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Expanding thermal plasma chemical vapor deposition

Expanding Thermal Plasma Chemical Vapor Deposition [Pg.163]

The expanding thermal plasma chemical vapor deposition (ETP CVD) technique has been developed in the group of Schram [20, 556] and has been used for the [Pg.163]

An argon-hydrogen plasma is created in a dc thermal arc (cascaded arc) operated at high pressure 0.5 bar) [556, 559. 560] (the cascaded arc is also employed in IR ellipsometry, providing a well-defined source of intense IR radiation see Section 1.5.4 [343]). As the deposition chamber is at much lower pressure (0.1-0.3 mbar), a plasma jet is created, expanding into the deposition chamber. Near the plasma source silane is injected, and the active plasma species dissociate the silane into radicals and ions. These species can deposit on the substrate, which is positioned further downstream. [Pg.164]

The main advantage of this technique is the very high deposition rate that can be obtained for the different materials. However, this high deposition rate may not always be compatible with good material quality. A large effort has been made and has resulted in the deposition of good-quality a-Si H at deposition rates as high as 10 nm/s [432, 561, 562]. [Pg.164]

The deposition chamber is a cylindrical vessel with a diameter of 50 cm and a length of 80 cm. At about 5 cm from the arc outlet, silane can be introduced via an injection ring (7.5-cm diameter) that contains eight holes of 1-mm diameter each. The distance between arc outlet and substrate is 38 cm. The substrates are heated via the substrate holder, of which the temperature can be controlled between 100 and 500°C. Samples can be loaded via a load lock equipped with a magnetic transfer arm. The substrate can be optionally RF-biased. A residual gas analyzer [Pg.164]


Expanding Thermal Plasma Chemical Vapor Deposition. 163... [Pg.1]

A promising alternative is surface textured doped zinc oxide films. ZnO films can offer excellent transparency and are highly resistant to hydrogen plasmas [78]. Textured ZnO films have been prepared by several deposition techniques. Examples are boron doped zinc oxide (ZnO B) prepared by low-pressure chemical vapor deposition (LPCVD) ([79,80], see also Chap. 6) or ZnO films deposited by expanding thermal plasma CVD [81], Quite recently, ZnO films for back contacts of solar modules have been developed using chemical bath deposition [82]. [Pg.376]


See other pages where Expanding thermal plasma chemical vapor deposition is mentioned: [Pg.169]    [Pg.133]   
See also in sourсe #XX -- [ Pg.2 , Pg.163 , Pg.164 , Pg.165 , Pg.166 , Pg.167 , Pg.168 ]




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