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The Role of Ion Implantations in Device Fabrications

As this chapter has shown, ion implantation is an essential technology in the production of semiconductor devices. In addition, it plays a key role in sustaining the rapid pace of development required by the ever evolving semiconductor industry. [Pg.208]

Jaeger, R.C. Modular series on solid state devices. In Neudeck, G.W., Pierret, R.F. (eds.) Introduction to Microelectronic Fabrication, vol. V. Addison-Welsley, Massachusetts (1988) [Pg.209]

Muller, R.S., Kamins, T.I. Device Electronics for Integrated Circuits, 2nd edn. Wiley, New York (1986) [Pg.210]

Ohzone, T., Shimura, H., Tsuji, K., Hirao, T. Silicon-gate n-well CMOS process by full ion-implantation technology. IEEE Trans. Electron Devices, 27, 1789 (1980) [Pg.210]

Quevedo-Lopez, M.A., El-Bouanani, M., Kim, M.J., Gnade, B.E., Wallace, R.M., Visokay, M.R., Li-Fatou, A., Bevan, M.J., Colombo, L. Phosphorus and arsenic penetration studies through HfSi xOy and HfSi xOyNz films. Appl. Phys. Lett. 81, 1609-1611 (2002) [Pg.210]

Boron penetration in p polycrystaUine-Si/AloOJSi metal-oxide-semiconductor system. Appl. Phys. Lett. 77, 2207-2209(2000) [Pg.210]


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