GaN Growth on Chemical Mechanical Polished Porous SiC

Sample Hydrogen polishing GaN nucleation layer GaN epilayer XRD FWHM (10 2) (arc min) 

CVD1456 — Temperature 930 °C Pressure 30 Torr Thickness 100 nm 1030°C 76 Torr 3 pm On porous SiC 6 On planar SiC 8.4 

Two GaN layers are grown on the CMP porous SiC substrates with different nucleation parameters, as listed in Table 6.5. Before growth, the CMP porous SiC substrates are cleaned with standard RCA procedure followed by HF-dip to remove the surface oxide. For CVD1456, a 100 nm thick GaN nucleation layer is deposited at 930 °C and 30 Torr, followed by a 3 pm thick GaN epilayer grown at 76 Torr and 1030 °C. For CVD1489, a 600 nm thick GaN nucleation layer is deposited at 960 °C and 200 Torr, followed by a 3 pm thick GaN epilayer grown with the same parameters as those of CVD1456. 

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