Resist materials etch resistance

As chlorine trifluoride is a corrosive gas, suitable conditions must be selected in each cleaning process from a sufficient study on the corrosion-resistances of materials used in the CVD system, the characteristics of the semiconductor materials etched by chlorine trifluoride and so on. 

Some nonhygroscopic materials such as metals, glass, and plastics, have the abiUty to capture water molecules within microscopic surface crevices, thus forming an invisible, noncontinuous surface film. The density of the film increases as the relative humidity increases. Thus, relative humidity must be held below the critical point at which metals may etch or at which the electrical resistance of insulating materials is significantly decreased. 

Etching. After a resist is patterned on a wafer, the exposed or unwanted substrate is removed by etching processes. Subsequentiy the resist is removed, leaving a desired pattern in a functional layer of the integrated circuit. Etching is performed to pattern a number of materials in the IC fabrication process, including blanket polysiHcon, metal layers, and oxide and nitride layers. The etch process for each material is different, and adapted to the material requirements of the substrate. 

Limitations of Plasma CVD. With plasma CVD, it is difficult to obtain a deposit of pure material. In most cases, desorption of by-products and other gases is incomplete because of the low temperature and these gases, particularly hydrogen, remain as inclusions in the deposit. Moreover, in the case of compounds, such as nitrides, oxides, carbides, or silicides, stoichiometry is rarely achieved. This is generally detrimental since it alters the physical properties and reduces the resistance to chemical etching and radiation attack. However in some cases, it is advantageous for instance, amorphous silicon used in solar cells has improved optoelectronic properties if hydrogen is present (see Ch. 15). 

A rapidly increasing number of publications on polysilanes documents current interest in these polymers (JJ. Polysilanes are potentially applicable in microlithography as high resolution UV-resists (2J, imageable etch barriers ), or contrast enhancement layers (4). They have been successfully used as precursors to Si-C fibers (5J and ceramic reinforcing agents ((L). Polysilanes have also initiated polymerization of vinyl monomers (J ). Doping of polysilanes have increased their conductivity to the level of semiconductors (8). Very recently polysilanes were used as photoconductors (9) and non-linear optical materials (10b... 

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