Devices ion implantation

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

Rimini E 1995 Ion Implantation Basics to Device Fabrication (Boston, MA Kiuwer)... 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

The plasma source implantation system does not use the extraction and acceleration scheme found in traditional mass-analy2ing implanters, but rather the sample to be implanted is placed inside a plasma (Fig. 4). This ion implantation scheme evolved from work on controlled fusion devices. The sample is repetitively pulsed at high negative voltages (around 100 kV) to envelope the surface with a flux of energetic plasma ions. Because the plasma surrounds the sample, and because the ions are accelerated normal to the sample surface, plasma-source implantation occurs over the entire surface, thereby eliminating the need to manipulate nonplanar samples in front of the ion beam. In this article, ion implantation systems that implant all surfaces simultaneously are referred to as omnidirectional systems. 

Polyimides, both photodefinable and nonphotodefinable, are coming iato iacreased use. AppHcatioas iaclude planarizing iatedayer dielectrics oa iategrated circuits and for interconnects, passivation layers, thermal and mechanical stress buffers ia packagiag, alpha particle barriers oa memory devices, and ion implantation (qv) and dry etching masks. 

A variety of colors, such as green, amber, and red (and infrared), can be obtained with different semiconductor materials without the need for a filter (see Ch. 13, Table 13.4). A LED (or photodiode) device may consist of multiple diodes in an array operating in the reverse-bias mode. Patterns of light showing symbols, letters, or numbers can thus be produced with different colors obtained by doping the semiconductor material by CVD or ion implantation. 

Kuzuhara and T. Nozaki, Active Layer Formation by Ion Implantation Hashimoto, Focused Ion Beam Implantation Technology Nozaki and A. Higashis aka, Device Fabrication Process Technology Ino and T. Takada, GaAs LSI Circuit Design... 

Semiconductor device manufacture, high purity oxygen in, 13 459 Semiconductor doping, in ion implantation, 14 446-447... 

Ion implantation appears as the only feasible method to accomplish selective area doping of SiC in planar device technology. As described in this chapter, substantial progress has been made during recent years but several fundamental issues and technology barriers remain before the implantation process is fully developed and can be truly implemented in SiC device processing. Eor instance, mesa-etched p n-diodes... 

The properties of the wide band-gap semiconductor SiC have been extensively studied by HFEPR because knowledge of the defect states is needed for its application in high power and radiation resistant devices. (The main method of doping SiC is by ion implantation that inevitably also introduces defects into the lattice.) The primary defects that can be produced are vacancies, interstitials and anti-sites. In contrast to silicon the primary defects in SiC seem to be stable at and even far above room temperature. 

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