Dielectric thinning

In quadrupole-based SIMS instruments, mass separation is achieved by passing the secondary ions down a path surrounded by four rods excited with various AC and DC voltages. Different sets of AC and DC conditions are used to direct the flight path of the selected secondary ions into the detector. The primary advantage of this kind of spectrometer is the high speed at which they can switch from peak to peak and their ability to perform analysis of dielectric thin films and bulk insulators. The ability of the quadrupole to switch rapidly between mass peaks enables acquisition of depth profiles with more data points per depth, which improves depth resolution. Additionally, most quadrupole-based SIMS instruments are equipped with enhanced vacuum systems, reducing the detrimental contribution of residual atmospheric species to the mass spectrum. 

Our research using the CCS approach has focused on the discovery of new dielectric thin films. This example illustrates the power of this approach and key considerations in utilizing high throughput synthesis and screening approaches. A variety of other problems appear well matched to such combinatorial-style methods. A few of these are discussed briefly below, touching on both experimental challenges and research opportunities. 

Equation (6) defines most of the intrinsic characteristics of the DEA process. For further information on the mechanism of transient anion formation and its effects in isolated electron-atom and electron-molecule systems, the reader is referred to the review articles by Schulz [17] and others [7,19,20]. Information on resonance scattering from single layer and submonolayer of molecules physisorbed or chemisorbed on conductive surfaces can be found in the review by Palmer et al. [21-23]. The present article provides information essentially on resonances in atoms and molecules condensed onto a dielectric surface or forming a dielectric thin film. 

For bulk dielectrics, a dielectric resonator can be formed by a cylindrically shaped piece of dielectric material. Dielectric thin films are more difficult to investigate, in particular when the loss tangent is very small. Planar resonator techniques as well as specially designed dielectric resonators can be used to examine their properties. For high-temperature superconductors both dielectric resonators and planar resonators represent an ideal tool to examine their surface impedance values. 

A multicolour focal plane array is presented in US-A-4956555. A first and a second group of filters each includes a dielectric/thin metal/dielectric layer combination. The filters of the two groups differ in that the thickness of the dielectric layers are adjusted to selected wavelength bands. 

ALE was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display devices. As an illustration of the ALE process, figure 13.11 summarizes the basic sequences of ALE in two alternative ways for producing ZnS. 

Tseng W-T, Liu C-W, Dai B-T, Yeh C-F. Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films. Thin Solid Films 1996 290-291 458-463. 

Majumdar, A., Microscale Heat Conduction in Dielectric Thin Films. ASME Journal of Heat Transfer, 1993. 115 p. 7-16. 

Cahill, D.G., Heat Transport in Dielectric Thin Films and at Solid-Solid Interfaces in Microscale Energy Transport. Series in Chemical and Mechanical Engineering, ed. C.L. Tien, A. Majumdar, and F.M. Gemer. 1998, Washington, DC Taylor Erancis. 

Chang, H. Gao, C. Takeuchi, I. Yoo, Y. Wang, J. Schultz, P. G. Xiang, X.-D. Sharma, R. P. Downes, M. Venkatesan, T., Combinatorial synthesis and high throughput evaluation of fer-roelectric/dielectric thin-film libraries for microwave applications, Appl. Phys. Lett. 1998, 72, 2185-2187... 

A whole variety of technologies exist for passive and integrated circuit (IC) capacitor fabrication. There is however one common denominator for all these different technologies they all make use of deliberately chosen valve metal, Si and ceramic oxides as the dielectric thin films, which therefore play a key role in electronics. The reasons for this and the underlying research issues were discussed in this chapter. 

Wang, Z. Wang, H. Mitra, A. Huang, L. Yan, Y. Pure-silica zeolite low-k dielectric thin films by spin-on process. Stud. Surf. Sci. Cata. 2001, 135, 3217-3224. 

FIGURE 3.25. Spectral reflectance in colored and bleached states for an asymmetric electrochromic device with hydrated dielectric thin-flim ion conductors the design is sketched in the inset [3.94]. 

Ma, H., Sheng, P., Wong. G.K.L. Third-order nonlinear properties of Au clusters containing dielectric thin films. Topics Appl. Phys. 82, 41-62 (2002)... 

Macleod, H.A. (1978). A new approach in the design of metal-dielectric thin-film optical coatings. Optica Acta. Vol. 25, No. 2, pp. 93—106. 

Figure 2). Orientation of the films is used to tailor and control the CTE, and the low dielectric thin film layers provide more controlled impedance and reduced crosstalk than other substrate materials. In addition to MLBs, ordered polymer films can be used to advantage in multichip molecules where silicon chips are directly bonded to the interconnect substrate. The very low permeability of PBO and PBZT films will protect the chips from moisture. Flexible circuitry is another promising application area for these films. 

This chapter discusses the preparation of tantalum oxide thin films using the sol-gel method, which we believe is promising as a practical method for producing dielectric thin films whose dielectric constants and breakdown voltages are both comparatively high. Tantalum oxide films are good candidates for insulators in LSI devices, EL devices, and film capacitors [4]. Reports on the for-... 

P-ll Pu re-silica zeolite low-k dielectric thin films by spin-on process... 

The in situ plasma cleaning procedure performed after CVD of dielectric thin films is one of the major emitters of PFCs in semiconductor manufacturing it can represent 50-70% of the total PFC emission in a semiconductor fabrication plant. To clean the process chambers of deposited by-products, conventional cleaning methods use CF4 or C2F6 gases activated by RF CCP (usually 13.56 MHz) inside the process chamber. These PFC gases achieve a relatively low degree of dissociation and unreacted molecules are enutted in the process... 

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