Compounds, ternary

The second type of simple reaction is decomposition. This reaction is also easy to recognize. Typically, only one reactant is given. A type of energy, such as heat or electricity, may also be indicated. This reactant decomposes to its elements, to an element and a simpler compound, or to two simpler compounds. Binary compounds may yield two elements or an element and a simpler compound. Ternary (three-element) compounds may yield an element and a compound or two simpler compounds. These possibilities are shown in Fig. 7.2. 

Many binary inorganic phases with a significant composition range can be listed1 (Table 4.3). Apart from binary compounds, ternary and other more complex materials may show nonstoichiometry in one or all atom components. 

Chemical deposition is not limited to binary compounds. Ternary (and higher) compounds can be deposited by this technique. For the same reason as for the non II-VI and IV-VI compounds in Section 2.9.3, this section will suffice with a table of ternary compounds reported up to now, with two additions. The first is a brief consideration of the principles involved in the deposition of materials containing three or more elements. The second is to identify, in the table, which deposits have been clearly demonstrated to be a true single-phase solid solution rather than a mixture of two or more phases. 

Ionic compounds consist of positive ions (cations) and negative ions (anions) hence, ionic compounds often consist of a metal and nonmetal. The electrostatic attraction between a cation and anion results in an ionic bond that results in compound formation. Binary ionic compounds form from two elements. Sodium chloride (NaCl) and sodium fluoride (NaF) are examples of binary ionic compounds. Three elements can form ternary ionic compounds. Ternary compounds result when polyatomic ions such as carbonate (C032 ), hydroxide (OH-), ammonium (NH4+), form compounds. For example, a calcium ion, Ca2+, combines with the carbonate ion to form the ternary ionic compound calcium carbonate, CaC03. Molecular compounds form discrete molecular units and often consist of a combination of two nonmetals. Compounds such as water (H20), carbon dioxide (C02), and nitric oxide (NO) represent simple binary molecular compounds. Ternary molecular compounds contain three elements. Glucose ( 12 ) is a ternary molecular compound. There are several distinct differences between ionic and molecular compounds, as summarized in Table 1.2. 

Point defects are an important part of the work in this paper. There are many reasons for the formation of point defects in minerals and their presence can exert important perturbations on the properties of the material (4). Point defects are formed because of the thermally driven intrinsic disorder in a lattice, the addition of aliovalent impurities or dopants, the presence of metal-nonmetal nonstoichiometry, and the creation of nonideal cation ratios. The first three source of defects are well-known from binary compounds but the last is unique to ternary compounds. Ternary compounds are much more complex than the binary compounds but they also have gained a great deal of attention because of the variety of important behavior they exhibit including now the presence of superconductivity at high temperatures. The point defects can be measured by introducing probe ions into the lattice. 

Binary compounds may yield two elements or an element and a simpler compound. Ternary (three-element) compounds may yield an element and a compound or two simpler compounds. These possibilities are shown in Fig. 8-2. 

Another feature of the systems of this subgroup is the large extent of the limited solid solutions. Differences in the crystal chemistry characteristics of the rare-earth metals in the systems considered are insignificant, but they influence composition, structure and the number of ternary compounds. Ternary compounds with the composition Sco.3Ro.7Ge2 (R=Y, Dy) were found to exist for the Sc and Ge ternaries with Y and Dy on the digermanide section. They have no equivalent in other... 

Other records store data for mixtures. Binary mixture data are indexed by the registry numbers of two compounds, ternary data for three compounds etc. These are followed by index keys for the references. 

Ceramic superconducting films are divided into three classes, Bl-type compounds, ternary compounds, and high-temperature oxide superconductors. The Bl-type (NaCl-type structure) compound superconductors consist of nitrides and carbides with 5A, 6A, and 7A transition metals, such as TiN, ZrN, HfN, VN, NbN TaN, MoN, WN, TiC, ZrC, HfC, VC, NbC, TaC, MoC, WC, NbNi tC t, hex-MoN, and hex-MoC. Regarding the thin-film material, it is notable that NbN and NbN] (C ( (x = 0.08 and 0.15) have superconducting critical temperature, T, values of 17.3 and 17.8 K, respectively. The deposition method used is almost always sputtering or CVD. The properties of films deposited by the former method are superior. A highly reliable Josephson device was realized with an NbN film. 

Among cerium-containing nitride-type compounds, ternary nitrides in which Ce is tetravalent are formed with electropositive metals such as lithium or barium. These hygroscopic compounds are essentially ionic in character. In addition, oxynitrides containing cerium and barium are also known. However, surprisingly, no ionic ternary nitride (or quaternary oxynitride) involving other R elements has been described. 

In block copolymers [8, 30], long segments of different homopolymers are covalently bonded to each otlier. A large part of syntliesized compounds are di-block copolymers, which consist only of two blocks, one of monomers A and one of monomers B. Tri- and multi-block assemblies of two types of homopolymer segments can be prepared. Systems witli tliree types of blocks are also of interest, since in ternary systems the mechanical properties and tire material functionality may be tuned separately. 

There are hundreds of semiconductor materials, but silicon alone accounts for tire overwhelming majority of tire applications world-wide today. The families of semiconductor materials include tetraliedrally coordinated and mostly covalent solids such as group IV elemental semiconductors and III-V, II-VI and I-VII compounds, and tlieir ternary and quaternary alloys, as well as more exotic materials such as tire adamantine, non-adamantine and organic semiconductors. Only tire key features of some of tliese materials will be mentioned here. For a more complete description, tire reader is referred to specialized publications [6, 7, 8 and 9]. 

