 1990 consumption of lead in the United States was 1.25 x 10 t. Lead (qv) production is carried out on a large scale by relatively simple and efficient processes. 

Because of the high functional values that polyimides can provide, a small-scale custom synthesis by users or toU producers is often economically viable despite high cost, especially for aerospace and microelectronic appHcations. For the majority of iudustrial appHcations, the yellow color generally associated with polyimides is quite acceptable. However, transparency or low absorbance is an essential requirement iu some appHcations such as multilayer thermal iusulation blankets for satellites and protective coatings for solar cells and other space components (93). For iutedayer dielectric appHcations iu semiconductor devices, polyimides having low and controlled thermal expansion coefficients are required to match those of substrate materials such as metals, ceramics, and semiconductors usediu those devices (94). 

In the microelectronics industry, powdered metals and insulating materials that consist of noimoble metals and oxides are deposited by screen printing in order to form coatings with high resistivities and low temperature coefficients of resistance. This technique may be useful in depositing oxide—metal refractory coatings. 

Berylha ceramic parts ate frequendy used in electronic and microelectronic apphcations requiting thermal dissipation (see Ceramics as ELECTRICAL materials). Berylha substrates are commonly metallized using refractory metallizations such as molybdenum—manganese or using evaporated films of chromium, titanium, and nickel—chromium alloys. Semiconductor devices and integrated circuits (qv) can be bonded by such metallization for removal of heat. 

Dehydration The growing use of isopropanol as a clean-rinse fluid in microelectronics produces significant quantities of an 8.5-90 percent isopropanol waste. Removing the water and trace contan ii-nants is required before the alcohol can be reused. Pervaporation produces a 99.99 percent alcohol product in one step. It is subsequently polished to remove metals and organics. In Europe, dehydration or ethanol is the largest pei vaporation application. For the very large ethanol plants typical of the United States, pei vaporation is not competitive with thermally integrated distillation. 

Thin films of metals, alloys and compounds of a few micrometres diickness, which play an important part in microelectronics, can be prepared by die condensation of atomic species on an inert substrate from a gaseous phase. The source of die atoms is, in die simplest circumstances, a sample of die collision-free evaporated beam originating from an elemental substance, or a number of elementary substances, which is formed in vacuum. The condensing surface is selected and held at a pre-determined temperature, so as to affect die crystallographic form of die condensate. If diis surface is at room teiiiperamre, a polycrystalline film is usually formed. As die temperature of die surface is increased die deposit crystal size increases, and can be made practically monocrystalline at elevated temperatures. The degree of crystallinity which has been achieved can be determined by electron diffraction, while odier properties such as surface morphology and dislocation sttiicmre can be established by electron microscopy. 

Of these, the most extensive use is to identify adsorbed molecules and molecular intermediates on metal single-crystal surfaces. On these well-defined surfaces, a wealth of information can be gained about adlayers, including the nature of the surface chemical bond, molecular structural determination and geometrical orientation, evidence for surface-site specificity, and lateral (adsorbate-adsorbate) interactions. Adsorption and reaction processes in model studies relevant to heterogeneous catalysis, materials science, electrochemistry, and microelectronics device failure and fabrication have been studied by this technique. 

The chemical and electronic properties of elements at the interfaces between very thin films and bulk substrates are important in several technological areas, particularly microelectronics, sensors, catalysis, metal protection, and solar cells. To study conditions at an interface, depth profiling by ion bombardment is inadvisable, because both composition and chemical state can be altered by interaction with energetic positive ions. The normal procedure is, therefore, to start with a clean or other well-characterized substrate and deposit the thin film on to it slowly at a chosen temperature while XPS is used to monitor the composition and chemical state by recording selected characteristic spectra. The procedure continues until no further spectral changes occur, as a function of film thickness, of time elapsed since deposition, or of changes in substrate temperature. 

Crystal growth has, apart from its basic surface science interest, important applications in technology for instance in microelectronics, optoelectronics, recording... However, even the simplest case of homoepitaxy is not perfectly understood. In particular, growth on FCC (111) transition metal surfaces raises some interesting questions. 

The growing interest in volatile silyl-metal complexes for chemical vapor deposition reactions should also be mentioned. This technique is extremely useful for the preparation of silicide films in microelectronic devices. Further examples of applications of silicon-metal compounds are given in the appropriate sections. 

Microelectronic circuits for communications. Controlled permeability films for drug delivery systems. Protein-specific sensors for the monitoring of biochemical processes. Catalysts for the production of fuels and chemicals. Optical coatings for window glass. Electrodes for batteries and fuel cells. Corrosion-resistant coatings for the protection of metals and ceramics. Surface active agents, or surfactants, for use in tertiary oil recovery and the production of polymers, paper, textiles, agricultural chemicals, and cement. 

TOF-SIMS can be applied to identify a variety of molecular fragments, originating from various molecular surface contaminations. It also can be used to determine metal trace concentrations at the surface. The use of an additional high current sputter ion source allows the fast erosion of the sample. By continuously probing the surface composition at the actual crater bottom by the analytical primary ion beam, multi element depth profiles in well defined surface areas can be determined. TOF-SIMS has become an indispensable analytical technique in modem microelectronics, in particular for elemental and molecular surface mapping and for multielement shallow depth profiling. 

Wegeng et al. refer to the low-cost, mass production of microstructures from metals, ceramics, and plastics as a crucial element for widespread application [Ij. Micro technologies, they say, are generally conducive for mass production however, this has so far only been proven for the field of microelectronics. 

D microfabricated reactor devices are typically made by fabrication techniques other than stemming from microelectronics, e.g. by modern precision engineering techniques, laser ablation, wet-chemical steel etching or pEDM techniques. Besides having this origin only, these devices may also be of hybrid nature, containing parts made by the above-mentioned techniques and by microelectronic methods. Typical materials are metals, stainless steel, ceramics and polymers or, in the hybrid case, combinations of these materials. 

During recent decades, demands regarding the quality and properties of metal coatings have increased sharply. This is due, on one hand, to advances in microelectronics, and on the other hand, to increasing uses of metal parts in corrosive environments. 

Applications Real applications of spark-source MS started on an empirical basis before fundamental insights were available. SSMS is now considered obsolete in many areas, but various unique applications for a variety of biological substances and metals are reported. Usually, each application requires specific sample preparation, sparking procedure and ion detection. SSMS is now used only in a few laboratories worldwide. Spark-source mass spectrometry is still attractive for certain applications (e.g. in the microelectronics industry). This is especially so when a multi-element survey analysis is required, for which the accuracy of the technique is sufficient (generally 15-30% with calibration or within an order of magnitude without). SSMS is considered to be a... 

Metal oxides are exploited in a number of technologies including gas sensing, microelectronics, and catalysis [1, 2]. A number of oxides directly act as catalysts while many others are employed as supports on which an active metal is dispersed. As there is evidence that the oxide support influences the reactivity of the dispersed metal [3,4], understanding the behavior of oxides becomes important both when they are used as supports and when they are the active component in a catalyst. 

The method can successfully be used in analyses of impurities in metals and alloys, for estimation of minor elements in monomolecular films of oxide layers of Fe-Cr-Ni alloys, for detection of metal impurities in environmental pollution, for studying the depression of high-grade semiconducting materials and for analysis of the corrosion products of contact junction diodes used in microelectronic circuits. Much sophistication is desirable on the instrumental side so as to incorporate an automatic recording device to make an FR polarograph suitable for wider applications and common use. 

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