Semi-insulating

The main advantages that compound semiconductor electronic devices hold over their siUcon counterparts He in the properties of electron transport, excellent heterojunction capabiUties, and semi-insulating substrates, which can help minimise parasitic capacitances that can negatively impact device performance. The abiUty to integrate materials with different band gaps and electronic properties by epitaxy has made it possible to develop advanced devices in compound semiconductors. The hole transport in compound semiconductors is poorer and more similar to siUcon. Eor this reason the majority of products and research has been in n-ty e or electron-based devices. 

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

When both donors and acceptors are present, compensation results, whereby the electrons supplied by the donor are given to the acceptor. Thus, the free carrier concentration can be considerably reduced below that expected from introducing a known donor or acceptor if the opposite type of dopant is unintentional. For example, semi-insulating (SI) InP (used as a substrate for epitaxial growth) can be made by incorporating low levels of Fe3+ as a deep acceptor (reduced to Fe2+) to compensate for unintentional n-type doping in the sample [19]. 

From a practical point of view, the optical detection of possible X—H bonds in hydrogenated samples is performed at LHeT as a better sensitivity is obtained at this temperature because the features are sharper than the ones observed at ambient. The sensitivity of Fourier Transform Spectroscopy (FTS) allows usually a normal incidence geometry of the optical beam. Two kinds of samples are generally used in the hydrogenation studies. The first are thin epitaxial layers (1 to 5 in thickness) with dopant concentrations in the 1017-102° at/cm3 range on a semi-insulating... 

G. F. Neumark and K. Kosai, Deep Levels in Wide Band-Gap III-V Semiconductors David C. Look, The Electrical and Photoelectronic Properties of Semi-Insulating GaAs... 

Nolte, D. D., Semi insulating semiconductor heterostructures Optoelectronic properties and applications, J. Appl. Phys. 1999, 85, 6259... 

I.C.BASSIGNANA D.A.MACQUISTAN, 7th Int. Conf. on III-V Semi-insulating materials, Ixtapa Mexico, (1992). 

This technique, first developed by Renninger using laboratory equipment, has been used to study the relation between deep level, electrically active EL2 defects and lattice perfection in semi-insulating GaAs. Ishikawa et al. performed plane wave topography with a separate monochromator-collimator in... 

D. C. Look, Defects Relevant for Compensation in Semi-Insulating GaAs... 

High-purity semi-insulating (SI) SiC material has the highest reported thermal conductivity with a value of 4.9 W/(cm-K). Lower values are measured for the doped crystals but they are all above 4 W/(cm-K) at room temperature [10]. 

Another even more interesting development was occurring at the same time. This was the development of a new growth technique, called the High Temperature Chemical Vapor Deposition (HTCVD) technique [34], that produced crystals that were intrinsically semi-insulating. In a paper by Ellison et al. [34], the authors reported on a defect with an activation energy of 1.15 eV yielding an extrapolated room temperature resistivity in excess of 10 il-cm. 

One of the prime advantages of the HTCVD approach is the resulting crystal properties. Due to the high purity of the gases, the material comes out intrinsically semi-insulating. Also, since the source material is produced on demand, the stoichiometry can always be kept the same, unlike the case with seeded sublimation growth. This will improve the yield of the grown material. 

A GaN substrate would be a help in this respect but it would need to be semi-insulating. In addition, GaN has a poor thermal conductivity and is not very suitable due to this negative material property. Aluminum nitride substrates may become the substrate of choice for GaN high-frequency applications. It has a reasonable thermal conductivity and is intrinsically semi-insulating but only time will tell. 

K proved that the ground state of Vs0 corresponds to S = 1 and that the ZFS parameter D is positive. An anisotropic spectrum with S = was shown to confirm the isolated C vacancy model. The properties of sublimation grown semi-insulating SiC for device applications have also been studied19 by a wide range of techniques. 

Fig. 8. Energy below the conduction band of levels reported in the literature for GaAs. Arrangement and notations are the same as for Figs. 4 and 5. Notations not defined there are epitaxial layer on semi-insulating substrate (EPI/SI), boat-grown (BG), vapor phase epitaxial layer on semi-insulating substrate (VPE/SI), melt-grown (M), molecular beam epitaxy (MBE), horizontal Bridgman (HB), irradiated with 1-MeV electrons or rays (1-MeV e, y), thermally stimulated capacitance (TSCAP), photoluminescence excitation (PLE), and deep level optical spectroscopy (DLOS).

---