III-V compound semiconductors with precisely controlled compositions and gaps can be prepared from several material systems. Representative III-V compounds are shown in tire gap-lattice constant plots of figure C2.16.3. The points representing binary semiconductors such as GaAs or InP are joined by lines indicating ternary and quaternary alloys. The special nature of tire binary compounds arises from tlieir availability as tire substrate material needed for epitaxial growtli of device stmctures. 

Figure C2.16.3. A plot of tire energy gap and lattice constant for tire most common III-V compound semiconductors. All tire materials shown have cubic (zincblende) stmcture. Elemental semiconductors. Si and Ge, are included for comparison. The lines connecting binary semiconductors indicate possible ternary compounds witli direct gaps. Dashed lines near GaP represent indirect gap regions. The line from InP to a point marked represents tire quaternary compound InGaAsP, lattice matched to InP.

Temary and quaternary semiconductors are theoretically described by the virtual crystal approximation (VGA) [7], Within the VGA, ternary alloys with the composition AB are considered to contain two sublattices. One of them is occupied only by atoms A, the other is occupied by atoms B or G. The second sublattice consists of virtual atoms, represented by a weighted average of atoms B and G. Many physical properties of ternary alloys are then expressed as weighted linear combinations of the corresponding properties of the two binary compounds. For example, the lattice constant d dependence on composition is written as ... 

This approximation, known as Vegard s laM>, accurately describes the average lattice constant (but not the microscopic stmcture ) of most ternary compounds. However, the expression for the gap must be modified by the inclusion of a quadratic tenn... 

Two of the material systems shown in figure G2.16.3 are of particular importance. These are the ternary compounds fonned from group III elements such as A1 and Ga in combination with As and quaternary compounds fonned from Ga and In in combination with As and P [8,15,]. Ternary Al Ga s grown on GaAs is the best known of the general class of compounds Quaternary Ga In As grown on InP is... 

Revised material in Section 5 includes an extensive tabulation of binary and ternary azeotropes comprising approximately 850 entries. Over 975 compounds have values listed for viscosity, dielectric constant, dipole moment, and surface tension. Whenever possible, data for viscosity and dielectric constant are provided at two temperatures to permit interpolation for intermediate temperatures and also to permit limited extrapolation of the data. The dipole moments are often listed for different physical states. Values for surface tension can be calculated over a range of temperatures from two constants that can be fitted into a linear equation. Also extensively revised and expanded are the properties of combustible mixtures in air. A table of triple points has been added. 

Thousands of compounds of the actinide elements have been prepared, and the properties of some of the important binary compounds are summarized in Table 8 (13,17,18,22). The binary compounds with carbon, boron, nitrogen, siUcon, and sulfur are not included these are of interest, however, because of their stabiUty at high temperatures. A large number of ternary compounds, including numerous oxyhaUdes, and more compHcated compounds have been synthesized and characterized. These include many intermediate (nonstoichiometric) oxides, and besides the nitrates, sulfates, peroxides, and carbonates, compounds such as phosphates, arsenates, cyanides, cyanates, thiocyanates, selenocyanates, sulfites, selenates, selenites, teUurates, tellurites, selenides, and teUurides. 

Quantum well lasers ia this system typically use ternary Iuq 53GaQ 47AS wells and biaary InP barriers. AH quaternary lasers, ie, lasers ia which both the wells and barriers are formed by quaternary compounds, are also being developed. These stmctures can be lattice matched or strained. 

Ternary compounds are also named by citing the more electropositive constituent first. The various oxidation states of the more electropositive element are designated by a system of prefixes and terminations added to a stem characteristic of the element, except in the case of coordination compounds (qv). Examples are as follows (see Chlorine oxygen acids and salts) ... 

Phosphides. Compounds of phosphoms containing the more electropositive elements are generally called phosphides. A large number of binary phosphides as well as many ternary mixed-metal phosphides, metal phosphide nitrides, etc, are known. Some binary phosphides, such as those of nickel, exhibit a variety of stoichiometries (Ni P, Ni P2, Nq2P5, Ni2P, Ni P, NiP, NiP2, NiP ), whereas others, such as aluminum, form only one (AlP). Metalloids such as B and Si also form phosphides. 

Al—FeSi. Iron and shicon, present in primary aluminum, may also be added to produce enriched ahoys for specific purposes. The equhibrium phase fields in the Al—Fe—Si system are shown in Figure 20 and Table 17. The intermetahic phases have a limited range of composition when in equhibrium with the aluminum soHd solution. The amount of iron in soHd solution in the matrix is smah, so almost ah of the iron is in the intermetahic compounds. At low shicon contents the iron is present as Al Fe except for about 0.01% Fe in soHd solution. As shicon content increases, the ternary intermetahic... 

Heterostructures and Superlattices. Although useful devices can be made from binary compound semiconductors, such as GaAs, InP, or InSb, the explosive interest in techniques such as MOCVD and MBE came about from their growth of ternary or quaternary alloy heterostmctures and supedattices. Eor the successful growth of alloys and heterostmctures the composition and interfaces must be accurately controlled. The composition of alloys can be predicted from thermodynamics if the flow in the reactor is optimised. Otherwise, composition and growth rate variations are observed... 

Phase Behavior. One of the pioneering works detailing the phase behavior of ternary systems of carbon dioxide was presented ia the early 1950s (12) and consists of a compendium of the solubiHties of over 260 compounds ia Hquid (21—26°C) carbon dioxide. This work contains 268 phase diagrams for ternary systems. Although the data reported are for Hquid CO2 at its vapor pressure, they yield a first approximation to solubiHties that may be encountered ia the supercritical region. Various additional sources of data are also available (1,4,7,13). 

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