High negative voltage

The plasma source implantation system does not use the extraction and acceleration scheme found in traditional mass-analy2ing implanters, but rather the sample to be implanted is placed inside a plasma (Fig. 4). This ion implantation scheme evolved from work on controlled fusion devices. The sample is repetitively pulsed at high negative voltages (around 100 kV) to envelope the surface with a flux of energetic plasma ions. Because the plasma surrounds the sample, and because the ions are accelerated normal to the sample surface, plasma-source implantation occurs over the entire surface, thereby eliminating the need to manipulate nonplanar samples in front of the ion beam. In this article, ion implantation systems that implant all surfaces simultaneously are referred to as omnidirectional systems. 

Standard [reduction] potentials for hundreds of electrodes have been determined (mostly in the period 1925-45, during which time they were referred to as oxidation potentials ) and are usually tabulated in order of increasing tendency to accept electrons. This ordering is also known as the electromotive series of the elements. As can be seen in the abbreviated version in Table 1, sodium is the most active of the metallic elements in the sense that its oxidation product Na+ shows the smallest tendency (as indicated by the highly negative voltage) to undergo reduction. 

Fig. 1 Schematic of a corona gun with an electrode at high negative voltage with charged powder and ions in the presence of a grounded flat part.

Fig. 5. Schematic representation of sputter deposition. The tai get T and substrate holder S are inside a cooled chamber that can be evacuated and filled with argon gas under reduced pressure. The target T is connected to a high negative voltage supply V-. The cooled substrate holder is connected to a voltage supply Fg. The chamber itself is grounded.

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