Defect, reducing

Nicotine metabolism defect reduces smoking. Nature 1998 393 750. 

Electronic defects reduce the photosensitivity, suppress doping and impair the device performance of a-Si H. Their high density in pure amorphous silicon makes this material of lesser interest and is the reason for the attention on the hydrogenated material, in which the defect density is greatly reduced. The remaining defects in a-Si H control many electronic properties and are centrally involved in the substitutional doping process. The phenomena of metastability, which are described in Chapter 6, are caused by the defect reactions. 

RE etch back or CMP may be used to remove the polysilicon overburden. When RE etch back is used, however, a center seam is etched into the trench. In addition, the RE etch is not self-arresting, and therefore leads to a step at the oxide-polysilicon edge. These defects reduce planarity and make it difficult to reliably cover the trench with the strap film. Center seam and edge step defects in deep trench formation are analogous to the same defects that form when RE etch back is used to remove the... 

Pianezza ML, Sellers EM, Tyndale RE Nicotine metabolism defect reduces smoking. Nature 1998 393 750. 

Suboptimal erythropoiesis can be classified by changes in the size of RBCs noted on examination of the peripheral blood. Because the excretory and endocrine functions of the kidney usually mirror each other, renal dysfunction can lead to anemia by reduction in EPO production, resulting in a normochromic, normocytic pattern. Other causes of insufficient erythropoiesis include replacement of bone marrow by fibrosis, solid tumors, or leukemia, as well as defects in erythroid maturation. Relative deficiencies in the cofactors required for heme-RBC synthesis such as iron, folate, and vitamin B may also be important contributors. Structurally, RBC macrocytosis denotes defects in the maturation of the nucleus, whereas microcytosis is indicative of cytoplasmic defects (reduced hemoglobin synthesis). (A detailed description regarding the pathogenesis and treatment of anemic disorders is found in Chap. 99.)... 

Point and electronic defects reduce the free energy of a system by increasing its entropy. The concentration of defects increases exponentially with temperature and is a function of their free energy of formation. 

Usually the defects reduce the lifetime of non-equilibrium carriers and, consequently, their diffusion length in semiconductors. However, because of the presence of the closely spaced AlGaAs barriers, the carrier capture by the QDs in our samples is not diffusion-limited. That is why a difference in the quenching factor of the PL intensity at a given irradiation dose for the above- and below-bandgap excitation for all energies above the m = 2 QD excited state (Fig. lb) is not observed. Thus, the loss of carriers occurs mainly in the dots due to tunneling of caniers from the dots to adjacent non-radiative recombination centers. 

The presence of a small number of Frenkel defects reduces the Gibbs energy of a crystal and so Frenkel defects are intrinsic defects. The formula for the equilibrium concentration of Frenkel defects in a crystal is similar to that for Schottky defects. There is one small difference compared with the Schottky defect equations the number of interstitial positions that are available to a displaced ion, N, need not be the same as the number of normally occupied positions, N, from which the ion moves. The number of Frenkel defects, np. present in a crystal of formula MX at equilibrium is given by ... 

Other prominent applications of these materials include devices such as QD-LEDs, " ° IR photodetectors, active elements in devices such as sensors, lasers etc. With an understanding of the processes controlling the final properties of these materials, we can now control defects, reduce blinking and alter the surface properties to the required hydrophobic behaviour while retaining the interesting properties necessary for any particular application. 

It is known that defects reduce the strength of brittle materials due to stress concentrations, which cannot relax by plastic deformation, as in metals. However, there is also evidence that the flaw population has a similarly strong impact on the hardness. The most promising way to develop new tool materials with improved hardness, wear resistance, and reliability is to reduce the grain size in the sintered microstructures an approach which requires the use of increasingly fine-grained raw materials, be it within the framework of advanced powder technologies or of sol/gel or precursor approaches. 

Features High performance silicone-free produces smoother films with fewer defects reduces craters, tisheyes, orange peel, pin holes Properties Pourable dear liq. dens. 1.02 g/cm vise. 20 Pa-s-100% act. Use Levei 0.2-2.0% (on total resin solids)... 

Theoretical treatments of the tensile strength of a pure liquid take into consideration the intermolecular attractive forces which cause its cohesion. In water, the theoretical strength is nearly 10 bars. o it js therefore expected that the stress required to produce cavitation should be of a similar order of magnitude. The fact that water (without protracted purification) is able to cavitate under acoustic pressures of ca. 1 bar ( 10 Pa) suggests that inhomogeneities in the bulk act as "structural defects" reducing the tensile strength. In this sense, the minimum acoustic pressure required to induce cavitation corresponds to a threshold, i.e., the cavitation threshold. 

Class 3 defects (minor defects) These defects reduce the quality of the product. For example a small shift of the print on the product. A defect in this class either has no effect or hardly influences the usefulness of the product. 

This kind of defect reduces the total anisotropy and limits the level of the axial properties. 

PO contain thermolabile chemical defects (peroxide, unsaturation, branch points, etc.) that are weaker than those of the main chain. The thermal stability increases in the order PIB < branched PE < PP < linear PE. The defects reduce the decomposition temperature below 400°C, the value for pure polymethylene [161]. 

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