Ion beam Implantation

The talk will briefly review some of these developments ranging from high temperature equilibrium plasmas to cool plasmas, PECVD, ion implantation, ion beam mixing and ion assisted etching and deposition. Brief consideration will also be given to sputtering and ionised cluster beam deposition techniques in inorganic synthesis. 

Recent interest in ion beam processing has focused on studies of ion implantation, ion beam mixing, ion-induced phase transformations, and ion beam deposition. These interests have been stimulated by the possibilities of synthesizing novel materials with potential applications in the semiconductor, tribological, corrosion, and optical fields. 

Compares the processing characteristics for electroplating, electroless plating, CVD, PVD, thermal diffusion, ion nitriding, TRD, ion implantation, ion-beam assisted deposition, and thermal spraying... 

Chaimelling only requires a goniometer to inelude the effeet in the battery of MeV ion beam analysis teelmiques. It is not as eonnnonly used as tire eonventional baekseattering measurements beeause the lattiee loeation of implanted atoms and the aimealing eharaeteristies of ion implanted materials is now reasonably well established [18]. Chaimelling is used to analyse epitaxial layers, but even then transmission eleetron mieroseopy is used to eharaeterize the defeets. 

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

Two newer areas of implantation have been receiving attention and development. Focused ion beams have been iavestigated to adow very fine control of implantation dimensions. The beams are focused to spot sizes down to 10 nm, and are used to create single lines of ion-implanted patterns without needing to create or use a mask. Although this method has many attractive features, it is hampered by the fact that the patterning is sequential rather than simultaneous, and only one wafer rather than many can be processed at any one time. This limits the production appHcations of the technique. 

The plasma source implantation system does not use the extraction and acceleration scheme found in traditional mass-analy2ing implanters, but rather the sample to be implanted is placed inside a plasma (Fig. 4). This ion implantation scheme evolved from work on controlled fusion devices. The sample is repetitively pulsed at high negative voltages (around 100 kV) to envelope the surface with a flux of energetic plasma ions. Because the plasma surrounds the sample, and because the ions are accelerated normal to the sample surface, plasma-source implantation occurs over the entire surface, thereby eliminating the need to manipulate nonplanar samples in front of the ion beam. In this article, ion implantation systems that implant all surfaces simultaneously are referred to as omnidirectional systems. 

Catalysis. Ion implantation and sputtering in general are useful methods for preparing catalysts on metal and insulator substrates. This has been demonstrated for reactions at gas—soHd and Hquid—soHd interfaces. Ion implantation should be considered in cases where good adhesion of the active metal to the substrate is needed or production of novel materials with catalytic properties different from either the substrate or the pure active metal is wanted (129—131). Ion beam mixing of deposited films also promises interesting prospects for the preparation of catalysts (132). 

There are, however, continuing difficulties for catalytic appHcations of ion implantation. One is possible corrosion of the substrate of the implanted or sputtered active layer this is the main factor in the long-term stabiHty of the catalyst. Ion implanted metals may be buried below the surface layer of the substrate and hence show no activity. Preparation of catalysts with high surface areas present problems for ion beam techniques. Although it is apparent that ion implantation is not suitable for the production of catalysts in a porous form, the results indicate its strong potential for the production and study of catalytic surfaces that caimot be fabricated by more conventional methods. 

Another important consideration for providing uniform implantation involves the geometry of the ion beam with respect to the target surface. Too high an angle from normal incidence leads to excessive sputtering and low retained dose. These issues and others pertinent to practical aspects of implantation treatment have been discussed (35,165). 

H. H. Anderson, "lon-Bombardment-Induced Composition Changes in Alloys and Compounds," in J. S. WiUiams and. M. Poate, eds.. Ion Implantation and Beam Processing, Academic Press, Inc., New York, 1984, Chapt. 6. 

G. Deamaley, "Historical Perspective of Ion Implantation," in Proceedings 8th International Conference on Suface Modification of Metals by Ion Beams, Kanai wa, Japan, North-HoUard, Amsterdam. 

P. Mazzoldi, G. Mattel, C. Maurizio, E. Cattaruzza, F. Gonella, in E. Knystautas (ed.) Metal Alloy Nanoclusters by Ion Implantation in Silica, in Engineering Thin Films and Nanostructures with Ion Beams, Chapter 7, CRC Press, New York, 2005, 82. 

Figure 13. Damage and concentration profiles for single and multiple ion beam (boron) implantation into silicon.

In the ionic implantation, a beam of trivalent ions (e.g. B+ ions), is used to produce a p+ layer. Pentavalent ions (e.g. P ions), instead, create an n+ layer. The main advantage of this technique rely in the fact that the ions penetrate the crystal only for a short distance from the surface ( 200nm). The penetration depth depends on the beam energy (25 100keV). Typical doping level is 1018 1019ions/cm3. With such a high dopant concentration, the layer becomes practically a metal. 

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