Plasma ions

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

The plasma source implantation system does not use the extraction and acceleration scheme found in traditional mass-analy2ing implanters, but rather the sample to be implanted is placed inside a plasma (Fig. 4). This ion implantation scheme evolved from work on controlled fusion devices. The sample is repetitively pulsed at high negative voltages (around 100 kV) to envelope the surface with a flux of energetic plasma ions. Because the plasma surrounds the sample, and because the ions are accelerated normal to the sample surface, plasma-source implantation occurs over the entire surface, thereby eliminating the need to manipulate nonplanar samples in front of the ion beam. In this article, ion implantation systems that implant all surfaces simultaneously are referred to as omnidirectional systems. 

Figure 2 Relationship of SIMS, separate bombardment SNMSs and direct bombardment SNMSd. (a) Materials for SIMS analysis are those ions formed In the sputtering with a focused primary ion beam. The largest fraction of the particles sputtered from the surface are neutral atoms, (b) Ions for SNMS analysis are formed by ionization of the sputtered neutrals, (c) When the plasma is used as an ionizer, plasma ions can also be used to sputter the sample surface at low energies.

The SNMS instrumentation that has been most extensively applied and evaluated has been of the electron-gas type, combining ion bombardment by a separate ion beam and by direct plasma-ion bombardment, coupled with postionization by a low-pressure RF plasma. The direct bombardment electron-gas SNMS (or SNMSd) adds a distinctly different capability to the arsenal of thin-film analytical techniques, providing not only matrbe-independent quantitation, but also the excellent depth resolution available from low-energy sputterii. It is from the application of SNMSd that most of the illustrations below are selected. Little is lost in this restriction, since applications of SNMS using the separate bombardment option have been very limited to date. 

For intermediate temperatures from 400-1000°C (Fig. 11), the volatilization of carbon atoms by energetic plasma ions becomes important. As seen in the upper curve of Fig. 11, helium does not have a chemical erosion component of its sputter yield. In currently operating machines the two major contributors to chemical erosion are the ions of hydrogen and oxygen. The typical chemical species which evolve from the surface, as measured by residual gas analysis [37] and optical emission [38], are hydrocarbons, carbon monoxide, and carbon dioxide. 

Fedulov, V.I. Concerning Regularities of Particle s Driving in Potential Fields (on example of electron s movement in electrical field with distributed potential) in ARW977788 Emerging Applications of Vacuum-Arc-Produced Plasma, Ion and Electron Beams , edited by E.M. Oks and I.G. Brown (Kluwer Academic Publishers, Dordrecht, the Netherlands), 213, 2003. 

The plasma is maintained at a temperature of 10 000° C by an external radio frequency current, as described in Section 3.3. At this temperature, many molecular species are broken down, and approximately 50% of the atoms are ionized. So far this is identical to ICP-OES, but for ICP-MS we are not interested in the emission of electromagnetic radiation, but rather in the creation of positive ions. To transfer a representative sample of this plasma ion population to the mass spectrometer, there is a special interface between the plasma and the mass spectrometer. This consists of two sequential cones... 

Glow discharge source (GDMS) Laser ion source (LIMS) Secondary ion source (SIMS) Sputtered neutral source (SNMS) Thermal ionization source (TIMS) Inductively coupled plasma ion source (ICP-MS)... 

The ion source is an essential component of all mass spectrometers where the ionization of a gaseous, liquid or solid sample takes place. In inorganic mass spectrometry, several ion sources, based on different evaporation and ionization processes, such as spark ion source, glow discharge ion source, laser ion source (non-resonant and resonant), secondary ion source, sputtered neutral ion source and inductively coupled plasma ion source, have been employed for a multitude of quite different application fields (see Chapter 9). 

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