Polishing mechanical

At (j> the penetration depth approaches a minimum, particularly for reflective surfaces such as chemi-mechanically polished Si. Total reflection disappears on rough surfaces (Fig. 4.3). Below rj> the penetration depth is in the range of a few nanometers (Fig. 4.4). 

An ASME 2 1 elliptical heads can ensure an increase in pressure resistance of die vessel. Fermenter jackets (e.g., half-pipe, diameter, or true type) should be constructed to sustain die vessel s rated pressure and, thus, enhance its strength. The construction material is type 316L stainless steel, which features an internal mechanical-polish finish of 2B-mill or 25-Roughness Average (Ra) depending on the nature of the fermentation. 

Fig. 12.16 Increase in porosity of an electrodeposit caused by mechanical polishing. Left, 7-5/im unpolished coating right, polished with lime finishing compound. The average thickness removed by abrasian was 0-1 /im...

The CPE model has been used152,154,270-274 and it has been found that for electrochemically polished surfaces, the surface roughness is very small compared with mechanically polished surfaces. 

The impedance characteristics of pc-Pb have been obtained in aque-ous 220-221,599-607 an(j n0naqueous (glacial acetic acid, MeOH, EtOH, dimethyl formamide)10,74,608-612 surface-inactive electrolyte solutions. The first attempt to obtain the potential of zero charge of pc-Pb with a mechanically polished and remelted surface was made by Borissova et al.220,221 in 1948 and 1950. Pc-Pb anodically polished in H20 + NaF (0.001 < cNlF < 0.1 M) was studied by Rybalka and Leikis.599 The value of = -0.810 0.02 V(SCE) was found to be independent of c the... 

The data available up to 1971 have been collected by Carr et al.,m who have also reported apzc value of -0.59 0.02 V (SCE) for a melted, cut, mechanically polished, and finally electrochemically and chemically etched electrode. 

D and fractional exponent a (Table 15) show that the surface of electrochemically polished Cd electrodes is flat and free from components of pseudo-capacitance. The somewhat higher values of D for electrochemically polished high-index planes and for chemically treated electrodes indicate that the surface of these electrodes is to some extent geometrically and energetically inhomogeneous. However, the surface of chemically treated Cd electrodes, in comparison with the surface of mechanically polished or mechanically cut electrodes, is relatively... 

Researchers in Japan have determined that copper interconnects deposited by metallo-organic chemical vapor deposition (MOCVD), then followed by chemical mechanical polishing, provides sub-quarter-micron interconnects and can be achieved on a production basis. Titanium nitride and borophosphosilicate glass provide effective barriers against copper diffusion.PL[H]... 

Electric chemical polish (ECP) and electric chemical mechanical polish (ECMP) [53] have been developed as promising methods for global planarization of LSI fabrication and abrasive-free polish. 

The solid-liquid two-phase flow is widely applied in modern industry, such as chemical-mechanical polish (CMP), chemical engineering, medical engineering, bioengineering, and so on [80,81]. Many research works have been made focusing on the heat transfer or transportation of particles in the micro scale [82-88], In many applications, e.g., in CMP process of computer chips and computer hard disk, the size of solid particles in the two-phase flow becomes down to tens of nanometres from the micrometer scale, and a study on two-phase flow containing nano-particles is a new area apart from the classic hydrodynamics and traditional two-phase flow research. In such an area, the forces between particles and liquid are in micro or even to nano-Newton scale, which is far away from that in the traditional solid-liquid two-phase flow. 

Borst, C. L., Gill, W. N., and Gutmann, R. J., Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, Boston Kluwer Academic Publishers, 2002, pp. 1-5. 

Bielmann, M., Mahajan, U., and Singh, R. K., "Effect of Particle Size During Tungsten Chemical Mechanical Polishing, Electrochem. Solid-State Lett., Vol. 2,1999, pp. 401 03. 

Zhou, C. H., Shan, L., and Hight, R., "Influence of Colloidal Abrasive Size on Material Removal Rate and Surface Finish in Si02 Chemical Mechanical Polishing, Tribol. Trans., Vol. 45,2002, pp. 232-230. 

Li, S. H. and Miller, R., Chemical Mechanical Polishing in Silicon Processing, Semiconductor Semimet., Vol. 63, New York Academic Press, 2000. 

Ma, J. J., Experimental Research on Chemical Mechanical Polishing of Computer Hard Disk," Master Thesis, Tsing-hua University, Beijing, China, 2003. 

Lei, S., Mechanical Interactions at the Interface of Chemical Mechanical Polishing, Ph.D. Thesis, Georgia Institute of Technology, 2000. 

Larsen, B. J. and Liang, H., "Probable Role of Abrasion in Chemo-Mechanical Polishing of Tungsten, Wear, Vol. 233-235,1999, pp. 647-654. 

Zhao, Y., and Change, L., A Micro-Contact and Wear Model for Chemical-Mechanical Polishing, Wear, Vol. 252, 2002,... 

Asare, O. K. and Khan, A., "Chemical-Mechanical Polishing of Tungsten An Electrophoretic Mobility Investigation of Alumina-Tungstate Interactions, Electrochemical Society Proceedings,Vol.1,1998,pp. 138-144. 

Steigerwald, J., Zirpoli, R., Myrarka, S., et al., Metal Dishing and Erosion in the Chemical-Mechanical Polishing of Copper Used for Patten Delineation, Materials Research Society Symposium Proceedings, ULSI-X, 1995, pp. 55-59. 

Li, Y. and Babu, S. V, Chemical Mechanical Polishing of Copper and Tantalum in Potassium lodate-Based Slurries," Electrochem. Solid-State Lett., Vol. 4, No. 2, 2001, pp. G20-G22. 

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