Mechanical Polishing CMP

The solid-liquid two-phase flow is widely applied in modern industry, such as chemical-mechanical polish (CMP), chemical engineering, medical engineering, bioengineering, and so on [80,81]. Many research works have been made focusing on the heat transfer or transportation of particles in the micro scale [82-88], In many applications, e.g., in CMP process of computer chips and computer hard disk, the size of solid particles in the two-phase flow becomes down to tens of nanometres from the micrometer scale, and a study on two-phase flow containing nano-particles is a new area apart from the classic hydrodynamics and traditional two-phase flow research. In such an area, the forces between particles and liquid are in micro or even to nano-Newton scale, which is far away from that in the traditional solid-liquid two-phase flow. 

A. Inamdar, M. A. Fury, D. Towery, A. B. Stubbman, J. W. Zimmer, Cost of Ownership Implications of a Novel CMP Pad Conditioning Device, Third International Chemical-Mechanical Polish (CMP) for VLSI Multilevel Interconnection Conference, pp. 169-171, Feb. 19-20, 1998. 

Facilitization for chemical mechanical polishing (CMP) evokes many different images, depending on the perspective of the user. For a researcher in an R D lab with a single polisher, the image may at first seem to be simply... 

Modeling and simulation approaches for chemical mechanical polishing (CMP) are essential to support a variety of needs ranging from exploration and understanding of physical mechanisms, to process optimization, process integration, and manufacturing control of CMP. In this chapter, we focus... 

Y. Hayashide, M. Matsuura, M. Hirayama, T. Sasaki, S. Harada, and H. Kotani, A Novel Optimization Method of Chemical Mechanical Polishing (CMP), in Proc. VMIC Conf, Santa Clara, CA, pp. 464-470, June 1995. 

Bajaj, R., Desai, M., Jairath, R., Stell, M., Tolies, R. (1994). Effect of polishing pad material properties on chemical mechanical polishing (CMP) processes. Proc. MRS Spring Meeting. 

With the decrease of device dimensions, planarization of both front and back end layers by chemical mechanical polishing (CMP) now seems an absolute must for technologies smaller than 0.5 m. Unfortunately, CMP... 

Zhu H, Tessaroto LA, Sabia R, Greenhut VA, Smith M, Niesz DE. Chemical mechanical polishing (CMP) anisotropy in sapphire. Appl Surf Sci 2004 236(l-4) 120-130. 

Fu G, Chandra A, Guha S, Subhash G. A plasticity-based model of material removal in chemical-mechanical polishing (CMP). IEEE Trans Semicond Manuf 2001 14(4) 406-417. 

Kim NH, Ko PJ, Choi GW, Seo YJ, Lee WS. Chemical mechanical polishing (CMP) mechanisms of thermal Si02 film after high-temperature pad conditioning. Thin Solid Films 2006 504 166-169. 

Yuichi Y, Takaaki K, Shunichi S, Keiichi M, Yasuaki I, Shinji T, Naoki T. The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry. Mater Res Soc S5nnp Proc 2005 867 W3.5.1-W3.5.6. 

Fu G, Chandra A. A model for wafer scale variation of material removal rate in chemical mechanical polishing (CMP) based on viscoelastic pad deformation. J Electron Mater 2002 31(10) 1066-1073. 

Experimental evidence strongly suggests that material removal in chemical-mechanical polishing (CMP) processes is a result of one or more chemical steps that alter the wafer surface combined with a mechanical step that removes the altered material. Chemical action by itself also removes material by static etching, but generally at a much lower rate than is observed when mechanical action is also present. Similarly, polishing rates observed when a minimally reactive fluid such as water is used instead of slurry are also low. Both chemical and mechanical processes are therefore involved in material removal at commercially practical rates, and the model we describe reflects this dual nature of the process. 

Bu K-H, Moudgil BM. Colloidal silica based high selectivity shallow trench isolation (STI) chemical mechanical polishing (CMP) slurry. Proceedings of MRS. Symposium W. Spring 2005. 

Surya Sekhar M, Ramanathan S. Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabrication. Thin Solid Films 2006 504(l-2) 227-230. 

Davari B, Koburger CW, Schulz R, Wamock JD, Furukawa T, lost M, Taur Y, Schwittek WG, DeBrosse JK, Kerbaugh ML, Mauer JL. A new planarization technique using a combination of RIE and chemical mechanical polish (CMP). lEDM Technical Digest Dec 1989. p 61-64. 

Kang H, Katoh T, Lee M, Park H, Paik U, Park J. Effect of molecular weight of surfactant in nano ceria slurry on shallow trench isolation chemical mechanical polishing (CMP). Jpn J Appl Phys 2004 43 L1060. 

Choi W, Lee S-M, Singh R. Further investigation of effects of ph on silicon dioxide chemical mechanical polishing (CMP). The Electrochemical Society 204th Meeting 2003. 

Chandrasekaran N, Taylor T, Sabde G. Effect of ceria particle-size distribution and pressure interactions in chemo-mechanical polishing (CMP) of Dielectric Materials. Mater Res Soc Symp Proc 2003 767 F3.2. 

In this study, we have characterized the effects of abrasive properties, primarily particle size, on the Chemical Mechanical Polishing (CMP) of oxide films. Sol-gel silica particles with very narrow size distributions were used for preparing the polishing slurries. The results indicate that as particle size increases, there is a transition in the mechanism of material removal from a surface area based mechanism to an indentation-based mechanism. In addition, the surface morphology of the polished samples was characterized, with the results showing that particles larger than 0.5 im are detrimental to the quality of the Si02 surface. 

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