Copper chemical mechanical polishing

T. Park, T. Tugbawa, D. Boning, J. Chung, S. Hymes, R. Muralidhar, B. Wilks, K. Smekalin, and G. Bersuker, Electrical Characterization of Copper Chemical Mechanical Polishing, Proc. CMP-MIC, Santa Clara, CA, Feb. 1999,... 

Kao Y-C, Yu C-C, Shen S-H. Robust operation of copper chemical mechanical polishing. Microelectr. Eng 2003 65 61-75. 

Wang MT, Tsai MS, Liu C, Tseng WT, Chang TC, Chen LJ, Chen MC. Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing. Thin Solid Films 1997 518 308. 

Tsai T-H, Yen S-C. Localized corrosion effects and modifications of acidic and alkaline slurries on copper chemical mechanical polishing. Appl Surf Sci 2003 210(3-4) 190. 

Surya Sekhar M, Ramanathan S. Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabrication. Thin Solid Films 2006 504(l-2) 227-230. 

Hu TC, Chiu SY, Dai BT, Tsai MS, Tung I-C, Feng MS. Nitric acid based slurry with citric acid as an inhibitor for copper chemical mechanical polishing. Mat ChemiPhys 1999 61(2) 169-171. 

G.H. Xu and H. Liang, Tribological Behavior of Copper Chemical-Mechanical Polishing, Proc. Sixth Int. Conf. Solid-State and IC Tech., Shanghai, Oct. 22-25, 2001, pp. 851-854. 

Miao, Y., Wang, S., Wang, C., et al., 2014. Effect of chelating agent on benzotriazole removal during post copper chemical mechanical polishing cleaning. Microelectron. Eng. 130, 18-23. 

Nolan, L.M., Cadien, K.C., 2013. Chemically enhanced synergistic wear a copper chemical mechanical polishing case study. Wear 307, 155—163. 

Researchers in Japan have determined that copper interconnects deposited by metallo-organic chemical vapor deposition (MOCVD), then followed by chemical mechanical polishing, provides sub-quarter-micron interconnects and can be achieved on a production basis. Titanium nitride and borophosphosilicate glass provide effective barriers against copper diffusion.PL[H]... 

Steigerwald, J., Zirpoli, R., Myrarka, S., et al., Metal Dishing and Erosion in the Chemical-Mechanical Polishing of Copper Used for Patten Delineation, Materials Research Society Symposium Proceedings, ULSI-X, 1995, pp. 55-59. 

Li, Y. and Babu, S. V, Chemical Mechanical Polishing of Copper and Tantalum in Potassium lodate-Based Slurries," Electrochem. Solid-State Lett., Vol. 4, No. 2, 2001, pp. G20-G22. 

Z. Stavreva, D. Zeidler, M. Plotner, and K. Drescher, Influence of process parameters on chemical-mechanical polishing of copper, Microelectr. Eng., 37-38, pp. 143-149, 1997. 

Steigerwald JM, Murarka SP, Gutmann RJ, Duquette DJ. Chemical processes in the chemical mechanical polishing of copper. Mater Chem Phys 1995 41 217-228. 

Luo Q, Ramarajan S, Babu SV. Modification of the Preston equation for the chemical-mechanical polishing of copper. Thin Solid Films 1998 335(1-2) 160-167. Tsu W, Wang Y. Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes. Electrochem Soc Lett 1997 144(2) L15. 

Stavreva Z, Zeidler D, Plotner M, Drescher K. Characteristics in chemical-mechanical polishing of copper comparison of polishing pads. App Surf Sci 1997 108 39-44. 

Luo Q, Ramarajan S, Babu SV. Modification of the Preston equation for the chemical-mechanical polishing of copper. Thin Solid Films 1998 335 160-167. 

Li Y, Hariharaputhiran M, Babu SV. Chemical-mechanical polishing of copper and tantalum with silica abrasives. J Mater Res 2001 16(5) 1066-1073. 

Hariharapurthiran M, Zhang J, Ramarajan S, Keleher JJ, Li Y, Babu SV. Hydroxyl radical formation in H202-amino acid mixtures and chemical-mechanical polishing of copper. J of Electrochem Soc 2000 147(10) 3820-3826. 

Luo Q. Chemical mechanical polishing of thin copper films [dissertation]. Potsdam (NY) Clarkson University 1997. 

Luo Q, Babu SV. Dishing effects during chemical mechanical polishing of copper in acidic media. J Electrochem Soc 2000 147(12) 4639-4644. 

Luo Q, Campbell DR, Babu SV. Stabilization of alumina slurry for chemical-mechanical polishing of copper. Langmuir 1996 12 3563. 

Han JH, Koo JE, Choi KS, Park BL, Chung JH, Hah SR, Lee SY, Kang YJ, Park JG. A study on water- mark defects in copper/low-k chemical mechanical polishing. Mater Sci Forum 2007. Forthcoming. 

J.M. Steigerwald, A Fundamental Study of Chemical Mechanical Polishing of Copper Thin Films, PhD Thesis, Rensselaer Polytechnic Institute, Troy, NY (1995). 

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