Chemical mechanical polishing planarization

P. A. Burke, Semi-Empirical Modeling of Si02 Chemical-Mechanical Polishing Planarization, Proc. VMIC Conf, pp. 379-384, Santa Clara, CA, June 1991. 

C. Yu, P. C. Fazan, V. K. Mathews, and T. T. Doan, Dishing Effects in a Chemical Mechanical Polishing Planarization Process for Advanced Trench Isolation, Appl. Phys. Lett., vol. 61, no. 11, pp. 1344-1346, Sept. 1992. 

Coppeta J, Racz L, Philipossian A, Kaufman F, Rogers C. Third International Chemical Mechanical Polish Planarization for ULSI Multilevel Interconnection Conference Santa Clara, CA Febl998. 

Chemical mechanical polishing/planarization (CMP) was developed in the late 1980s in order to overcome problems with multi-layer metallization. The increasing topography as a result of stacked metal lines led to depth-of-focus problems during... 

As its name applies, chemical mechanical polishing/planarization utilizes a hybrid of chemical and mechanical forces to yield a flat surface. It should be noted that using mechanical force alone (e.g., grinding) would successfully planarize a surface however, this would cause too much surface degradation. For more information about this process, see http //maltiel-consulting.eom/CMP-Chemical-mechanical planarization maltiel semiconductor.pdf... 

Electric chemical polish (ECP) and electric chemical mechanical polish (ECMP) [53] have been developed as promising methods for global planarization of LSI fabrication and abrasive-free polish. 

Figure 3.16 Different steps in the fabrication of MWNT nanoelectrode arrays, (a) metal film deposition, (b) catalyst deposition, (c) plasma-enhanced chemical vapor deposition for CNT growth, (d) dielectric encapsulation with Si02, (e) planarization with a chemical mechanical polishing to expose the ends of the carbon nanotubes, (f) electrochemical characterization. Readapted from Ref [6].

A. Hu, R. Chan, S. Chiao, Real Time Control of Chemical Mechanical Planarization (CMP) Process, First International Chemical-Mechanical Polish (CMP) for VLSI Multilevel Interconnection Conference, pp. 235-240, Feb. 22-23, 1996. 

D. Boning, D. Ouma, and J. Chung, Extraction of Planarization Length and Response Function in Chemical-Mechanical Polishing, Materials Research Society 1998 Spring Meeting, San Francisco, CA, May 1998. 

D. Ouma, Modeling of Chemical Mechanical Polishing for Dielectric Planarization, Ph.D. Thesis, Elect. Eng. and Comp. Sci. Dept., MIT, Nov. 1998. 

S. Sivaram, H. Bath, R. Leggett, A. Maury, K. Monning, and R. Tolies, Planarizing Tnterlevel Dielectrics by Chemical-Mechanical Polishing, Solid State Tech., pp. 87-91, May 1992. 

With the decrease of device dimensions, planarization of both front and back end layers by chemical mechanical polishing (CMP) now seems an absolute must for technologies smaller than 0.5 m. Unfortunately, CMP... 

The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts. 

Yuichi Y, Takaaki K, Shunichi S, Keiichi M, Yasuaki I, Shinji T, Naoki T. The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry. Mater Res Soc S5nnp Proc 2005 867 W3.5.1-W3.5.6. 

Zhao B, Shi FG. Chemical mechanical polishing in IC process new fundamental insights. Proceedings of the Fourth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, Feb. 11-12 1999. pp 13-22. 

Davari B, Koburger CW, Schulz R, Wamock JD, Furukawa T, lost M, Taur Y, Schwittek WG, DeBrosse JK, Kerbaugh ML, Mauer JL. A new planarization technique using a combination of RIE and chemical mechanical polish (CMP). lEDM Technical Digest Dec 1989. p 61-64. 

Boyd JM, Ellul JP. A one-step shallow trench global planarization process using chemical mechanical polishing. ECS Proc 1996 95-5 290. 

Lee H, Miller MH, Bifano TG. CMOS chip planarization by chemical-mechanical polishing for a vertically stacked metal MEMS integration. J Micromech Microeng 2004 14 108-115. 

Bath SH, Legegett R, Maury A, Monning K, Tolies R. Planarizing interlevel dielectrics by chemical mechanical polishing. Solid State Technol 1992 35 p 87. 

Copper has emerged as the leading contender for back-end-of-line metallization for advanced integrated circuits. Lack of a viable copper etch process and depth-of-focus limitations of advanced lithography leads to the chemical-mechanical polishing (CMP) of Damascene structures as the preferred method by which copper-based metallization is formed. CMP is the only known feasible method by which copper metallization can be patterned to the requisite, feature size and global planarity. 

Second barrier layer (Si3N4) + DT fill with highly doped polysilicon + planarization by CMP (chemical mechanical polishing) + oxide collar recess as usual. 

Chemical mechanical polishing (CMP) represents a specialized type of all-wafer etching meant to clean, smoothen, and planarize the entire wafer in preparation for subsequent lithographic steps. Modeling of CMP is complex because both mechanical abrasion and chemical reaction are involved. 

Metal-RIE process was/is used in the fabrication of Al inter-coimects on chips." This process is depicted in four steps in Fig. 2. The first step in the metal-RIE process is sputter deposition of a blanket thin film of Al (or Al alloys, such as Al-Cu, Al-Si) over a planerized dielectric (e.g., silicon dioxide). In the next step, the unwanted metal is etched away by reactive ion etching (RIE) through a photoresist mask. The features produced this way are separated, electrically isolated, metal Al conductor lines. In the RIE process chemicaly active ions such as F or Cl bombard the Al surface and form volatile aluminum fluorides or chlorides, which are then pumped away in the vacuum system. After etcliing, a dielectric is deposited in such a fashion that it fills the gaps between the lines as well as above them. In the last step, the dielectric is planarized using the chemical mechanical polishing (CMP) technique. ... 

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