Deep trench

To achieve the lowest possible delay a bipolar switching transistor developed by IBM minimizes parasitic resistances and capacitances. It consists of self-aligned emitter and base contacts, a thin intrinsic base with an optimized collector doping profile, and deep-trench isolation (36). Devices must be isolated from each other to prevent unwanted interactions in integrated circuits. While p—n junctions can be used for isolation, IBM s approach etches deep trenches in the siUcon wafer which are filled with Si02 to provide electrical insulation. 

Because ring they did. Yes, I tried to bury myself in libraries and archives, the deep trench-digging of my doctorate work, the academic papers, the meetings and seminars, the conference speeches, the new appointments and departmental committees, but nothing stopped my ears. Then, before long, I found a way... 

Bakhtari K, Guldiken RO, Busnaina AA, Park JG (2006) Experimental and analytical study of semicrometer particle removal from deep trenches. J Electrochem Soc 153 C603-C607... 

Several recovery scenarios were considered for remediation. Initially, construction of a narrow, permeable trench parallel to the canal appeared to be an appropriate interception system. The construction technique considered was use of a specially designed deep trenching unit. This type of trench would have included a tile drain leading to a single two-pump recovery well. However, a review of the subsurface site plans and interviews with long-term employees determined that an unknown number of buried pipes traverse the area intended for the trench construction. Disruption of refining operations and safety considerations resulted in rejection of this option. 

Samples were collected from a 2-m deep trench excavated prior to mining from the Bounty Gold Deposit in Western Australia. Bulk soil samples were analysed by ICP-... 

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. 

The Baku-Tbilisi-Ceyhan and the South-Caucasus-Pipeline projects will be arranged in a 22-meter wide construction corridor for two parallel pipelines buried in a 2.2-meter deep trench. This alone illustrates the complexity of facilitating pipeline systems in regards of environmental issues and the complicated morphological mountainous relief. 

A four-electrode capacitively coupled (contactless) detector has been integrated on a Pyrex glass chip for detection of peptides (1 mM) and cations (5 mM K+, Na+, Li+). The A1 electrode (500 nm Al/100 nm Ti) was deposited in a 600-nm-deep trench and was covered with a thin dielectric layer (30-nm SiC). The other parts of the channel were covered and insulated with Si3 N4 (160 nm). To avoid gas bubble formation after dielectric breakdown, the electric field for separation was limited to 50 V/cm [145]. This four-electrode configuration allows for sensitive detection at different background conductivities without the need of adjusting the measurement frequency [328]. 

A magnetic cell separator was constructed on a Si wafer to separate cells that were labeled with paramagnetic beads (FeO nanocrystals 50 nm) from unlabeled ones. The magnetic force was generated from thin magnetized wires (10 pm wide, 0.2 pm thick) formed by depositing a cobalt-chrome-tantalum alloy in pre-etched 0.2-pm-deep trenches. These wires were parallel and were oriented at 45° to the hydrodynamic flow direction of cells [278]. 

As noted earlier, a potential advantage of the TEOS process may be improved step coverage. To illustrate this phenomena, BPSG was deposited in a small, deep trench by both the TEOS and the SiH4 processes. The resulting SEMs are shown in Figure 11. 

Figure 6. Low-resolution STM survey image of a partly oxidized graphite flake. The asymmetric V-shape of the deep trenches is a tip artefact. Conditions Burleigh AR1S 6000, air, W tip, constant current mode, gap voltage 200 mV.

One way to observe and quantify the type of growth is to deposit material into a deep trench cut into the substrate. In the PVD process the total deposit in the trench is proportional to the area of the top opening because it is flux-limited, and when the trench is deep and narrow, the film will be thin. In contrast, the deposit in a CVD process is proportional to the substrate surface area, so that the film in the trench is the same thickness as on the top surface. These two situations are illustrated in Fig. 2.7. 

There are several possible applications that have been considered (i) polysUicon CMP for deep trench capacitor... 

RE etch back or CMP may be used to remove the polysilicon overburden. When RE etch back is used, however, a center seam is etched into the trench. In addition, the RE etch is not self-arresting, and therefore leads to a step at the oxide-polysilicon edge. These defects reduce planarity and make it difficult to reliably cover the trench with the strap film. Center seam and edge step defects in deep trench formation are analogous to the same defects that form when RE etch back is used to remove the... 

Seno T. and Yamanaka Y. (1996) Double seismic zones, compressional deep trench-outer rise events, and superplumes. In Subduction Top to Bottom, AGU Geophysics Monograph 96 (eds. E. Bebout, D. W. Schol, S. H. Kirby, and J. P. Blatt). AGU, pp. 347-355. 

The sample was prepared by the following procedure. 700nm deep trenches with various size were created on 8 inch silicon wafer. 1400nm of Si02 film is... 

All concrete pits, vessels and deep trenches should be checked for water tightness. This is done by (1) plugging all outlets, (2) filling to the top with water, and allowing to stand, covered, for no less than 48 hours. (3) After at least 48 hours, add water to replace any loss by evaporation or soaking into... 

Figure 2.6, Step coverage of CVD-W in deep trenches. SiH WF6 chemistry (top) and H WF6 chemistry (bottom), both at 413°C and 820 mTorr. Depth Is about 10 /im.

Figure 2.17. Concentration profiles at 4, 7 and 10 minutes twgsten growth in 10 pm deep trenches- SiH /UF chemistry. [From reference 43, reprinted with permission] -...

Storage capacitor deep trench I Word line 2 Word line 3... 

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