Microwave plasma assisted chemical vapor deposition

A large class of coordination compounds, metal chelates, is represented in relation to microwave treatment by a relatively small number of reported data, mainly p-diketonates. Thus, volatile copper) II) acetylacetonate was used for the preparation of copper thin films in Ar — H2 atmosphere at ambient temperature by microwave plasma-enhanced chemical vapor deposition (CVD) [735a]. The formed pure copper films with a resistance of 2 3 pS2 cm were deposited on Si substrates. It is noted that oxygen atoms were never detected in the deposited material since Cu — O intramolecular bonds are totally broken by microwave plasma-assisted decomposition of the copper complex. Another acetylacetonate, Zr(acac)4, was prepared from its hydrate Zr(acac)4 10H2O by microwave dehydration of the latter [726]. It is shown [704] that microwave treatment is an effective dehydration technique for various compounds and materials. Use of microwave irradiation in the synthesis of some transition metal phthalocyanines is reported in Sec. 5.1.1. Their relatives - porphyrins - were also obtained in this way [735b]. 

S. A. Stuart, and S. Prawer, TEM and CBED observation of defects in isolated diamond crystals synthesized by microwave plasma chemical vapor deposition on tungsten wire tips, J. Computer-Assisted Microscopy, 4(2) 201-204 (1992)... 

H. Shiomi, K. Tanabe, Y. Nishibayashi, and N. Fujimori, Epitaxial growth of high quality diamond film by the microwave plasma-assisted chemical-vapor-deposition method, Jpn. J. Appl Pl s., 29(l) 34-40 (1990)... 

P. S. Weiser, S. Prawer, A. Hoffman, R. R. Manory, P. J. K. Paterson, and S. A. Stuart, Carbon diffusion in uncoated and titanium nitride coated iron substrates during microwave plasma assisted chemical vapor deposition of diamond, J. Appl Phys., 72(10) 4643-4647 (1992)... 

X. Jiang and C.-P. Klages, Synthesis of diamond/p-SiC composite films by microwave plasma assisted chemical vapor deposition, Appl. Phys. Lett., 61, 1629-31 (1992). 

Microwave Plasma Assisted Chemical Vapor Deposition (PACVD) [49,50],... 

Diamond has also been deposited onto carbon fiber [10,11]. Shah and Waite deposited 1-30 pm films of diamond on PAN and pitch carbon fibers with diameter as small as 5 pm by microwave H-plasma assisted chemical vapor deposition. An ultrasonic pretreatment of the fibers in a bath containing methanol and diamond paste was required for successful coating of the fibers. 

Figure 1.3 Schematic diagram of microwave-plasma-assisted chemical vapor deposition (MPACVD) diamond growth system. (From Ref. 11.)...

Chemical vapor deposition refers to the formation of a nonvolatile solid material from the reaction of chemical reactants, called precursors, being in vapor phase in the right constituents. A reaction chamber is used for this process, into which the reactant gases are introduced to decompose and react with the substrate to form thin film or powders There are several main classification schemes for chemical vapor deposition processes. These include classification by the pressure (atmospheric, low-pressure, or ultrahigh vacuum), characteristics of the vapor (aerosol or direct liquid injection), or plasma processing type (microwave plasma-assisted deposition, plasma-enhanced deposition, remote plasma-enhanced deposition)... 

AC Greenham, BA Nichols, RM Wood, KL Lewis. Optical interference filters with continuous refractive index modulations by microwave plasma-assisted chemical vapor deposition. Opt Eng 32 1018-1024, 1993. 

In the 1950s to 1980s, two main techniques were developed for the synthesis of artificial diamond (a) high-pressure/high-temperature synthesis that yielded artificial diamond gems [18], and (b) chemical vapor deposition (CVD) [19] that made possible the synthesis of diamond in thin-film form on various substrates. Different CVD techniques have been adopted in the synthesis of diamond thin films. Three main CVD techniques include hot-filament CVD [20], plasma-assisted CVD [21], and combustion CVD [22]. There are many types of plasma-assisted CVD techniques according to the energy sources, such as the microwave plasma-assisted CVD (also... 

The details of the growth of the boron-doped polycrystalline diamond thin films using a high pressure microwave plasma-assisted chemical vapor deposition system (ASTeX) have been... 

A schematic diagram of the procedure for fabricating the BDD-MDA electrode is shown in Fig. 11.1. A Si(lOO) surface was masked with patterned photoresist and etched with a mixture of HF, HNO3 and H2O. The structured silicon surface was seeded with 10-nm diamond powder. BDD was deposited using a microwave plasma-assisted chemical vapor deposition system. The details of the diamond deposition have been reported elsewhere [7]. After the deposition of diamond, polyimide varnish was spin-coated on the diamond surface. The polyimide layer was... 

Polycrystalline BDD electrodes were deposited onto Si substrates using a microwave plasma-assisted chemical vapor deposition system. The detailed procedures for the preparation have been described elsewhere [7]. After the diamond was deposited, it was sputtered using a GDOES instrument at an Ar pressure of 0.51 Torr by applying an rf power of 40 W at 13.56 MHz. The values of the gas pressure and the applied power relate to the plasma per se. The surface of the diamond became mirror-like in... 

The present chapter aims at summarizing some of the main voltammetric applications of boron-doped diamond (BDD) films, deposited on Si(lOO) wafers by means of microwave plasma-assisted chemical vapor deposition [9]. In order to put these results into better perspective, the advantages of using BDD for anodic voltammetry are correlated with the unique properties of this electrode material. In addition, analytical applications of anodic voltammetry at conductive diamond electrodes are also discussed. 

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