Chemical mechanical polishing CMP removal rate uniformity and role of carrier parameters

how WID planarity can be improved is explained then, several methods for how to improve WIW global nonuniformity are introduced. According to Preston s law, the polishing rate is proportional to the load on the wafer and the relative speed between the wafer and the table. In order to improve WIW global nonuniformity, it is very important to control the profiles of the load on the wafer and the relative speed between the wafer and the table. The load on wafer is controlled by carrier design. The relative speed between the wafer and the table is controlled by changing the rotating speed of both the wafer and the table. 

In order to improve WID planarity, not only hardware, such as dressers, but also consumables, such as pads and slurries, are effective parameters. 

Advances in Chemical Medianical Planarization (CMP). littp //dx.dcM.oi l0.101ti/B97 0S 100165 3.0001 M 

Method (2) is the rotary table method that is most commonly used today. In this method, a pad is affixed to a table, slurry is dropped onto the pad, a wafer is pressed against the pad with the wafer s face facing down, and the table and wafer are rotated. In these conditions, the wafer is polished. Over the past decades, various types of equipment that are described below have been developed and released to the market. Nowadays, the rotary table method is the mainstream in semiconductor manufacturing. Therefore, this chapter describes the rotary table method. 

The following description illustrates various polish methods. 

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Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters... 

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