Compound semiconductor devices

Light-emitting diodes are the most commercially important compound semiconductor devices in terms of both doUar and volume sales. The 1991 worldwide compound semiconductor device market totaled 2.8 biUion (39). Light-emitting diodes accounted for ca 1.9 biUion of this market. Visible and ir LEDs represented 37 and 30%, respectively. These markets are expected to grow as LEDs are increasingly employed in advanced appHcations. 

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

There are a number of methods available for the formation of compound semiconductors by electrodeposition (Table 1). Electrochemical ALE promises better control over the deposition process by breaking it into a series of individual steps, with each step becoming a point of control. The questions raised include What kind of deposit quality can be achieved What compounds can be formed What device structures can be formed What niches will electrodeposition fill in the field of compound semiconductor device formation ... 

Silicon Dioxide. Si02 layers produced by PECVD are useful for intermetal dielectric layers and mechanical or chemical protection and as diffusion masks and gate oxides on compound-semiconductor devices. The films are generally formed by the plasma-enhanced reaction of SiH4 at 200-300 °C with nitrous oxide (N20), but CO, C02, or 02 have also been used (238-241). Other silicon sources including tetramethoxysilane, methyl dimethoxysilane, and tetramethylsilane have also been investigated (202). Diborane or phosphine can be added to the deposition atmosphere to form doped oxide layers. 

Schoenmaker, W. and Vankemmel, R. (1992) Simulation of Compound Semiconductor-Devices. Microelectron. Eng., 19, 31-38. 

From Estreich, O.B., Compound semiconductor devices for digital circuits, in The VLSI Handbook, Chen, W.-K., Ed., CRC Press, Boca Raton, FL, 2000, p. 70-13. 

The applications of semiconductors materials are discussed in Volume 2. The various topics on semiconductor devices include Si/GeSi heterostructures for Si-based nanoelectronics, impact ionization in compound semiconductor devices, quantum dot optoelectronic devices, failure mechanisms in compound semiconductors, electron devices, semiconductor quantum materials and their applications in electronics and optoelectronics, and photoelectromotive force effects in semiconductors. 

Chapter 2. Impact Ionization in Compound Semiconductor Devices... 

Silicon carbide (SiC) is a compound semiconductor device well suited for high-temperature, high-frequency, and high-power device applications. The degree of crystallinity is an important property of silicon carbide (SiC) compound semiconductor materials. LCTF Raman chemical imaging has been employed to measure the distribution of SiC polycrystallinity and polytypes within SiC wafers [56]. 

For integrated circuits using / -channel diamond, bipolar logics and the complementary MOS (CMOS) logic are not available and the circuits are limited to the logics of unipolar FETs, which are familiar with compound semiconductor devices. The typical unipolar FET logics are summarized in Table 3. 

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